SGS Thomson Microelectronics BUH515 Datasheet



HIGH VOLTAGE FAST-SWITCHING

■ HIGH VOLTAGECAPABILITY

■ U.L.RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734(N)).

APPLICATIONS:

■ HORIZONTAL DEFLECTION FOR COLOUR

TV AND MONITORS

■ SWITCHMODEPOWER SUPPLIES

BUH515

NPN POWER TRANSISTOR

3

2

1

DESCRIPTION

ISOWATT218

The BUH515 is manufacturedusing Multiepitaxial Mesa technology for cost-effective high performanceand usesa Hollow Emitterstructure to enhance switching speeds.

The BUH series is designed for use in horizontal deflectioncircuits in televisionsand monitors.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V V V

I

I P

T

Collect or-Base Vol tage (IE= 0 ) 1500 V

CBO

Collect or-Emitter V oltage (IB= 0 ) 700 V

CEO

Emitter-Base Volt age (IC=0) 10 V

EBO

Collect or Current 8 A

I

C

Collect or Peak Cu rrent (tp<5ms) 12 A

CM

Base Current 5 A

I

B

Base P eak Current (tp<5ms) 8 A

BM

Tot al Dissipa t io n at Tc=25oC50W

tot

Storage Temperature -65 to 150

stg

Max. Ope rating Jun ct ion Tem pe r ature 150

T

j

o

C

o

C

November 1999

1/7

BUH515

THERMAL DATA

R

thj-case

Ther mal Resist ance Junctio n-c a se Max 2.5

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Cond ition s Min. Typ. Max. Un it

I

CES

I

EBO

V

CEO(sus)

Collec t or Cut -off Current (V

BE

=0)

Emitt er Cut-off Current

=0)

(I

C

∗ Co llector-Emit t er

V

= 1500 V

CE

= 1500 V Tj=125oC

V

CE

V

=5V 100 µA

EB

I

= 10 0 m A 700 V

C

0.2 2

Sust aining Voltage

=0)

(I

B

V

EBO

Emitter-Base Voltage (I

∗ Collec t or -Emit t er

V

CE(sat)

C

=0)

I

=10mA 10 V

E

IC=5A IB=1.25A 1.5 V

Saturation Voltage

∗ Base-Emi tter

V

BE(sat)

IC=5A IB=1.25A 1.3 V

Saturation Voltage

∗ DC Current Gain IC=5A VCE=5V

h

FE

t

RESI STIVE LOAD Storage Tim e

s

Fall Time

f

INDUCTIVE LOAD Storage Tim e

s

Fall Time

f

=5A VCE=5V Tj=100oC

I

C

VCC=400V IC=5A

=1.25A IB2= 2.5 A 2.7

I

B1

IC= 5 A f = 15625 Hz

=1.25A IB2=-1.5A

I

B1

V

ceflyback

=1050sin

6 4

190

2.3



π



6

tV

10





5





350

12

3.9

280

mA mA

µs ns

INDUCTIVE LOAD

s

t

f

Storage Tim e Fall Time

t

∗

Pulsed: Pulse duration = 300 µs, duty cycle1.5 %

IC= 5A f = 31250 Hz

=1.25A IB2=-1.5A

I

B1



π



V

ceflyback

=1200sin

6

10





5





tV

Safe OperatingArea ThermalImpedance

2/7

2.3

200

µs ns

BUH515

Derating Curve

CollectorEmitter SaturationVoltage

DC Current Gain

BaseEmitter Saturation Voltage

PowerLosses at 16 KHz

SwitchingTime InductiveLoad at 16KHz (see figure2)

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