SGS Thomson Microelectronics BUZ80FI, BUZ80 Datasheet
BUZ80
BUZ80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
BUZ80
BUZ 80FI
■ TYPICAL R
■ AVALANCHERUGGEDNESS TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
DS(on)
DSS
800 V
800 V
= 3.3 Ω
R
DS(on)
<4Ω
<4Ω
I
D
3.4 A
2.1 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
BUZ80 BUZ80FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 800 V
DS
Drain- gate Voltage (RGS=20kΩ)800V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC3.42.1A
I
D
Drain Current (continuous) at Tc=100oC2.1 1.3A
I
D
(•) Drain Current (pulsed) 13 13 A
Total Di ssipation a t Tc=25oC 100 40 W
tot
Derat ing Factor 0.8 0.32 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
BUZ80/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 1.25 3.12
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
62.5
0.5
300
3.4 A
180 mJ
4.8 mJ
2.1 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 800 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
= ± 20 V ± 10 0 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=1mA 2 3 4 V
St at ic Drain-s our ce O n
VGS=10V ID= 1.7 A 3.3 4 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
3.4 A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.7A 1 3.5 S
VDS=25V f=1MHz VGS=0 650
82
28
850
105
40
µA
µA
pF
pF
pF
2/10
BUZ80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=640V ID=3A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=30V ID=2.1A
RG=50 Ω VGS=10V
(see test circuit, figure 3)
170 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=3A VGS=10V 42
6
17
VDD=640V ID=3A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
95
20
120
50
110
55 nC
120
25
165
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
3.4
13
(pulsed)
V
(∗) Forward On Voltage ISD=6A VGS=0 2.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=3A di/dt=100A/µs
VDD=80V Tj=150oC
(see test circuit, figure 5)
700
8.8
Charge
I
RRM
Reverse Recovery
25
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
3/10
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