SGS Thomson Microelectronics BUZ10 Datasheet



BUZ10

N - CHANNEL 50V - 0.06Ω - 23A TO-220

STripFET MOSFET

TYPE V

DSS

BUZ10 50 V < 0.07

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100%AVALANCHETESTED

■ HIGHCURRENT CAPABILITY

o

■ 175

C OPERATINGTEMPERATURE

DS(on)

= 0.06 Ω

R

DS(on)

I

D

23 A

Ω

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ SOLENOIDAND RELAYDRIVERS

■ REGULATORS

■ DC-DC& DC-ACCONVERTERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ AUTOMOTIVEENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc.)

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

P

T

First digit of the datecode being Zor K identifies silicon characterized inthis datasheet.

February 2000

Dra in- sour c e Volt age (VGS=0) 50 V

DS

Dra in- gat e Voltage (RGS=20kΩ)50V

DGR

Gat e-source Volt age

GS

I

Dra in Cu rr ent (continuous) a t Tc=25oC23A

D

Dra in Cu rr ent (p uls ed ) 92 A

DM

Tot al Dissipation at Tc=25oC75W

tot

St orage Temperatur e -65 to 175

stg

T

Max. Operating Junction Tem perature 175

j

20 V

±

DIN HUMIDI T Y CATEGORY (DIN 40040) E IE C C LI M ATIC CAT EGORY (DIN IE C 68-1) 55/150/ 56

o

C

o

C

1/8

BUZ10

THERMAL DATA

R

thj-case

R

thj-amb

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient M ax

Avalanche Current, R epetitive or Not-Repetitive (pulse width limited by T

Single Pul se A valanche E ner gy

AS

(starting T

=25oC, ID=IAR,VDD=30V)

j

max,δ <1%)

j

2.0

62.5

10 A

150 mJ

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 50 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tj=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=1mA 2.1 3 4 V Sta t ic Dr ain -s ource O n

VGS=10V ID= 14 A 0.06 0.07

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

gfs(∗)Forward

Tr ansc on duc tance

C

Input C apac i t anc e

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS=25V ID=14A 6 11 S

VDS=25V f=1MHz VGS= 0 900

130

40

µA µA

Ω

pF pF pF

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. U nit

2/8

t

d(on)

t

d(off)

Turn-on Time Rise T i m e

r

Tur n-of f Delay Time

t

Fall T ime

f

VDD=30V ID=10A R

GS

=4.7

Ω

VGS=10V

20 45 48 10

ns ns ns ns

BUZ10

ELECTRICAL CHARACTERISTICS

(continued)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

(∗) Pulsed: Pulse duration = 300µs, dutycycle 1.5 %

Source-drain Current Source-drain Current

23 92

(pulsed)

(∗)ForwardOnVoltage ISD=46A VGS=0 1.9 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 23 A di/dt = 100 A/ µs V

=30V Tj=150oC

DD

50

0.17

Charge

A A

ns

µC

SafeOperating Area ThermalImpedance

3/8