SGS Thomson Microelectronics BCW66 Datasheet

SMALL SIGNAL NPN TRANSISTORS
Type Marking
BCW 66F EF BCW 66G EG BCW66H EH
SILICONEPITAXIALPLANARNPN
TRANSISTORS
MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACEMOUNTING CIRCUITS
MEDIUMCURRENT AFAMPLIFICATION
PNP COMPLEMENTIS BCW68
BCW66
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V V V
I
P
T
Collector-Emitter Voltage (VBE=0) 75 V
CES
Collector-Emitter Voltage (IB=0) 45 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 0.8 A
I
C
Collect or Pea k Curr ent 1 A
CM
Base Current 0.1 A
I
B
Tot al Dissipation at Tc=25oC 360 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating J unc tion Tem per ature 150
T
j
o
C
o
C
October 1997
1/4
BCW66
THERMAL DATA
R
thj-amb
R
thj-SR
Mounted on a ceramic substrate area = 0.7 mm x2.5 cm
Thermal Resistance Junction-Ambient Max
Ther mal Resistance Junc t io n-S ubstrat e Max
375 278
2
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
I
V
(BR) CEO
CES
EBO
Collector Cut -off Current (V
BE
=0)
Collector Cut -off Current (I
E
=0)
Collector- E mitter
=RatedV
V
CE
VCE=RatedV V
=4V 20 nA
EB
I
=10mA 45
C
CES CES
T
amb
= 150oC
20 20
Break dow n Voltage
=0)
(I
B
V
(BR)CES
Collector-Em it t er
I
=10µA75
C
Break dow n Voltage
=0)
(V
EB
V
(BR)EBO
Emitt er-Base
I
=10µA5V
C
Break dow n Voltage
=0)
(I
C
V
V
Collector-Em it t er
CE(sat)
Saturation Voltage
Collector-Bas e
BE(sat)
Saturation Voltage
h
DC Current G ain IC=0.1mA VCE=10V
FE
IC=100mA IB=10mA I
=500mA IB=50mA
C
IC=100mA IB=10mA
=500mA IB=50mA
I
C
for groupF for groupG for groupH
=10mA VCE=1V
I
C
for groupF for groupG for groupH
=100mA VCE=1V
I
C
for groupF for groupG for groupH
=500mA VCE=2V
I
C
for groupF for groupG for groupH
f
C
Tr ansition Frequency IC=20mA VCE= 10V f = 100MHz 100 MHz
T
CB
Collector B ase
IE=0 VCB= 10 V f = 1 MHz 12 pF
35 50 80
75 110 180
100 160 250
35
60 100
0.3
0.7
1.25 2
250 400 630
Capacit a nc e
EB
Emitt er Base
C
IC=0 VCE=0.5V f=1MHz 80 pF
Capacit a nc e
NF No ise Figure V
t
Pulsed: Pulse duration = 300 µs,duty cycle2%
Switching On Time IC=150mA IB1=-IB2=15 mA
on
=5V IC=0.2mA f=1KHz
CE
f = 200 Hz R
=150
R
L
=2K
G
210dB
100 ns
nA µA
V V
V V
V V
V V
2/4
Loading...
+ 2 hidden pages