SGS Thomson Microelectronics BYT13-800, BYT13-600, BYT13-1000 Datasheet
®
SOFT RECOVERY
VERY HIGH VOLTAGE
SMALL RECOVERY CHARGE
BYT 13-600 →1000
FAST RECOVERY RECTIFIER DIODES
APPLICATIONS
ANTISATURATION DIODES FOR TRANSIS-
DO-201AD
(Plastic)
TOR BASE D RIVE
SNUBBER DIODES
ABSOLUTE MAXIMU M RATINGS
Symbol Parameter Value Unit
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
T
L
Symbol Parameter
V
RRM
Repetive Peak Forward Current
Average Forward Current * T
Surge non Repetitive Forward Current tp = 10ms
Power Dissipation *
Storage and Junction Temperature Range - 40 to + 150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
Repetitive Peak Reverse Voltage 600 800 1000 V
(limiting values)
≤ 20µs
t
p
55°C
a =
= 0.5
δ
Sinusoidal
55°C
T
a =
50 A
3A
100 A
3.75 W
- 40 to + 150
230
BYT 13-
600 800 1000
C
°
C
°
Unit
THERMAL RESIST ANCE
Symbol Parameter Value Unit
R
th (j - a)
* On infinite heatsink with 10mm lead length.
August 1998 Ed : 1B
Junction-ambient* 25
C/W
°
1/4
BYT13-600 → 1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj = 25°C
Tj = 25°C
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
= V
R
RRM
I
= 3A 1.3 V
F
20
A
µ
t
rr
Tj = 25°C IF = 0.5A IR = 1A Irr = 0.25A
To eva luate the conduction losses use the following equations:
V
= 0.95 + 0.050 IF P = 0.95 x I
F
Figure 1. Maximum average power
dissipation versus average forward current.
F(AV)
+ 0.050 I
Figure 2. Average forward current versus
ambient temperature.
F2(RMS)
150 ns
Figure 3. Thermal resistance versus lead
length.
2/4
Mounting n°1
INFINITE HEATSINK
Mounting n°2
PRINTED CIRCUIT
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