SGS Thomson Microelectronics BUH315 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISEDISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
BUH315
NPN POWER TRANSISTOR
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
■ SWITCHMODEPOWERSUPPLIES
DESCRIPTION
The BUH315 is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performanceand usesa Hollow Emitterstructure
to enhanceswitchingspeeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
November 1999
Collect or-Base Vol tage (IE= 0 ) 1500 V
CBO
Collect or-Emitter Volt age ( IB= 0 ) 700 V
CEO
Emitter-Base Vol tage (IC=0) 10 V
EBO
Collect or Current 6 A
I
C
Collect or Peak Cu r rent (tp<5ms) 12 A
CM
Base Current 3 A
I
B
Base P eak Current (tp<5ms) 5 A
BM
Tot al Dissipation at Tc=25oC44W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Jun c tion Te m pe r ature 150
T
j
o
C
o
C
1/7
BUH315
THERMAL DATA
R
thj-case
Ther mal Resist ance Junctio n-c a se Max 2.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Current
=0)
(I
C
∗ Co llector-Emit t er
V
= 1500 V 200 µA
CE
V
=5V 100 µA
EB
I
= 10 0 m A 700 V
C
Sust aining Voltage
=0)
(I
B
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
=0)
C
∗ Collec t or -Emit t er
=10mA 10 V
I
E
IC=3A IB=0.75A 1.5 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=3A IB=0.75A 1.3 V
Saturation Voltage
∗ DC Current Gain IC=3A VCE=5V
h
FE
t
t
t
t
RESI STIVE LOAD
Storage Ti me
s
Fall Time
f
INDUCTIVE LOAD
Storage Ti me
s
Fall Time
f
=3A VCE=5V Tj=100oC
I
C
VCC=400V IC=3A
=0.75A IB2= 1.5 A 1.6
I
B1
IC= 3 A f = 15625 Hz
I
=0.75A IB2=-1.5A
B1
V
ceflyback
=1050sin
6
3.5
110
3.5
π
6
tV
10
5
340
12
2.4
200
µs
ns
µs
ns
INDUCTIVE LOAD
s
t
f
Storage Ti me
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC= 3 A f = 31250 Hz
=0.75A IB2=-1.5A
I
B1
π
V
ceflyback
=1200sin
6
10
5
tV
Safe Operating Area Thermal Impedance
2/7
3.5
270
µs
ns
BUH315
Derating Curve
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturation Voltage
PowerLosses at 16 KHz
SwitchingTime InductiveLoad at 16KHz
(see figure 2)
3/7
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