SGS Thomson Microelectronics BYT03-400 Datasheet

®
FAST RECOV ERY REC T IFI ER DIO D E
MAJOR PRODUC TS CHARACTERISTICS
BYT03-400
I
F(AV)
V
RRM
t
rr
(max) 1.4 V
V
F
3 A 400 V 25 ns
FEATURES
VERY LOW REVERS E RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING
DESCR IPTIO N
Free wheeling diode in converters and motor con-
DO-201AD
(Plastic)
trol circuits. Rectifier s in S.M. P.S.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
400 V
V
RSM
I
FRM
I
F (AV)
I
FSM
Non repetitive peak reverse voltage 400 V Repetive peak forward current tp 10µs60A Average forward current* T
Surge non repetitive forward current tp = 10ms
P Power dissipation * T
T
stg
T
Storage temperature range - 40 to + 150 °C Maximum operating junction temperature
j
* On infinite heatsink with 10mm lead lengh.
October 1999 - Ed: 3B
a =
δ
= 0.5
65°C
3A
60 A
Sinusoidal
65°C 4.2 W
a =
+ 150
1/5
BYT03-400
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j - a)
Junction-ambient* 20 °C/W
* On infinite heatsink with 10mm lead lengh.
STATIC ELECTRICAL CHARACTE RISTICS
Synbol Test Conditions Min. Typ. Max. Unit
I
R
V
F
Tj = 25C VR = V
= 100C 0.5 mA
T
j
RRM
Tj = 25C IF = 3A 1.5 V
= 100C 1.4
T
j
20
RECOVERY CHARA CTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25C IF = 1A diF/dt = - 15A/µs VR = 30V 55 ns
µ
A
= 0.5A IR = 1 A Irr = 0.25A 25
I
F
TURN-OFF SWITCHING CHARAC TERISTICS
- Without series inductance
Symbol Test Conditions Min. Typ. Max. Unit
t
I
IRM
RM
diF/dt = - 50A/µsV
= 200 V IF = 3A
CC
0.05µH T
L
p
= 100°C
j
diF/dt = -50A/µs 1.52A
35 50 ns
To evaluate the conduction losse use the following equations :
= 1.1 + 0.050 IF P = 1.1 x I
V
F
F(AV)
+ 0.050 I
F2(RMS)
2/5
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