Datasheet BD242A, BD242B, BD242C, BD241C, BD241B Datasheet (SGS Thomson Microelectronics)
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BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ COMPLEMEN TA RY PNP - NPN DEVI CES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
V
V
V
I
P
P
T
For PNP types voltage and current values are negative.
Collector-Base Voltage (RBE = 100 Ω) 70 90 115 V
CER
Collector-Emitter Voltage (IB = 0) 60 80 100 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 3 A
I
C
Collector Peak Current 5 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC40W
tot
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
≤ 25 oC2W
amb
o
C
o
C
June 1997
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BD241A/B/C /BD242A/ B/C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
= rated V
V
CE
for BD241A/BD242A V
for BD241B/BD242B V
for BD241C/BD242C V
= 5 V 1 mA
V
EB
CEO
= 30 V
CE
= 60 V
CE
= 60 V
CE
0.2 mA
0.3
0.3
0.3
IC = 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
IC = 3 A IB = 0.6 A 1.2 V
Saturation Voltage
∗ Base-Emitter Voltage IC = 3 A VCE = 4 V 1.8 V
V
BE
hFE∗ DC Current Gain IC = 1 A VCE = 4 V
I
= 3 A VCE = 4 V
C
h
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
Small Signal Current
fe
Gain
IC = 0.5 A VCE = 10 V f = 1MHz
I
= 0.5 A VCE = 10 V f = 1KHz320
C
25
10
mA
mA
mA
V
V
V
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E
TO-220 MECHANICAL DATA
BD241A/B/C/BD242A/B/C
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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BD241A/B/C/BD242A/B/C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or ot h erwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifi cations mentioned
in this publication are subject to change without notice. This publication sup ersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
. . .
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