SGS Thomson Microelectronics BUZ80A Datasheet
BUZ80A
N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
BUZ 8 0A 800 V < 3 Ω 3.8 A
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100%AVALANCHETESTED
■ REPETITIVEAVALANCHEDATA AT 100
■ LOW INTRINSICCAPACITANCES
■ GATECHARGE MINIMIZED
■ REDUCEDTHRESHOLD VOLTAGE SPREAD
DS(on)
= 2.5
Ω
o
C
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BUZ80A
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safeoperating area
November 1998
Drain-source Voltage (VGS=0) 800 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Voltage ± 20 V
GS
Drain Current (co ntinuous) a t Tc=25oC3.8A
I
D
I
Drain Current (co ntinuous) a t Tc=100oC2.3A
D
800 V
(•) Drain Current (pulsed) 15 A
Total Dissipation at Tc=25oC100W
tot
Derating Factor 0.8 W/
Insulat ion W ithstan d Voltage (DC) V
ISO
St orage Tem pe r ature -65 to 150
stg
Max. O perating Junc t ion Temperat u r e 150
T
j
o
C
o
C
o
C
1/9
BUZ80A
THERMAL DATA
TO-220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max V alue Uni t
I
AR
E
Ther mal Resist ance Junction- case Max 1.25
Ther mal Resist ance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Tem perature For S oldering Pur p os e
l
Avalanche Cu r rent, Repetitive or No t- Re petitive
(pulse width l imited by T
Single Pu lse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
3.8 A
200 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
800 V
Break d own Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curr ent (V
GS
Gat e- b ody Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRatingx0.8 Tc=100oC
V
DS
=± 20 V
V
GS
250
1000
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
234V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS=10V ID=1.7A
= 10V ID=1.7A Tc=100oC
V
GS
On St ate Drain Cu rr ent VDS>I
D(on)xRDS(on )max
3.8 A
2.5 3
6
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse T ransf er
rss
Capacitance
VDS>I
D(on)xRDS(on )max
ID=1.7A 1 S
VDS=25V f=1MHz VGS= 0 1100
150
35
µ
µA
Ω
Ω
pF
pF
pF
A
2/9
BUZ80A
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
t
r
Rise T ime
VDD=30V ID=2.3A
=50 Ω VGS=10V
R
G
65
15090200
(see t est circuit, fi gure 3)
(di/dt)
Tur n-on Current Slope VDD= 600 V ID=3.8A
on
=50 Ω VGS=10V
R
G
80 110 A/ µ s
(see t est circuit, figure 5)
Q
Q
Q
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 400 V ID=5A VGS=10V 55
8
26
70 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage R ise Time
Fall Time
f
Cross-over Tim e
c
VDD= 600 V ID=3.8A
=50 Ω VGS=10V
R
G
(see t est circuit, fi gure 5)
110
140
150
145
190
200
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
3.8
15
(pulsed)
(∗) For ward On Voltage ISD=4A VGS=0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 4 A d i/ dt = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see t est circuit, fi gure 5)
500
4.3
Charge
Reverse Recovery
17
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
SafeOperating Area ThermalImpedance
3/9
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