SGS Thomson Microelectronics BUF420A Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronics PREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ VERYHIGH SWITCHING SPEED
■ MINIMUMLOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ LOW BASE-DRIVE REQUIREMENTS
BUF420A
NPN POWER TRANSISTOR
APPLICATIONS:
■ SWITCHMODE POWERSUPPLIES
■ MOTORCONTROL
DESCRIPTION
TO-218
3
2
1
The BUF420A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaininga wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE= -1. 5V) 1000 V
CEV
Collector-Emitter Voltage (IB= 0) 450 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
Collect or Current 30 A
I
C
Collect or Peak Cu rr ent ( tp<5ms) 60 A
CM
Base Current 6 A
I
B
Base Peak Current (tp<5ms) 9 A
BM
Total Dissipat ion at Tc=25oC 200 W
tot
Stora ge T emper at u re -65 to 150
stg
Max. Oper at i ng Junction Tem per at u r e 150
T
j
o
C
o
C
June 2000
1/6
BUF420A
THERMAL DATA
R
thj-case
Ther mal Resistance Junction-Case Max 0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CER
I
CEV
I
EBO
V
CEO(sus )
Collector C ut -of f
Current (R
BE
=5Ω)
Collector C ut -of f
Current (V
= -1. 5V)
BE
Emit ter Cut -off Curr ent
=0)
(I
C
∗ Collec tor-Emit t er
V
=1000V
CE
=1000V Tc= 100oC
V
CE
V
=1000V
CE
=1000V Tc= 100oC
V
CE
V
=5V 1 mA
BE
I
= 200 m A L = 25 mH 450 V
C
0.2
1
0.2
1
Sust aining Volt age
=0)
(I
B
V
V
CE(sat)
EBO
Emit ter Bas e Vo lt age
=0)
(I
C
∗ Collector-Emit t er
Saturation Voltage
V
∗ Base-Emitt er
BE(sat)
Saturation Voltage
di
/dt Rate of rise on-state
c
Collector C urr ent
V
(3µs) Co llector-Emit t er
CE
Dynamic V o lt age
V
(5µs) Co llector-Emit t er
CE
Dynamic V o lt age
INDUCTIVE LOAD
t
t
St orage Time
s
t
Fall Time
f
Cross Over Time
c
INDUCTI VE LO A D
V
t
t
CEW
St orage Time
s
t
Fall Time
f
Cross Over Time
c
Maximum Collector
Emit ter Voltage
without Snubber
INDUCTI VE LO A D
t
t
St orage Time
s
t
Fall Time
f
Cross Over Time
c
I
=50mA 7 V
E
IC=10A IB=1A
=10A IB=1A Tc=100oC
I
C
=20A IB=2A
I
C
=20A IB=2A Tc=100oC
I
C
IC=10A IB=1A
=10A IB=1A Tc=100oC
I
C
=20A IB=2A
I
C
=20A IB=2A Tc=100oC
I
C
=300V RC=0 tp=3µs
V
CC
=1.5A Tj=25oC
I
B1
=1.5A Tj=100oC
I
B1
=6A Tj=100oC
I
B1
=300V RC=60Ω
V
CC
I
=1.5A Tj=25oC
B1
=1.5A Tj=100oC
I
B1
=300V RC=60Ω
V
CC
=1.5A Tj=25oC
I
B1
=1.5A Tj=100oC
I
B1
70
150
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
100 A /µs
2.1
8
1.1
4
IC=10A VCC=50V
=-5V RBB=0.6 Ω
V
BB
= 400 V IB1=0.5A
V
clamp
L = 0.25 mH
1
0.05
0.08
IC=10A VCC=50V
=-5V RBB=0.6Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0.25 mH T
=100oC
j
IC=10A VCC=50V
=-5V RBB=0.6Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0.25 mH T
=125oC
j
500 V
2
0.1
0.18
IC=10A VCC=50V
=0 RBB=0.15Ω
V
BB
= 400 V IB1=1A
V
clamp
L = 0.25 mH
1.5
0.04
0.07
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6
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