SGS Thomson Microelectronics BUX98C Datasheet
HIGH POWER NPN SILICON TRANSISTOR
■ SGS-THOMS O N PREF ERRE D SA LES TYP E
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ HIGH CURRENT CAPABILITY
■ FAST SWITCHING SPEED
APPLICATIONS:
■ HIGH FREQUENCY AND EFFICENCY
CONVERTERS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
BUX98C
1
2
DESCRIPTION
The BUX98C is a silicon multiepitaxial mesa NP N
TO-3
(version R)
transistor in Jedec TO-3 metal case, intended for
use in switching and industrial applications from
single and three-phase mains operations.
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
CMP
I
P
T
Collector-Emitter Voltage (RBE ≤ 0 Ω) 1200 V
CER
Collector-Emitter Voltage (VBE = 0) 1200 V
CES
Collector-Emitter Voltage 700 V
CEO
Emitter-Base Voltage (IC = 0) 7 V
EBO
Collector Current 30 A
I
C
Collector Peak Current (tp < 5 ms) 60 A
CM
Collector Peak Current non Repetitive 80 A
Base Current 8 A
I
B
Base Peak Current (tp < 5 ms) 30 A
BM
Total Dissipation at Tc = 25 oC250W
tot
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
o
C
o
C
June 1997
1/4
BUX98C
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CER
I
CES
I
CEO
I
EBO
V
CEO(sus)
Collector Cut-off
Current (R
= 10 Ω)
BE
Collector Cut-off
Current (V
BE
= 0 )
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= V
V
CE
VCE = V
V
VCE = V
V
V
CES
T
CES
= V
CE
CES
T
CES
= V
CE
CEO
= 5 V 2 mA
CB
= 125 oC
case
= 125 oC
case
1
8
1
6
2mA
IC = 100 mA 700 V
Sustaining Voltage
V
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
∗ Collector-Emitter
CE(sat)
Saturation Voltage
∗ Base-Emitter
BE(sat)
Saturation Voltage
t
t
on
s
t
f
Turn-on Time
Storage Time
Fall Time
IC = 12 A IB = 3 A
I
= 16 A IB = 5 A
C
I
= 20 A IB = 8 A
C
IC = 12 A IB = 3 A
I
= 20 A IB = 8 A
C
RESISTIVE LOAD
V
CC
I
B1
= 250 V IC = 12 A
= - IB2 = 3 A
0.5
1.5
0.2
1.5
2
3
1.6
2
1
3
0.8
mA
mA
mA
mA
V
V
V
V
V
µs
µs
µs
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