SGS Thomson Microelectronics BUZ11 Datasheet



BUZ11

N - CHANNEL 50V - 0.03Ω - 33A TO-220

STripFET MOSFET

TYPE V

DSS

BUZ11 50 V < 0.04

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

■ HIGHCURRENT CAPABILITY

o

■ 175

C OPERATINGTEMPERATURE

DS(on)

= 0.03 Ω

R

DS(on)

I

D

33 A

Ω

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

P

T

First digit of the datecode being Zor K identifies silicon characterized inthis datasheet.

July 1999

Dra in- sour c e Volt age (VGS=0) 50 V

DS

Dra in- gat e Voltage (RGS=20kΩ)50V

DGR

Gat e-source Volt age

GS

I

Dra in Cu rr ent (continuous) a t Tc=25oC33A

D

Dra in Cu rr ent (p uls ed ) 134 A

DM

Tot al Dissipation at Tc=25oC90W

tot

St orage Temperatur e -65 to 175

stg

T

Max. Operating Junction Tem perature 175

j

20 V

±

DIN HUMIDI T Y CATEGORY (DIN 40040) E IE C C LI M ATIC CAT EGORY (DIN IE C 68-1) 55/150/ 56

o

C

o

C

1/8

BUZ11

THERMAL DATA

R

thj-case

R

thj-amb

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max 1.67 Ther mal Resistanc e Junct ion-ambient Max 62.5

Avalanche Current, R epetitive or Not-Repetitive (pulse width limited by T

Single Pul se A valanche E ner gy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max, δ <1%)

j

33 A

200 mJ

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 50 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tj=125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V Sta t ic Dr ain -s ource O n

VGS=10V ID= 19 A 0.03 0.04

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input C apac i t anc e

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS=15V ID= 19 A 10 17 S

VDS=25V f=1MHz VGS= 0 2100

260

65

µ µA

Ω

pF pF pF

A

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. U nit

2/8

t

d(on)

t

d(off)

t

Turn-on Time Rise T i m e

r

Tur n-of f Delay Time Fall T ime

f

VDD=30V ID=18A

=50 Ω VGS=10V

R

GS

40 200 220 110

ns ns ns ns

BUZ11

ELECTRICAL CHARACTERISTICS

(continued)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

(∗) Pulsed: Pulse duration = 300µs, dutycycle 1.5 %

Source-drain Current Source-drain Current

33

134

(pulsed)

(∗)ForwardOnVoltage ISD=60A VGS=0 1.8 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 36 A di/dt = 100 A/µs V

=30V Tj= 150oC

DD

75

0.24

Charge

A A

ns

µC

SafeOperating Area ThermalImpedance

3/8