![](/html/c6/c646/c6463d43e6ad8e305617024a02086d30b5d8c217f036e4d2546ae15ab41b08b1/bg1.png)
®
HIGH VOLTAGE NPN POWER TRANSISTOR
■ REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAG E
■ HIGH VOLTAGE CAPABILITY
■ HIGH DC CURRENT GAIN
■ THROUGH-HO LE IPAK (TO -251) POW E R
PACKAGE IN TU BE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
BUXD87
3
2
1
3
1
APPLICATIONS:
■ SWITCH MODE POWER SUPPLI ES
■ GENERAL PURPOSE SWITCHING
IPAK DPAK
TO-251 TO-252
(Suffix "-1") (Suffix "T4")
DESCRIPTION
The BUXD87 is manufactured us ing High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = -1.5V) 1000 V
CEV
Collector-Emitter Voltage (IB = 0) 450 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 0.5 A
I
C
Collector Peak Current (tp < 5 ms) 1 A
CM
I
Base Current 0.3 A
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
April 1999
1/6
![](/html/c6/c646/c6463d43e6ad8e305617024a02086d30b5d8c217f036e4d2546ae15ab41b08b1/bg2.png)
BUXD87
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5V)
BE
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 1000 V
V
CE
V
= 1000 V Tj = 125 oC
CE
= 5 V 1 mA
V
EB
100
1
IC = 100 mA 450 V
Sustaining Voltage
V
BEO
Collector-Base
IC = 10 mA 5 V
Sustaining Voltage
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 0.1 A IB = 0.01 A
I
= 0.2 A IB = 0.02 A
C
0.8
1
IC = 0.2 A IB = 0.02 A 1 V
Saturation Voltage
h
∗ DC Current Gain IC = 50 mA VCE = 5 V
FE
f
Transition Frequency IC = 50 mA VCE = 10 V f=1MHz 20 MHz
T
RESISTIVE LOAD
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
Storage Time
Fall Time
I
= 40 mA VCE = 5 V 12
C
VCC = 250 V IC = 200 mA
I
= 40 mA IB2= -80 mA
B1
= 20 µs
t
p
50
4.5
0.5
µA
mA
V
V
µs
µs
Safe Operating Are a Derating Curves
2/6