SGS Thomson Microelectronics BUH615D Datasheet
®
HIGH VOLTAGE FAS T-SWITCHING
■ STMicroelectronics PREFE RRED
SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
■ U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
BUH615D
NPN POWER TRANSISTOR
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BUH615D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switchi ng speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
ISOWATT218
INTER NAL SCH E M ATI C DIAG RA M
Symbol Parameter Value Unit
V
V
V
I
I
P
T
December 1999
Collector-Base Voltage (IE = 0) 1500 V
CBO
Collector-Emitter Voltage (IB = 0) 700 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current (tp < 5 ms) 12 A
CM
Base Current 5 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Dissipation at Tc = 25 oC55W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/4
BUH615D
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CE(sat)
CES
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 1500 V
V
CE
V
= 1500 V Tj = 125 oC
CE
= 5 V 300 mA
V
EB
0.2
2
IC = 6 A IB = 2.5 A 1.5 V
Saturation Voltage
∗ Base-Emitter
V
BE(sat)
IC = 6 A IB = 2.5 A 1.3 V
Saturation Voltage
h
∗ DC Current Gain IC = 6 A VCE = 5 V 4 9
FE
RESISTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
V
= 400 V IC = 6 A
CC
I
= 1.5 A IB2 = -3 A 2.7
B1
I
= 6 A f = 15625 Hz
C
I
= 1.25 A I
B1
V
I
C
I
B1
V
= 1050 sin
ceflyback
= 6 A f = 31250 Hz
= 1.5 A I
= 1200 sin
ceflyback
B2
B2
= -3 A
π
10
= -3 A
π
10
5
10
6
6
t V
t V
190
2.3
350
2.3
200
3.9
280
mA
mA
µs
ns
µs
ns
µs
ns
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Diode Forward Voltage IF = 5 A 2 V
f
2/4
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