SGS Thomson Microelectronics BCW66 Datasheet
SMALL SIGNAL NPN TRANSISTORS
Type Marking
BCW 66F EF
BCW 66G EG
BCW66H EH
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■ PNP COMPLEMENTIS BCW68
BCW66
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 75 V
CES
Collector-Emitter Voltage (IB=0) 45 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 0.8 A
I
C
Collect or Pea k Curr ent 1 A
CM
Base Current 0.1 A
I
B
Tot al Dissipation at Tc=25oC 360 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
October 1997
1/4
BCW66
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 0.7 mm x2.5 cm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
375
278
2
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CES
EBO
Collector Cut -off
Current (V
BE
=0)
Collector Cut -off
Current (I
E
=0)
∗ Collector- E mitter
=RatedV
V
CE
VCE=RatedV
V
=4V 20 nA
EB
I
=10mA 45
C
CES
CES
T
amb
= 150oC
20
20
Break dow n Voltage
=0)
(I
B
V
(BR)CES
∗ Collector-Em it t er
I
=10µA75
C
Break dow n Voltage
=0)
(V
EB
V
(BR)EBO
Emitt er-Base
I
=10µA5V
C
Break dow n Voltage
=0)
(I
C
V
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
∗ Collector-Bas e
BE(sat)
Saturation Voltage
h
∗ DC Current G ain IC=0.1mA VCE=10V
FE
IC=100mA IB=10mA
I
=500mA IB=50mA
C
IC=100mA IB=10mA
=500mA IB=50mA
I
C
for groupF
for groupG
for groupH
=10mA VCE=1V
I
C
for groupF
for groupG
for groupH
=100mA VCE=1V
I
C
for groupF
for groupG
for groupH
=500mA VCE=2V
I
C
for groupF
for groupG
for groupH
f
C
Tr ansition Frequency IC=20mA VCE= 10V f = 100MHz 100 MHz
T
CB
Collector B ase
IE=0 VCB= 10 V f = 1 MHz 12 pF
35
50
80
75
110
180
100
160
250
35
60
100
0.3
0.7
1.25
2
250
400
630
Capacit a nc e
EB
Emitt er Base
C
IC=0 VCE=0.5V f=1MHz 80 pF
Capacit a nc e
NF No ise Figure V
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Switching On Time IC=150mA IB1=-IB2=15 mA
on
=5V IC=0.2mA f=1KHz
CE
∆f = 200 Hz R
=150Ω
R
L
=2KΩ
G
210dB
100 ns
nA
µA
V
V
V
V
V
V
V
V
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