SMALL SIGNAL NPN TRANSISTORS
Type Marking
BCW 66F EF
BCW 66G EG
BCW66H EH
■ SILICONEPITAXIALPLANARNPN
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING
CIRCUITS
■ MEDIUMCURRENT AFAMPLIFICATION
ANDSWITCHING
■ PNP COMPLEMENTIS BCW68
BCW66
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
P
T
Collector-Emitter Voltage (VBE=0) 75 V
CES
Collector-Emitter Voltage (IB=0) 45 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 0.8 A
I
C
Collect or Pea k Curr ent 1 A
CM
Base Current 0.1 A
I
B
Tot al Dissipation at Tc=25oC 360 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
October 1997
1/4
BCW66
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 0.7 mm x2.5 cm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junc t io n-S ubstrat e Max
375
278
2
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CES
EBO
Collector Cut -off
Current (V
BE
=0)
Collector Cut -off
Current (I
E
=0)
∗ Collector- E mitter
=RatedV
V
CE
VCE=RatedV
V
=4V 20 nA
EB
I
=10mA 45
C
CES
CES
T
amb
= 150oC
20
20
Break dow n Voltage
=0)
(I
B
V
(BR)CES
∗ Collector-Em it t er
I
=10µA75
C
Break dow n Voltage
=0)
(V
EB
V
(BR)EBO
Emitt er-Base
I
=10µA5V
C
Break dow n Voltage
=0)
(I
C
V
V
∗ Collector-Em it t er
CE(sat)
Saturation Voltage
∗ Collector-Bas e
BE(sat)
Saturation Voltage
h
∗ DC Current G ain IC=0.1mA VCE=10V
FE
IC=100mA IB=10mA
I
=500mA IB=50mA
C
IC=100mA IB=10mA
=500mA IB=50mA
I
C
for groupF
for groupG
for groupH
=10mA VCE=1V
I
C
for groupF
for groupG
for groupH
=100mA VCE=1V
I
C
for groupF
for groupG
for groupH
=500mA VCE=2V
I
C
for groupF
for groupG
for groupH
f
C
Tr ansition Frequency IC=20mA VCE= 10V f = 100MHz 100 MHz
T
CB
Collector B ase
IE=0 VCB= 10 V f = 1 MHz 12 pF
35
50
80
75
110
180
100
160
250
35
60
100
0.3
0.7
1.25
2
250
400
630
Capacit a nc e
EB
Emitt er Base
C
IC=0 VCE=0.5V f=1MHz 80 pF
Capacit a nc e
NF No ise Figure V
t
∗
Pulsed: Pulse duration = 300 µs,duty cycle≤ 2%
Switching On Time IC=150mA IB1=-IB2=15 mA
on
=5V IC=0.2mA f=1KHz
CE
∆f = 200 Hz R
=150Ω
R
L
=2KΩ
G
210dB
100 ns
nA
µA
V
V
V
V
V
V
V
V
2/4
SOT-23 MECHANICAL DATA
BCW66
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
0044616/B
3/4
BCW66
Information furnished is believedto be accurateand reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor otherrights of third parties which may results from its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for useas critical components inlifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea- Malaysia - Malta- Morocco- The Netherlands -
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
4/4
Loading...