SGS Thomson Microelectronics BUZ71 Datasheet
BUZ71
N - CHANNEL 50V - 0.085Ω - 17A TO-220
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
BUZ71 50 V < 0.1 Ω 17 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ HIGHCURRENT CAPABILITY
o
■ 175
C OPERATINGTEMPERATURE
DS(on)
= 0.085 Ω
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ REGULATORS
■ DC-DC& DC-ACCONVERTERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVEENVIRONMENT(INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
First digit of the datecode being Zor Kidentifies silicon characterized in this datasheet.
July 1999
Dra in- sour c e Volt age (VGS=0) 50 V
DS
Dra in- gat e Voltage (RGS=20kΩ)50V
DGR
Gat e-source Volt age
GS
I
Dra in Cu rr ent ( c ont inuous) at Tc=25oC17A
D
Dra in Cu rr ent ( p ulsed) 68 A
DM
Tot al Diss ipation at Tc=25oC60W
tot
St orage T empe r at ure -65 to 175
stg
T
Max. Operating J unction Tem per at ur e 175
j
20 V
±
DIN HUMI DITY CAT E G O RY (DIN 40040) E
IE C CLIMA TIC CAT EGORY (DIN IEC 68-1) 55/150/ 56
o
C
o
C
1/8
BUZ71
THERMAL DATA
R
thj-case
R
thj-amb
AVALANCHE CHARACTERISTICS
Symbol Parameter Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 2.5
Ther mal Resistanc e Junct ion-ambient Max 62.5
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche E nergy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
17 A
50 mJ
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 50 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tj=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V
Sta t ic Drain-s our c e On
VGS=10V ID= 9 A 0.085 0.1
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. U nit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac it anc e
oss
Reverse Transfer
rss
Capacit a nc e
VDS=25V ID=9A 4 7.7 S
VDS=25V f=1MHz VGS= 0 760
100
30
µ
µA
Ω
pF
pF
pF
A
SWITCHING
Symbol Parameter Test Conditions Min. Typ. Max. U nit
2/8
t
d(on)
t
t
d(off)
t
Turn-on Time
Rise Time
r
Tur n-of f Dela y Tim e
Fall T ime
f
VDD=30V ID=8A
=50 Ω VGS=10V
R
GS
20
65
70
35
ns
ns
ns
ns
BUZ71
ELECTRICAL CHARACTERISTICS
(continued)
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. U nit
I
SD
I
SDM
V
SD
t
Q
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain Current
Source-drain Current
17
68
(pulsed)
(∗)ForwardOnVoltage ISD=28A VGS=0 1.8 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 14 A di/dt = 100 A/µs
V
=30V Tj=150oC
DD
65
0.17
Charge
A
A
ns
µC
SafeOperating Area ThermalImpedance
3/8
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