SGS Thomson Microelectronics BC807-40, BC807-25 Datasheet
BC807-25
®
SMALL SIGNAL PNP TRANSIS TORS
Type Marking
BC807-25 5B
BC807-40 5C
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTORS
■ MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE MENT A RY T YP ES ARE
BC817-25 AND BC817-40 RESPECT I VEL Y
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
EQUIPM ENT
■ SMALL LOAD SWITCH TRANSISTORS
WITH HIGH GAIN AND LO W SA TUR ATION
VOLTAG E
BC807-40
PRELIMINARY DATA
SOT-23
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
September 2002
Collector-Base Voltage (IE = 0) -50 V
CBO
Collector-Emitter Voltage (IB = 0) -45 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -0.5 A
I
C
Collector Peak Current -1 A
CM
Total Dissipation at TC = 25 oC 250 mW
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
1/4
BC807-25 / BC807-40
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 500
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= -20 V
V
CB
V
= -20 V TC = 150oC
CB
= -5 V -100 nA
V
EB
I
= -10 mA -45 V
C
-100-5nA
Breakdown Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
IC = -500 mA IB = -50 mA -0.7 V
Saturation Voltage
V
∗ Base-Emitter On
BE(on)
IC = -500 mA VCE = -1 V -1.2 V
Voltage
h
∗ DC Current Gain IC = -100 mA VCE = -1 V
FE
f
C
CBO
Transition Frequency IC = -10 mA VCE = -5 V f =100 MHz 80 MHz
T
Collector-Base
for BC807-25
for BC807-40
160
250
400
600
IE = 0 VCB = -10 V f = 1 MHz 9 pF
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
µA
2/4
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