DESCRI PTIO N
The BCY58and BCY59are silicon planar epitaxial
NPN transistorsin Jedec TO-18 metal case.
They are intended for use in audio input stages,
driverstagesand low-noise inputstages.The complementary PNP types are respectively the BCY78
and BCY79.
BCY 58
BCY59
LOWNOISE AUDIO AMPLIFIERS
TO-18
INTERN AL SCHEMAT IC DI AGR AM
ABSOLUTE M AXI MUM RAT IN GS
Symbol Parameter
V
CES
V
CEO
V
EBO
I
I
P
T
stg,Tj
C
B
tot
Collector-emitter Voltage (VBE=0) 32 45 V
Collector-emitter Voltage (IB=0) 32 45 V
Emitter-base Voltage (IC=0) 7 V
Collector Current 200 mA
Base Current 50 mA
Total Power Dissipation at T
Storage and Junction Temperature – 65 to 200 °C
at T
amb
case
≤ 25 °C
≤ 45 °C
Value
BCY58 BCY59
0.39
1
Unit
mW
W
January 1989
1/6
BCY58-BCY59
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
150
450
°C/W
°C/W
Symbol Paramete r Test Conditions Mi n. Typ. Max. Unit
I
CE S
Collector Cutoff Current
(V
=0) ForBCY58
BE
VCE=32V
V
=32V
CE
T
amb
=150°C
0.1
0.1
10
10
For BCY59
10
10
I
CE X
Collector Cutoff Current
VCE=45V
V
=45V
CE
T
amb
=150°C
0.1
0.1
(VBE= – 0.2 V) For BCY58
VCE=32V
T
amb
=100°C
20
For BCY59
I
EBO
Emitter cutoff Current
V
=45V
CE
VEB=5V 10 nA
T
amb
=100°C
20
(IC=0)
V
(BR)CEO
(BR)EBO
V
V
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
* Collector-emitter Breakdown
Voltage (IB=0)
* Emitter-base Breakdown Voltage
(I
=0)
C
* Collector-Emitter Saturation
CE(sat)
Voltage
V
BE
BE(sat
h
FE
Base-emitter Voltage IC=2mA
)* Base-emitter Saturation Voltage IC=10mA
* DC Current Gain IC=10 µA
IC= 2 mA For BCY58
For BCY59
=10µA7V
I
E
IC=10mA
I
=100mA
C
= 0.25 mA
I
B
I
= 2.5 mA
B
VCE=5V
IC=100mA
VCE=1V
IB= 0.25 mA
IC=100mA
IB= 2.5 mA
=5V
V
CE
Gr.VII
Gr.VIII
Gr.IX
Gr.X
=2mA
I
C
V
=5V
CE
Gr.VII
Gr.VIII
Gr.IX
Gr.X
=10 mA
I
C
V
=1V
CE
Gr.VII
Gr.VIII
Gr.IX
Gr.X
=100 mA
I
C
V
=1 V
CE
Gr.VII
Gr.VIII
Gr.IX
Gr.X
32
45
0.12
0.4
0.55 0.65
0.75
0.6
0.75
0.7
0.9
195
100
140
20
195
40
80
80
280
350
170
250
350
500
365
175
260
365
520
100
120
120
180
250
380
120
160
240
40
40
45
60
60
0.35
0.7
0.7 V
0.85
1.2
630
220
310
460
630
nA
µA
nA
µA
µA
µA
V
V
V
V
V
V
V
2/6
BCY5 8-BCY59
ELECTRICAL CHARACTERISTICS (continued)
Symbol Paramete r Test Conditions Mi n. Typ. Max. Unit
h
fe
f
T
C
EBO
C
CBO
NF Noise Figure I
t
on
t
off
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Small Signal Current Gain IC=2mA
f = 1 kHz
Transition Frequency IC=10 mA
f = 100 MHz
Emitter-base Capacitance IC=0
f=1MHz
Collector-base Capacitance IE=0
f=1MHz
= 0.2 mA
C
Rg=2kΩ
Turn-on Time IC=10mA
IB1=1mA
IC=100mA
I
=10mA
B1
Turn-off Time IC=10mA
IB1=–IB2=1
IC=100mA
I
=–IB2=10
B1
VCE=5V
125
Gr.VII
Gr.VIII
Gr.IX
Gr.X
125
175
250
350
250
350
500
700
VCE=5V
200 MHz
VEB= 0.5 V
11 15 pF
VCB=10V
3.5 6 pF
VCE=5V
f = 1 kHz 2 6 dB
=10V
V
CC
8555150
VCC=10V
150nsns
=10V
V
CC
mA
480
800
VCC=10V
mA
480
800nsns
DC Current Gain. Collector-emitter Saturation Voltage.
3/6
BCY58-BCY59
Transition Frequency. Collector-base Capacitance.
Noise Figure (f = 100 Hz). NoiseFigure (f = 1 kHz).
Noise Figure (f = 10 kHz). Noise Figure vs. Frequency.
4/6
TO-18 MECHANICAL DATA
BCY5 8-BCY59
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
G
I
H
DA
F
E
L
B
C
0016043
5/6
BCY58-BCY59
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder anypatent or patent rights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to changewithout notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse as criticalcomponentsin lifesupportdevices orsystems withoutexpress
written approval of SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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6/6
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