SGS Thomson Microelectronics BUY49S Datasheet
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ FAST SWITCHING SPEED
■ LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
DESCRIPTION
The BUY49S is a silicon epitaxial planar NPN
transistor in jedec TO-39 package. It is used in
high-current switching applications up to 3 A.
BUY49S
SILI CON NPN TRANSISTOR
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUT E MAXIMUM RATI NG S
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 250 V
CBO
Collector-Emitter Voltage (IB = 0) 200 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Total Power Dissipation at T
tot
Storage Temperature - 65 to 200
stg
Max Operating Junction Temperature 200
T
j
≤ 25 oC10W
amb
o
C
o
C
June 1997
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BUY49S
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-case-ambient Max
15
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CB O
Collector Cut-off
Current (I
= 0 )
E
* Collector-Base
= 200 V
V
CB
V
= 200 V T
CB
I
= 100 µA 250 V
C
= 150 oC
case
0.1
50
Breakdown Voltage
(I
= 0 )
E
V
CEO(sus)
* Collector-Emitter
I
= 20 mA 200 V
C
Sustaining Voltage
(I
= 0)
B
V
* Emitter-base Voltage
V
CE(sat)
EBO
(I
= 0)
C
* Collector-Emitter
= 1 mA 6 V
I
E
IC = 0.5 A IB = 50 mA 0.2 V
Saturation Voltage
V
BE(sat)
* Collector-Emitter
IC = 0.5 A IB = 50 mA 1.1 V
Saturation Voltage
* DC Current Gain IC = 20 mA V
h
FE
f
C
CBO
Transistor Frequency IC = 100 mA V
T
Collector-base
Capacitance
t
t
I
s/b
Turn-on Time IC = 0.5 A V
on
Turn-off Time IB1 = - I
off
** Second Breakdown
I
= 0.5 A VCE = 5 V
C
I
= 20 mA VCE = 2 V
C
T
= - 55 oC
case
IE = 0 VCB = 10 V
f
= 1 MHz
= 50 mA 1 µs
B2
V
= 50 V 0.2 A
CE
= 5 V
CE
= 10 V 50 MHz
CE
= 20 V 0.3 µs
CC
40
40
16
80
30 pF
Collector Current
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
∗∗ Pulsed: 1 s, non repetitive pulse.
µA
µA
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