SGS Thomson Microelectronics BUH1215 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHINGSPEED
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV AND MONITORS
DESCRIPTION
The BUH1215 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
BUH1215
NPN POWER TRANSISTOR
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Base Vol t age ( IE= 0) 1500 V
CBO
Collect or-Emitte r Volt age ( IB= 0) 700 V
CEO
Emitter-Base Vol tage (IC=0) 10 V
EBO
Collect or Current 16 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 22 A
CM
Base Current 9 A
I
B
Base P eak Cu rrent (tp<5ms) 12 A
BM
Tot al Dissipa t ion at Tc=25oC 200 W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Jun c t io n T empe rature 150
T
j
o
C
o
C
January 1999
1/7
BUH1215
THERMAL DATA
R
thj-case
Ther mal Resist ance Junctio n- case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut -of f Cu rrent
=0)
(I
C
Collec t or -Emitter
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
V
=5V 100 µA
EB
0.2
2
IC= 100 m A 700 V
Sust aining Volt age
V
EBO
Emitter-Base Voltage
(I
∗ Collec t or -Emitter
V
CE(sat)
C
=0)
I
=10mA 10 V
E
IC=12A IB= 2.4 A 1.5 V
Saturation Voltage
∗ Base-Emitter
V
BE(sat )
IC=12A IB= 2.4 A 1.5 V
Saturation Voltage
∗ DC C ur rent Ga in IC=12A VCE=5V
h
FE
t
t
t
t
RESI STIVE LOAD
Storage Ti me
s
Fall Time
f
INDUCTIVE LO AD
Storage Ti me
s
Fall Time
f
=12A VCE=5V Tj=100oC
I
C
VCC=400V IC=12A
I
=2A IB2=-6A 1.5
B1
IC= 12 A f = 31250 Hz
I
=2A IB2=-1.5A
B1
V
ceflyback
=1050sin
7
5
π
6
tV
10
5
10 14
110
4
220
mA
mA
µs
ns
µs
ns
INDUCTIVE LO AD
s
t
f
Storage Ti me
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC=6A f=64KHz
=1A V
I
B1
V
ceflyback
=1200sin
BE(of f)
=-2A
π
10
5
6
tV
Safe Operating Area ThermalImpedance
3.5
180
µs
ns
2/7
BUH1215
Derating Curve
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturation Voltage
PowerLosses at 64 KHz
SwitchingTime InductiveLoad at 64 KHz
(see figure 2)
3/7
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