SGS Thomson Microelectronics BUZ11A Datasheet



BUZ11A

N - CHANNEL 50V - 0.045Ω - 26A TO-220

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

BUZ 11A 50 V < 0.055 Ω 26 A

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

■ HIGHCURRENT CAPABILITY

o

■ 175

C OPERATINGTEMPERATURE

DS(on)

= 0.045 Ω

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

P

T

First digit of the datecode being Zor Kidentifies silicon characterized in this datasheet.

July 1999

Dra in- sour c e Volt age (VGS=0) 50 V

DS

Dra in- gat e Voltage (RGS=20kΩ)50V

DGR

Gat e-source Volt age

GS

I

Dra in Cu rr ent ( c ont inuous) at Tc=25oC26A

D

Dra in Cu rr ent ( p ulsed) 104 A

DM

Tot al Diss ipation at Tc=25oC75W

tot

St orage T empe r at ure -65 to 175

stg

T

Max. Operating J unction Tem per at ur e 175

j

20 V

±

DIN HUMI DITY CAT E G O RY (DIN 40040) E IE C CLIMA TIC CAT EGORY (DIN IEC 68-1) 55/150/ 56

o

C

o

C

1/8

BUZ11A

THERMAL DATA

R

thj-case

R

thj-amb

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pul se Avalanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=30V)

j

max,δ <1%)

j

1.67

62.5

30 A

120 mJ

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 50 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tj=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V Sta t ic Drain-s our c e On

VGS=10V ID= 19 A 0.045 0.055

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

gfs(∗)Forward

Tr ansc on duc tance

C

Input Capaci t ance

iss

Out put Capac it anc e

oss

Reverse Transfer

rss

Capacit a nc e

VDS=25V ID= 19 A 10 17 S

VDS=25V f=1MHz VGS= 0 1400

200

50

µA µA

Ω

pF pF pF

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. U nit

2/8

t

d(on)

t

d(off)

Turn-on Time Rise Time

r

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=30V ID=15A R

GS

=4.7

Ω

VGS=10V

18 95 50 20

ns ns ns ns

BUZ11A

ELECTRICAL CHARACTERISTICS

(continued)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain Current Source-drain Current

26

104

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.8 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 26 A di/dt = 100 A/µs V

=30V Tj=150oC

DD

85

0.19

Charge

A A

ns

µC

SafeOperating Area ThermalImpedance

3/8