SGS Thomson Microelectronics BUH2M20AP Datasheet
®
■ EXTRA HIGH VOLTAGE CAPABILITY
■ LOW OUTPUT CAPACITANCE
■ CHARACTERIZE D FOR LINE AR MODE
OPERATION.
APPLICATIONS:
■ DESIGNED SP E CIF ICA LLY FOR DYN A MIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION
The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
BUH2M20AP
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 2000 V
CBO
Collector-Emitter Voltage (IB = 0) 1200 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 30 mA
I
C
Collector Peak Current (tp < 5 ms) 40 mA
CM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
September 1998
1/4
BUH2M20AP
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CBO
EBO
CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 2000 V 5 µA
V
CE
= 4 V 10 µA
V
EB
IC = 1 mA 1200 V
Breakdown Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
= 10 µA 5 V
I
E
IC = 2 mA IB = 400 µA5V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 2 mA IB = 400 µA2V
Saturation Voltage
∗ DC Current Gain IC = 2 mA VCE = 10 V
h
FE
C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Output Capacitance VCB = 100 V IC = 0 f = 1MHz 3 pF
ob
I
= 10 mA VCE = 10 V
C
10
10
Safe Operating Are a
2/4
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