SGS Thomson Microelectronics BSS44 Datasheet
®
■ STMicroelectronics P REF ERRED
SALESTYPE
■ PNP TRANSIS T OR
DESCRIPTION
The BSS44 is a silicon epitaxial planar PNP
transistor in Jedec TO-39 metal case. It is used
for high-current switching and power applications
up to 5 A.
BSS44
SILICON PNP TRANSISTOR
TO-39
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
P
T
Collector-Base Voltage (IE = 0) - 65 V
CBO
Collector-Emitter Voltage (IB = 0) - 60 V
CEO
Emitter-Base Voltage (IC = 0) - 6 V
EBO
Collector Current - 5 A
I
C
Total Dissipation at T
tot
T
Storage Temperature -65 to 200
stg
Max. Operating Junction Temperature 200
T
j
case
amb
≤ 25 oC
≤ 25 oC
5
0.87
W
W
o
C
o
C
November 1998
1/4
BSS44
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
V
(BR)CBO
Collector Cut-off
Current (V
∗
Collector-base
BE
=0)
= -60 V -0.5 µA
V
CE
= -1 mA -65 V
I
C
Breakdown Voltage
(I
= 0)
E
∗
V
CEO(sus)
Collector-Emitter
= -50 mA -60 V
I
C
Sustaining Voltage
(I
= 0)
B
∗
V
V
CE(sat)
EBO
Emitter-base Voltage
(I
= 0)
C
∗
Collector-Emitter
Saturation Voltage
BE(sat)
∗
Base-Emitter
V
Saturation Voltage
∗
C
h
FE
f
CBO
DC Current Gain IC = -0.5 A VCE = -2 V
∗
Transition Frequency IC = -0.5 A VCE = -5 V 80 MHz
T
Collector-base
Capacitance
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Turn-on Time IC = -0.5 A VCC = -20 V
on
Turn-off Time 0.45 µs
off
=.- 1 mA -6 V
I
E
IC = -0.5 A IB = -50 mA
I
= - 5 A IB = -0.5 A
C
IC = -0.5 A IB = -50 mA
I
= - 5 A IB = -0.5 A
C
-0.1
-0.4 -1
-0.8
-1. 1 -1.6
30
I
= -2 A VCE = -2 V
C
I
= -5 A VCE = -2 V
C
IE = 0 VCB = 10 V
40 70
45
100 pF
f = 1 MHz
0.065 µs
I
= -I
B1
= -50 mA
B2
V
V
V
V
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