SGS Thomson Microelectronics BUZ71A Datasheet
BUZ71A
N - CHANNEL 50V - 0.1Ω - 13A TO-220
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
BUZ 71A 50 V < 0.12 Ω 13 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ HIGHCURRENT CAPABILITY
o
■ 175
C OPERATINGTEMPERATURE
DS(on)
= 0.1 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ REGULATORS
■ DC-DC& DC-ACCONVERTERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
First digit of the datecode being Zor K identifies silicon characterized in this datasheet.
July 1999
Dra in- sour c e Voltage ( VGS=0) 50 V
DS
Dra in- gate V ol t age (RGS=20kΩ)50V
DGR
Gat e-source Voltage
GS
I
Dra in Current (contin uous) at Tc=25oC13A
D
Dra in Current (pulsed) 52 A
DM
Tot al Dissipation at Tc=25oC40W
tot
St orage Tem pe r at ur e -65 to 175
stg
T
Max. Operat ing Junc tion Tem perature 175
j
20 V
±
DIN HUMIDITY CAT EG O RY (DIN 40040) E
IE C CLIMATIC CAT EG O RY (DI N IEC 68-1) 55/150/ 56
o
C
o
C
1/8
BUZ71A
THERMAL DATA
R
thj-case
R
thj-amb
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case M a x 3.75
Ther mal Resistanc e Junct ion-ambient Max 62.5
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan che Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
14 A
50 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 50 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tj=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V
Sta t ic Drain-sour c e On
VGS=10V ID=9A 0.1 0.12
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS=25V ID=9A 4 7.7 S
VDS=25V f=1MHz VGS= 0 760
100
30
µ
µA
Ω
pF
pF
pF
A
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. Unit
2/8
t
d(on)
t
t
d(off)
t
Turn-on Time
Rise T ime
r
Tur n-of f Delay Time
Fall T ime
f
VDD=30V ID=8A
=50 Ω VGS=10V
R
GS
20
65
70
35
ns
ns
ns
ns
BUZ71A
ELECTRICAL CHARACTERISTICS
(continued)
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5 %
Source-drain Current
Source-drain Current
13
52
(pulsed)
(∗)ForwardOnVoltage ISD=28A VGS=0 1.8 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 14 A di/dt = 100 A/ µs
V
=30V Tj= 150oC
DD
65
0.17
Charge
A
A
ns
µC
SafeOperating Area ThermalImpedance
3/8
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