SGS Thomson Microelectronics BD242BFP, BD241BFP Datasheet
BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ COMPLEMENTARYPNP - NPNDEVICES
■ FULLYMOLDED ISOLATEDPACKAGE
■ 2000V DC ISOLATION(U.L. COMPLIANT)
APPLICATIONS
■ GENERALPURPOSESWITCHING
■ GENERALPURPOSEAMPLIFIERS
3
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.
It is inteded for power linear and switching
applications.
The complementaryPNP types is the BD242BFP.
TO-220FP
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241BFP
PNP BD242BFP
V
V
V
I
P
T
For PNP types voltage and current values are negative.
Collect or- B as e Voltage (RBE=100Ω)90V
CER
Collector-Emitter Voltage ( IB=0) 80 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 3 A
I
C
Collect or Peak Current 5 A
CM
Base Current 1 A
I
B
Tot al Diss ipa t ion at Tc≤ 25oC24W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing Juncti on Tem per at u re 150
T
j
o
C
o
C
April 1998
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BD241BFP / BD242BFP
THERMAL DATA
R
thj-case
Ther mal Resistan ce J u nc t io n- case Max 5.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Mi n. Typ. Max. Unit
I
CEO
I
CES
I
EBO
V
CEO(sus)
Collector Cut- of f
Current (I
B
=0)
Collector Cut- of f
Current (V
BE
=0)
Emit ter Cut-o f f Current
(I
=0)
C
∗ Collector-Emitter
V
=60V 0.3 mA
CE
V
=80V 0.2 mA
CE
=5V 1 mA
V
EB
I
=30mA 80 V
C
Sust aining V olt ag e
=0)
(I
B
V
∗ Collector-Emitter
CE(sat)
IC=3A IB= 0.6 A 1.2 V
Saturation Voltage
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%
For PNP types voltage and current valuesare negative.
∗ Ba se-Emitt er Voltage IC=3A VCE=4V 1.8 V
BE(ON)
h
FE*
DC Current G ain IC=1A VCE=4V
=3A VCE=4V
I
C
25
10
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