SGS Thomson Microelectronics BSS63 Datasheet
SMALL SIGNAL PNP TRANSISTOR
Type Marking
BSS63 T3
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ GENERALPURPOSELOW FREQUENCY
APPLICATONS
■ NPNCOMPLEMENTIS BSS64
BSS63
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collector-Base Voltage (VBE= 0) -110 V
CBO
Collector-Emitter Voltage (IB= 0) -100 V
CEO
Emitter-Base Voltage (IC=0) -6 V
EBO
Collect or Cur rent -0. 1 A
I
C
Collect or P eak Current -0. 2 A
CM
Total Dissipation at Tc=25oC200mW
tot
Stora ge Temperature -65 to 150
stg
Max. Operat i ng Junction Temperatur e 150
T
j
o
C
o
C
March 1996
1/4
BSS63
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 15 x15 x 0.7mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junct ion-Subst rate Max
620
500
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CBO
CBO
EBO
Collector Cut-of f
Current (I
E
=0)
Emit ter Cut-o f f Curr ent
=0)
(I
C
∗ Collector- B ase
=-90V
V
CB
V
=-90V Tj=150oC
CB
V
= -5 V -200 nA
EB
I
=-10µA-110V
C
-100
-50
Break dow n V oltage
=0)
(I
E
V
∗ Collector- E mitter
(BR) CEO
I
= -10 mA -100 V
C
Break dow n V oltage
=0)
(I
B
V
(BR)EBO
Emitt er-Base
I
=-10µA-6V
E
Break dow n V oltage
=0)
(I
C
V
∗ Co llector-Em it t er
CE(sat)
Saturation Voltage
V
∗ Emitt er-Base
BE(sat)
IC=-25mA IB=-2.5mA
=-75mA IB=-7.5mA
I
C
IC=-25mA IB=-2.5mA -0.9 V
-0.25
-0.9
Saturation Voltage
∗ DC Cur rent Gain IC=-10mA VCE=-1V
h
FE
f
C
Tr ansition F r eque nc y IC=-25mA VCE= -5 V f = 100 MHz 50 MHz
T
Collector Base
CB
=-25mA VCE=-1V
I
C
IE=0mA VCB=-10V f=1MHz 3 pF
30
30
Capacit a nc e
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
nA
µA
V
V
2/4
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