SGS Thomson Microelectronics BYT16P-400 Datasheet
®
BYT16P-400
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
(max) 1.4 V
V
F
16 A
400 V
trr (max) 35 ns
FEATURES AND BENEFITS
VERY LOW REVERS E RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
DESCRIPTION
This double rectifier is suited for Switch Mode
Power Supplies and other power converters.
This device is intended to free-wheeling function in
converters and motor control circuits.
ABSOLUTE RATINGS (limiting values, per diode)
K
A1
A2
TO-220AB
(Plastic)
K
A2
K
A1
Symbol Parameter Value Unit
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
Repetitive peak forward current tp=5 µs F=1kHz
RMS forward current
Average forward current Tc = 100°C
400 V
300 A
30 A
16 A
δ = 0.5
I
FSM
T
stg
Tj
October 1999 - Ed: 2A
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
100 A
- 40 to + 150 °C
150 °C
1/5
BYT16P-400
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode) x R
∆
Junction to case Per diode
(Per diode) + P(diode 2) x R
th(j-c)
Total
Coupling
th(c)
3.75
2
0.25
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Uni t
*
V
F
**
I
R
Forward voltage drop Tj = 25°CI
Reverse leakage
current
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
= 8 A
F
Tj = 100°C
Tj = 25°CV
= V
R
RRM
Tj = 100°C
1.5 V
1.4
15 µA
2.5 mA
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.024 I
F2(RMS)
RECOVERY CHARAC TERISTICS
°C/W
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs
= 0.5A IR = 1A Irr = 0.25A
I
F
75 ns
35
TURN-OFF SWITCHING CHARAC TERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
C =
IRM
I
RM
V
V
Maxim um reve rse
recovery time
Maxim um reve rse
recovery current
Turn-off overvo ltage
RP
coefficient
CC
dIF/dt = - 32 A/µ sV
dI
/dt = - 64 A/µ s
F
dIF/dt = - 32 A/µ s
/dt = - 64 A/µ s
dI
F
Tj = 100°C
dIF/dt = - 8A/µs Lp = 9µH
(see fig. 12)
Fig. 1: Low frequency power losses versus
= 200 V
CC
I
= 8 A
F
L
≤ 0.05 µH
p
Tj = 100°C
(see fig. 11)
= 120V IF = I
VCC
F(AV)
Fig. 2: Peak current ve r su s f o rm f a ct or.
75 ns
50
2.2 A
2.8
3.3 /
average current.
2/5
Loading...