SGS Thomson Microelectronics BUXD87 Datasheet

®
HIGH VOLTAGE NPN POWER TRANSISTOR
REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAG E
HIGH VOLTAGE CAPABILITY
HIGH DC CURRENT GAIN
THROUGH-HO LE IPAK (TO -251) POW E R
PACKAGE IN TU BE (SUFFIX "-1")
POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
BUXD87
3
2
1
3
1
APPLICATIONS:
SWITCH MODE POWER SUPPLI ES
GENERAL PURPOSE SWITCHING
IPAK DPAK
TO-251 TO-252
(Suffix "-1") (Suffix "T4")
DESCRIPTION
The BUXD87 is manufactured us ing High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V V V
I
I P
T
Collector-Emitter Voltage (VBE = -1.5V) 1000 V
CEV
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 0.5 A
I
C
Collector Peak Current (tp < 5 ms) 1 A
CM
I
Base Current 0.3 A
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
April 1999
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BUXD87
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max
6.25 100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off Current (V
= -1.5V)
BE
Emitter Cut-off Current (I
= 0)
C
Collector-Emitter
= 1000 V
V
CE
V
= 1000 V Tj = 125 oC
CE
= 5 V 1 mA
V
EB
100
1
IC = 100 mA 450 V
Sustaining Voltage
V
BEO
Collector-Base
IC = 10 mA 5 V
Sustaining Voltage
V
Collector-Emitter
CE(sat)
Saturation Voltage
V
Base-Emitter
BE(sat)
IC = 0.1 A IB = 0.01 A I
= 0.2 A IB = 0.02 A
C
0.8 1
IC = 0.2 A IB = 0.02 A 1 V
Saturation Voltage
h
DC Current Gain IC = 50 mA VCE = 5 V
FE
f
Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
T
RESISTIVE LOAD
t
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time Fall Time
I
= 40 mA VCE = 5 V 12
C
VCC = 250 V IC = 200 mA I
= 40 mA IB2= -80 mA
B1
= 20 µs
t
p
50
4.5
0.5
µA
mA
V V
µs µs
Safe Operating Are a Derating Curves
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