SGS Thomson Microelectronics BCY79 Datasheet

LOW NOISE AUDIO AMPLIFIERS

DESCRIPTION

The BCY79 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. They are
designed for use in audio driver and low-noise
input stages.

The complementaryNPN typeis the BCY59.

BCY79

TO-18

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V

I
P

T

Collector-Emitter Voltage (VBE=0) -45 V

CES

Collector-Emitter Voltage (IB=0) -45 V

CEO

Emitter-Base Voltage (IC=0) -5 V

EBO

Collect or Curr ent -200 mA

I

C

Collect or Peak Current -20 mA

CM

Total Dissipati on at T

tot

Stora ge Tem per at u re -65 to 150

stg

Max. Operating Junction Temperat u r e 150

T

j

at T

amb
case

≤ 25oC

≤ 45oC

390

1

mW

W

o

C

o

C

November 1997

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BCY79

THERMAL DATA

R

thj-case

R

thj- amb

Ther mal Resist ance Junct ion-Case Max
Thermal Resistance Junction-Ambient Max

150
450

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CES

I

CEX

I

EBO

V

(BR)CES

Collector Cut-off
Current (V

BE

Collector Cut-off
Current (V

BE

Emit ter Cut - o f f Current

=0)

(I

C

∗ Co llector- Emitt er

=0)

=-2V)

=-35V

V

CE

V

=-45V

CE

=-35V T

V

CE

V

=-45V T

CE

V

=-4V -20 nA

EB

I

=-10µA-45V

C

= 150oC

amb

= 100oC-20µA

amb

-2 -20

-100

-10

Break dow n Voltage

=0)

(V

BE

V

∗ Collect or- E mitt er

(BR) CEO

I

=-2mA -45 V

C

Break dow n Voltage

=0)

(I

B

V

(BR)EBO

Emitt er-Base

I

=-1µA-5V

E

Break dow n Voltage

=0)

(I

C

V

∗ Collector-Emitt er

CE(sat)

Saturation Voltage

V

∗ Collector-Base

BE(sat )

Saturation Voltage

V

∗ Base-Emitt er O n

BE(on)

Volt age

h

∗ DC Current Gain IC=-10µAVCE=-5V

FE

IC=-10mA IB=-0.25mA

=-100mA IB=-2.5mA

I

C

IC=-10mA IB=-0.25mA

=-100mA IB=-2.5mA

I

C

IC=-10µAVCE=-5V
I

=-2mA VCE=-5V

C

=-10mA VCE=-1V

I

C

I

=-100mA VCE=-1V

C

Gr. VII
Gr. VIII
Gr. IX

=-2mA VCE=-5V

I

C

Gr. VII
Gr. VIII
Gr. IX

=-10mA VCE=-1V

I

C

Gr. VII
Gr. VIII
Gr. IX

=-100mA VCE=-1V

I

C

Gr. VII
Gr. VIII
Gr. IX

∗ Small Signal Current

h

fe

Gain

IC=-2mA VCE=-5V f=1KHz
Gr. VII
Gr. VIII
Gr. IX

∗

Pulsed: Pulse duration = 300µs, duty cycle ≤ 2%

-0.6

-0.7

-0.6

30
40

120
180
250

80
120
160

40

45

60

125
175
250

-0.12

-0.4

-0.7

-0.85

-0.55

-0.65

-0.68

-0.75

140
200
270

170
250
350

180
260
360

200
260
330

-0.25

-0.8

-0.85

-1.2

-0.75

220
310
460

400
630

250
350
500

nA
nA
µA

V
V

V
V

V
V
V
V

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