SGS Thomson Microelectronics BCX17 Datasheet
®
SMALL SIGNAL PNP TRANSISTOR
Type Marking
BCX17 T1
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE M ENT A RY TY P E IS
BCX19
BCX17
PRELIMINARY DATA
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
SOT-23
EQUIPM ENT
■ SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) -50 V
CBO
Collector-Emitter Voltage (IB = 0) -45 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -0.5 A
C
Collector Peak Current -1 A
CM
Total Dissipation at TC = 25 oC 250 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 2002
1/4
BCX17
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm2.
• Thermal Resistance Junction-Ambient Max 500
thj-amb
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Base
= -20 V
V
CB
V
= -20 V TC = 150 oC
CB
= -5 V -100 nA
V
EB
= -10 µA
I
C
-50 V
-100-5nA
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= -10 mA -45 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = -500 mA IB = -50 mA -0.62 V
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = -500 mA VCE = -1 V -1.2 V
Voltage
h
∗ DC Current Gain IC = -100 mA VCE = -1 V
FE
f
C
CBO
Transition Frequency IC = -10mA VCE = -5 V f = 100MHz 80 MHz
T
Collector-Base
I
= -300 mA VCE = -1 V
C
I
= -500 mA VCE = -1 V
C
IE = 0 mA VCB = -10 V f = 1MHz 9 pF
100
70
40
600
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
µA
2/4
Loading...