SGS Thomson Microelectronics BYT08P-400, BYT08PI-400 Datasheet
BYT08P-400
®
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
(max) 1.4 V
V
F
trr (max) 35 ns
FEATURES AND BENE FITS
VERY LOW RE VE RS E RE COV ER Y T IME
VERY LOW SWITCHING LOSSE S
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: TO-220AC
Insulation voltage: 2500 V
RMS
Capacitance = 7 pF
DESCRIPTION
8 A
400 V
T0-220AC
(Plastic)
BYT08PI-400
A
K
Insulated
TO-220AC
(Plastic)
A
K
This single rectifier is suited for Switch Mode
Power Supplies and other power converters.
This device is intended to free-wheeling function in
converters and motor control circuits.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
Repetitive peak forward current tp=5 µ s F=5kHz
RMS forward current
Average forward current TO-220AC Tc = 120°C
400 V
200 A
16 A
8A
δ = 0.5
Insulated
Tc = 105°C
TO-220AC
I
FSM
T
Tj
stg
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
100 A
- 40 to + 150 °C
150 °C
October 1999 - Ed: 3A
1/7
BYT08P-400 / BYT08PI-400
THERMA L RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case TO-220AC
Ins. TO-220AC
2.5
3.5
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
*
F
I
**
R
Forward voltage drop Tj = 25°CI
Reverse leakage
current
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
= 8 A
F
Tj = 100°C
Tj = 25°CV
= V
R
RRM
Tj = 100°C
1.5 V
1.4
15 µA
2.5 mA
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.024 I
F2(RMS)
°C/W
RECOVERY CHARAC TERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs
= 0.5A IR = 1A Irr = 0.25A
I
F
75 ns
35
TURN-OFF SWITCHING CHARAC TERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
75 ns
50
2.2 A
2.8
3.3 /
C =
t
IRM
I
RM
Maxim um reve rse
recovery time
Maxim um reve rse
recovery current
V
V
Turn-off overvo ltage
RP
coefficient
CC
dIF/dt = - 32 A/µ sV
dI
/dt = - 64 A/µ s
F
dIF/dt = - 32 A/µ s
/dt = - 64 A/µ s
dI
F
Tj = 100°C
VCC
= 60V IF = I
= 200 V
CC
I
= 8 A
F
L
≤ 0.05 µH
p
Tj = 100°C
(see fig. 13)
F(AV)
dIF/dt = - 30A/µs Lp = 1µH
2/7
BYT08P-400 / BYT08PI-400
Fig. 1: Average forward power dissipation versus
average forward current .
PF(av)(W)
14
12
10
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
8
6
δ
=tp/T
T
tp
4
2
0
012345678910
IF(av) (A)
Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
10
9
8
7
6
5
4
3
2
1
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
T
tp
Fig. 2: Peak current ve r su s f o rm f a ct or.
IM(A)
100
90
P=5W
80
70
60
50
Rth(j-a)=15°C/W
Tamb(°C)
40
30
20
10
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Insulated
P=10W
Non insulated
T
δ
=tp/T
tp
P=20W
δ
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (TO-220AC).
IM(A)
100
90
80
70
60
50
40
30
I
M
20
10
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
Tc=25°C
Tc=50°C
Tc=75°C
t(s)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (insulated TO-220AC).
IM(A)
90
80
70
60
50
40
30
I
M
20
10
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
Tc=50°C
Tc=25°C
Tc=75°C
t(s)
3/7
Loading...