SGS Thomson Microelectronics BYT200PIV-400 Datasheet
ULTRAFAST POWER RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
BYT200PIV-400
I
F(AV)
V
RRM
2 x100 A
400 V
VF(max) 1.4 V
FEATURES AND BENEFITS
n LOW CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n HIGH AVALANCHE CAPABILITY
n ISOLATED PACKAGE :
2500 V
DC
CAPACITANCE 42pF
DESCRIPTION
High current power rectifier diode suited for
Switched Mode Power Supply and high frequency
DC to DC converters.
Packaged in ISOTO P, this devic e is intended
for use in a medi um v olt age hig h c ur rent applications such as welding equipment and
Telecom supplies.
ABSOLUTE MAXIMUM RATING
A1 K1
A2 K2
4
ISOTOP
1=A1
2
3
TM
2=K1
3=A2
4=K2
1
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 400 V
RMS forward current 150 A
Average forward current Tc = 80°C
100 A
δ = 0.5
I
FSM
Surge non repetitive forward current tp = 10 ms
600 A
Sinusoidal
I
FRM
T
stg
Repetitive peak forward current tp 10 µs 800 A
Storage temperature range - 40 to + 150 °C
Tj Maximum junction temperature 150 °C
ISOTOP is atrademark of STMicroelectronics
May 2000 - Ed: 3C
1/5
BYT200PIV-400
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
IR* Reverse leakage current Tj = 25°CV
VF** Forward voltage drop Tj = 25°CI
Pulse test : * tp = 5 ms, duty cycle < 2 %
RECOVERY CHARACTERISTICS
Junction to case Per leg 0.55 °C/W
Total 0.33
Coupling 0.1
R=VRRM
120 µA
Tj = 100°C 4 12 mA
= 100 A 1.6 V
F
Tj = 125°CI
** tp = 380 µs, duty cycle < 2%
= 100 A 0.95 1.4
F
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time IF=0.5A IR=1A Irr=0.25A
IF=1A dI/dt= -50A/µs
55
100
Vr=30V
I
RM
Reverserecoverycurrent dIF/dt=-200A/µs Tj=125°C
40 A
VR=400V IF=100A
S factor Softness factor dIF/dt=-200A/µs Tj=125°C
0.25
VR=400V IF=100A
t
fr
Forward recovery time IF=100A dIF/dt=500A/µs
500 ns
Measured at 1.1 x VFmax.
V
FP
Peak forward voltage 12 V
Tj=25°C
To evaluate the conduction losses use the following equation :
P = 0.8 x I
+ 0.00228 x I
F(AV)
F2(RMS)
ns
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