SGS Thomson Microelectronics BUH1015HI, BUH1015 Datasheet
BUH1015
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPES
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHING SPEED
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV AND MONITORS
DESCRIPTION
The BUH1015and BUH1015HI are manufactured
using Multiepitaxial Mesa technology for
cost-effectivehigh performance and use a Hollow
Emitter structure to enhance switching speeds.
The BUHseries is designedfor use in horizontal
deflectioncircuits in televisionsand monitors.
BUH1015HI
NPN POWER TRANSISTOR
3
2
1
TO-218 ISOWATT218
2
1
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Uni t
V
V
V
I
I
P
T
Collector-Base Voltage (IE= 0) 1500 V
CBO
Collector-Emitte r Voltage ( IB= 0) 700 V
CEO
Emit t er-Bas e Voltage ( IC=0) 10 V
EBO
Collector Current 14 A
I
C
Collector Peak Current (tp<5ms) 18 A
CM
Base Current 8 A
I
B
Base Peak Curr ent (tp<5ms) 11 A
BM
Total D issipation at Tc=25oC 160 70 W
tot
St orage Temperatu re -65 t o 15 0
stg
Max. Operating Junction Tempera t ur e 150
T
j
o
C
o
C
December 1999
1/8
BUH1015/BUH1015HI
THERMAL DATA
R
thj-case
Ther mal Resistance Ju nc t io n-c ase Max 0.78 1.8
TO-218 ISOWATT218
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
Collector Cut-of f
Current (V
BE
=0)
Emit ter Cut-off Current
=0)
(I
C
∗ Collector-Emitt er
V
=1500V
CE
=1500V Tj= 125oC
V
CE
V
=5V 100 µA
EB
I
= 100 mA 700 V
C
0.2
2
Sust aining Voltag e
=0)
(I
B
V
V
CE(sat)
EBO
Emitt er-Base Voltage
=0)
(I
C
∗ Co llector-E mitter
I
=10mA 10 V
E
IC=10A IB=2A 1.5 V
Saturation Volta ge
V
BE(sat)
∗ Base-Emitt er
IC=10A IB=2A 1.5 V
Saturation Volta ge
∗ DC Curr ent Gain IC=10A VCE=5V
h
FE
RESI STIVE LOAD
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LOA D
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LOA D
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
s
t
f
St orage Time
Fall Time
=10A VCE=5V Tj=100oC
I
C
VCC=400V IC=10A
=2A IB2=-6A 1.5
I
B1
IC= 10 A f = 312 50 H z
=2A IB2=-6A
I
B1
V
ceflyback
IC=6A f=64KHz
=1A
I
B1
=-2V
V
beoff
V
ceflyback
= 1200 si n
= 1100 si n
7
5
π
6
tV
10
5
π
6
tV
10
5
10 14
110
4
220
3.7
200
mA
mA
µs
ns
µs
ns
µs
ns
Safe OperatingArea For TO-218 Safe OperatingArea For ISOWATT218
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BUH1015/BUH1015HI
Thermal Impedancefor TO-218
DeratingCurve
ThermalImpedance for ISOWATT218
DCCurrent Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
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