SGS Thomson Microelectronics BUF405A Datasheet
BUF405A
HIGH VOLTAGE FAST-SWITCHING
■ HIGH SWITCHING SPEEDNPNPOWER
TRANSISTORS
■ EASY TODRIVE
■ HIGH VOLTAGEFOR OFF-LINE
APPLICATIONS
■ 100 KHz SWITCHING SPEED
■ LOW COST DRIVE CIRCUITS
■ LOW DYNAMIC SATURATION
APPLICATIONS:
■ SWITCHMODEPOWER SUPPLIES
■ MOTORDRIVERS
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors are specially designed for high
reliabilityindustrial and professional power driving
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuitsat up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
BUF405AFP
NPN POWER TRANSISTORS
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Param et e r Val ue Uni t
BUF405A BUF405AFP
V
V
V
I
I
P
T
January 1999
Colle ct or-E mitt er Voltag e (VBE= -1.5 V) 1000 V
CEV
Colle ct or-E mitt er Voltag e (IB= 0 ) 450 V
CEO
Emitter-Base Voltage (IC=0) 7 V
EBO
I
Collector Current 7.5 A
C
Collector Peak Current ( tp<5ms) 15 A
CM
I
Base Current 3 A
B
Base Peak Current (tp<5ms) 4.5 A
BM
Tota l Dissipation at Tc=25oC8039W
tot
St orage Temperature -65 t o 150
stg
T
Max Operat io n J u nction Tempe r ature 150
j
o
C
o
C
1/6
BUF405A / BUF405AFP
THERMAL DATA
R
thj-case
Ther mal Resist an c e Junction-C ase Max 1.56 3.2
TO - 2 20 TO-220F P
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Mi n. Typ. Max. Un it
I
CER
I
CEV
I
EBO
V
CEO(sus )
Collec t or Cut -off
Current (R
BE
=5Ω)
Collec t or Cut -off
Current (I
B
=0)
Emitt er Cut-off Curren t
=0)
(I
C
∗ Collec t or -Emitter
V
CE=VCEV
VCE=V
V
V
V
CEVTc
CE=VCEVVBE
CE=VCEVVBE
=5V 1 mA
BE
=100oC
=-1.5V
=-1.5V Tc=100oC
0.1
0.5
0.1
0.5
IC= 20 0 mA L = 25 mH 450 V
Sust aining Volt age
V
V
CE(sat)
EBO
Emit ter Base V olt a ge
=0)
(I
C
∗ Co llector -Emitter
Saturation Voltage
V
∗ Ba se- Emitt er
BE(sat )
Saturation Voltage
di
/dt Rate of r is e on-state
c
Collec t or Curr ent
V
(3µs) Collector-Emitter
CE
Dynamic Voltage
V
(5µs) Collector-Emitter
CE
Dynamic Voltage
INDUCTI V E LOAD
t
t
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
INDUCTI V E LOAD
V
t
t
CEW
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
Maximum Collect or
Emitt er Voltage
without Snubber
INDUCTI V E LOAD
t
t
Storage Time
s
t
Fall Time
f
Cross Over T ime
c
I
=50mA 7 V
E
IC=2.5A IB=0.25A
=2.5A IB=0.25A Tc=100oC
I
C
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2.5A IB=0.25A
=2.5A IB=0.25A Tc=100oC
I
C
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
=300V RC=0 tp=3µs
V
CC
=0.375A Tj=25oC
I
B1
=0.375A Tj=100oC
I
B1
=1.5A Tj=100oC
I
B1
=300V RC=120Ω
V
CC
=0.375A Tj=25oC
I
B1
=300V RC=120Ω
V
CC
I
=0.375A Tj=25oC
B1
=100oC
T
j
=100oC
T
j
30
60
0.8
2.8
0.5
2
0.9
1.5
1.1
1.5
40 A/µs
2.1
8
1.1
4
IC=2.5A VCC=50V
=-5V RBB=2.4 Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH
0.8
0.05
0.08
IC=2.5A VCC=50V
=-5V RBB=2.4 Ω
V
BB
V
=400V IB1=0.25A
clamp
L=1mH T
=100oC
j
IC = 2.5 A VCC=50V
=-5V RBB=2.4 Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH T
=125oC
j
500 V
1.8
0.1
0.18
IC=2.5A VCC=50V
=0 RBB=0.6Ω
V
BB
=400V IB1=0.25A
V
clamp
L=1mH
1.5
0.04
0.07
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A/µs
A/µs
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6
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