SGS Thomson Microelectronics BYT08P-1000 Datasheet
®
FAST RECOVERY RECTIFIER DIODE
VERY HIGH REVERSE VOLTAGE CAPABILITY
VERY LOW REVERSES RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE T URN- OF F SWITCHING
BYT 08P-1000
Cathode connected to case
A
K
SUITAB L E A PPLICATIONS
FREE WHEELING DIODE IN CONVERTERS
TO220AC
(Plastic)
AND MOTOR CONTROL CIRCUITS
RECTIFIER IN S.M.P.S.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
V
RRM
V
RSM
I
FRM
I
F (RMS)
I
F (AV)
I
FSM
P Power Dissipation
T
stg
T
Repetitive Peak Reverse Voltage 1000 V
Non Repetitive Peak Reverse Voltage 1000 V
Repetitive Peak Forward Current
RMS Forward Current 16 A
Average Forward Current Tc = 115°C
Surge Non Repetitive Forward Current tp = 10ms
Storage and Junction Temperature Range - 40 to + 150
j
(limiting values)
≤ 10µs
t
p
= 0.5
δ
Sinusoidal
= 115°C
T
c
100 A
8A
50 A
17 W
- 40 to + 150
C
°
THERMAL R E SI STANCE
Symbol Parameter Value Unit
R
th (j - c)
October 1999 - Ed: 2A 1/4
Junction-case 2
C/W
°
BYT 08P-1000
ELECTRICAL CHARACTERISTICS
STATIC C HAR ACTERISTICS
Synbol Test Conditions Min. Typ. Max. Unit
V
I
R
V
F
Tj = 25°C
= 100°C
T
j
T
= 25°C
j
= 100°C
T
j
= V
R
RRM
2mA
I
= 8A 1.9
F
1.8
RECO V ERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
I
Tj = 25°CI
= 1A diF/dt = - 15A/µs VR = 30V
F
= 0.5A IR = 1A Irr = 0.25A 65
F
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
35
155
µ
ns
A
V
t
IRM
I
RM
diF/dt = - 32A/µs
/dt = - 64A/µs
di
F
diF/dt = - 32A/µs
/dt = - 64A/µs
di
F
V
= 200 V IF = 8A
CC
L
0.05µH T
≤
p
See Figure 1
= 100°C
j
200 ns
120
5.5 A
6
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol Test Conditions Min. Typ. Max. Unit
V
C =
RP
Tj = 100°C VCC = 200V IF = I
V
diF/dt = - 8A/µs Lp = 12µH See figure 2
CC
F (AV)
4.5
To evaluate the conduction losses use the following equations:
V
= 1.47 + 0.041 IF P = 1.47 x I
F
F(AV)
+ 0.041 I
F2(RMS)
2/4
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