SGS Thomson Microelectronics BUZ72A Datasheet
BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE V
DSS
R
DS(on)
I
D
BUZ 72A 100 V < 0.25 Ω 11 A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
C OPERATING TEMPERATURE
DS(on)
= 0.23 Ω
o
C
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
V
V
I
P
T
June 1993
Drain - s ource Voltage (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC11A
I
D
Drain Current (pulsed) 44 A
DM
Total Di ssipation at Tc=25oC70W
tot
St or a ge Tem perature -65 to 175
stg
Max. Operating Junction Temperature 175
T
j
DIN Humidity Categ or y (DI N 40040) E
IE C Climatic Cate gor y (DIN IEC 68-1) 55/150/56
o
C
o
C
1/7
BUZ72A
THERMAL DATA
R
thj-case
R
thj-amb
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by T
max, δ <1%)
j
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
2.14
62.5
11 A
36 mJ
9mJ
7A
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 100 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
VDS=MaxRating
VDS=MaxRating Tj=125oC
250
1000µAµA
VGS= ± 20 V ± 10 0 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n
VGS=10V ID=5A 0.23 0.25 Ω
Resistance
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS=25V ID=5A 2.7 4.5 S
VDS=25V f=1MHz VGS=0 330
90
25
450
120
40
pF
pF
pF
SWITCHING
Symbol Parameter Test Condition s Min. Typ. Max. Unit
2/7
t
d(on)
t
d(off)
Turn-on T im e
t
Rise Time
r
Tur n - of f Delay Time
Fall Time
t
f
VDD=50V ID=5.5A
RGS=4.7 Ω VGS=10V
10
50
25
20
15
75
40
30
ns
ns
ns
ns
BUZ72A
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
Source-drain Current
(pulsed)
(∗) Forwar d On Voltage ISD=22A VGS=0 1.6 V
V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 11 A di/dt = 100 A/µs
V
=20V Tj=150oC
DD
80
0.22
Charge
(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
11
44
A
A
ns
µC
Derating Curve Output Characteristics
3/7
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