SGS Thomson Microelectronics BYT08P-400, BYT08PI-400 Datasheet

BYT08P-400
®
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
(max) 1.4 V
V
F
trr (max) 35 ns
FEATURES AND BENE FITS
VERY LOW RE VE RS E RE COV ER Y T IME VERY LOW SWITCHING LOSSE S LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: TO-220AC
Insulation voltage: 2500 V
RMS
Capacitance = 7 pF
DESCRIPTION
8 A
400 V
T0-220AC
(Plastic)
BYT08PI-400
A
K
Insulated
TO-220AC
(Plastic)
A
K
This single rectifier is suited for Switch Mode Power Supplies and other power converters.
This device is intended to free-wheeling function in converters and motor control circuits.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage Repetitive peak forward current tp=5 µ s F=5kHz RMS forward current Average forward current TO-220AC Tc = 120°C
400 V 200 A
16 A
8A
δ = 0.5
Insulated
Tc = 105°C
TO-220AC
I
FSM
T
Tj
stg
Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature
100 A
- 40 to + 150 °C 150 °C
October 1999 - Ed: 3A
1/7
BYT08P-400 / BYT08PI-400
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC
Ins. TO-220AC
2.5
3.5
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
*
F
I
**
R
Forward voltage drop Tj = 25°CI
Reverse leakage current
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
= 8 A
F
Tj = 100°C Tj = 25°CV
= V
R
RRM
Tj = 100°C
1.5 V
1.4 15 µA
2.5 mA
To evaluate the conduction losses use the following equation: P = 1.1 x I
F(AV)
+ 0.024 I
F2(RMS)
°C/W
RECOVERY CHARAC TERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs
= 0.5A IR = 1A Irr = 0.25A
I
F
75 ns 35
TURN-OFF SWITCHING CHARAC TERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
75 ns
50
2.2 A
2.8
3.3 /
C =
t
IRM
I
RM
Maxim um reve rse recovery time
Maxim um reve rse recovery current
V V
Turn-off overvo ltage
RP
coefficient
CC
dIF/dt = - 32 A/µ sV dI
/dt = - 64 A/µ s
F
dIF/dt = - 32 A/µ s
/dt = - 64 A/µ s
dI
F
Tj = 100°C
VCC
= 60V IF = I
= 200 V
CC
I
= 8 A
F
L
0.05 µH
p
Tj = 100°C (see fig. 13)
F(AV)
dIF/dt = - 30A/µs Lp = 1µH
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BYT08P-400 / BYT08PI-400
Fig. 1: Average forward power dissipation versus
average forward current .
PF(av)(W)
14 12 10
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
8 6
δ
=tp/T
T
tp
4 2 0
012345678910
IF(av) (A)
Fig. 3: Average forward current versus ambient temperature (δ=0.5).
IF(av)(A)
10
9 8 7 6 5 4 3 2 1
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
T
tp
Fig. 2: Peak current ve r su s f o rm f a ct or.
IM(A)
100
90
P=5W
80 70 60 50
Rth(j-a)=15°C/W
Tamb(°C)
40 30 20 10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Insulated
P=10W
Non insulated
T
δ
=tp/T
tp
P=20W
δ
Fig. 4-1: Non repetitive surge peak forward current versus overload duration (TO-220AC).
IM(A)
100
90 80 70 60 50 40 30
I
M
20 10
0 1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
Tc=25°C
Tc=50°C
Tc=75°C
t(s)
Fig. 4-2: Non repetitive surge peak forward current versus overload duration (insulated TO-220AC).
IM(A)
90 80 70 60 50 40 30
I
M
20 10
0 1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
Tc=50°C
Tc=25°C
Tc=75°C
t(s)
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BYT08P-400 / BYT08PI-400
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
0.5
δ = 0.2
δ = 0.1
0.2
Single pulse
tp(s)
0.1 1E-3 1E-2 1E-1 1E+0
δ
=tp/T
T
tp
Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF)
30 28 26 24 22 20 18 16 14 12 10
1 10 100 200
VR(V)
F=1MHz
Tj=25°C
Fig. 6: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
100.0
Typical values
Tj=100°C
10.0
Tj=25°C
1.0
Tj=100°C
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 8: Recovery charges versus dI
Qrr(nC)
250
200
150
100
50
IF=IF(av)
90% confidence
Tj=100°C
0
10 20 50 100 200
VFM(V)
dIF/dt(A/µs)
/dt (per diode).
F
Fig. 9: Recovery current versus dI
/dt (per diode).
F
IRM(A)
10
IF=IF(av)
90% confidence
Tj=100°C
8
6
4
2
dIF/dt(A/µs)
0
10 20 50 100 200
4/7
Fig. 10: Transient peak forward voltage versus dI
/dt (per diode)
F
VFP(V)
30
IF=IF(av)
90% confidence
Tj=100°C
25 20 15 10
5 0
0 100 200 300 400 500
dIF/dt(A/µs)
BYT08P-400 / BYT08PI-400
Fig. 11: Forward recovery time versus dI
diode)
tfr(µs)
1.50
1.25
1.00
90% confidence
/dt (per
F
IF=IF(av) Tj=100°C
Fig. 12: Dynamic parameters versus junction temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0 100 200 300 400 500
dIF/dt(A/µs)
0.75
0.50
0.25 0 25 50 75 100 125 150
Fig. 13: Turn-off switching characteristics (without series inductance).
IRM
Qrr
Tj(°C)
Fig. 14: Turn-off switching characteristics (with series inductance).
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BYT08P-400 / BYT08PI-400
PACKAGE MECHANICAL DATA
TO-220AC
REF.
DIMENSIONS
Millimeters Inches
L2
H2
L5
Ø I
L6
A
C
A 4.40 4.60 0.173 0.181
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
F1
L4
F
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259
G
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
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PACKAGE MECHANICAL DAT A
TO-220AC Insulated
B
I
L
F
A
a1
l2
a2
b1
e
BYT08P-400 / BYT08PI-400
C
b2
REF.
Millimeters Inches
Min. Max. Min. Max.
A 14.23 15.87 0. 560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579
B 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038 b2 1.15 1.39 0.045 0.055
C 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106
e 4.58 5.58 0.180 0.220 F 5.85 6.85 0.230 0.270
I 3.55 4.00 0.140 0.157
L 2.54 3.00 0.100 0.118
c1
c2
l2 1.45 1.75 0.057 0.069
DIMENSIONS
Ordering type Marking Package Weight Base qty Delivery mode
BYT08P-400 BYT08P-400 TO-220AC 1.86 g. 50 Tube
BYT08PI-400 BYT08PI-400 Insulated
1.86 g. 50 Tube
TO-220AC
Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0
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