SGS Thomson Microelectronics BSX20 Datasheet

HIGH SPEED SATURATED SWITCHES

DESCRIPTION

The BSX20 is a silicon planar epitaxial NPN
transistors in Jedec TO-18 metal case. They are
primarily intended for veeryhigh speed saturated
switchingapplications.

BSX20

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V
V

P

T

Collector-Base Voltage (IE=0) 40 V

CBO

Collector-Emitter Voltage (VBE=0) 40 V

CES

Collector-Emitter Voltage (IB=0) 15 V

CEO

Emitter-Base Voltage (IC=0) 4.5 V

EBO

Collect or Current (t = 10 µs) 0.5 A

I

C

Total Diss ipat ion at T

tot

Stora ge Tem per ature -65 t o 200

stg

Max. Op er at i ng Junct ion Temperat u r e 200

T

j

at T

amb
case

≤ 25oC

≤ 25oC

0.36

1.2

W
W

o

C

o

C

November 1997

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BSX20

THERMAL DATA

R

thj-case

R

thj- amb

Ther mal Resist ance Junc tion-Case Max
Thermal Resistance Junction-Ambient Max

146
486

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

I

CES

I

CEX

I

BEX

I

EBO

V

CER(sus )

Collector Cut-off
Current (I

E

=0)

Collector Cut-off
Current (V

BE

=0)

Collector Cut-off
Current (V

BE

=-3V)

Base C ut-o ff Current

=-3V)

(V

BE

Emit ter Cut-o f f C urr ent

=0)

(I

C

∗ Collec tor-Emitt er

=20V

V

CB

V

=20V T

CB

V

=15V T

CE

=40V

V

CE

V

=15V T

CE

V

=15V T

CE

V

= 4.5 V 10 µA

EB

I

=10mA 20 V

C

=150oC

amb

=55oC

amb

=55oC0.6µA

amb

=55oC0.6µA

amb

0.4
30

0.4

1

Sust aining V olt age

=10Ω)

(R

BE

V

(BR) CEO

∗ Collect or- E mitt er

I

=10mA 15 V

C

Break dow n Voltage

=0)

(I

B

V

∗ Collector-E m it t er

CE(sat)

Saturation Voltage

V

∗ Base-Emitt er

BE(sat )

Saturation Voltage

V

∗ Base-Emitt er O n

BE(on)

Volt age

∗ DC C ur rent G ain IC=10mA VCE=1V

h

FE

C

f

CBO

Tr ansition F r eque nc y IC=10mA VCE= 10 V 500 600 M Hz

T

Collector Base

IC=10mA IB=1mA

=100mA IB=10mA

I

C

=10mA IB=0.3mA

I

C

IC=10mA IB=1mA

=100mA IB=10mA

I

C

IC=30µAVCE=20V

= 100oC

T

amb

=100mA VCE=2V

I

C

I

=10mA VCE=1V

C

=-55oC

T

amb

IE=0 VCB=5V 4 pF

0.7 0.85

350 m V

40
20

20

0.25

0.6

0.3

1.5

60

Capacit a nc e

C

EBO

Emitt er Base

IC=0 VEB=1V 4.5 pF

Capacit a nc e

∗∗ Storage Tim e VCC=10V IC=10mA

t

s

∗∗ Turn-on T ime VCC=3V IC=10mA

t

on

t

∗∗ Turn-off Time VCC=3V IC=10mA

off

∗

Pulsed: Pulse duration = 300µs, duty cycle≤ 1%

∗∗ See test circuit

=-IB2=10mA

I

B1

I

=3mA

B1

=6V IC=100mA

V

CC

=40mA

I

B1

=3mA IB2=-1.5mA

I

B1

=6V IC=100mA

V

CC

=40mA IB2=-20mA

I

B1

613ns

12

7

18

21

µA
µA

µA
µA

V
V
V

V
V

ns

ns

ns

ns

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