SGS Thomson Microelectronics BC636-AP, BC636 Datasheet

BC636
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
TO-92 PACKAGE SUITABLE FOR
THROU GH-HOLE PCB ASSEMBLY
BC635
APPLICATIONS
WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION VOLTAGE
®
INTER NAL SCH E M ATI C DIAG RA M
February 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CER
Collector-Emitter Voltage (RBE = 1K)
-45 V
V
CEO
Collector-Emitter Voltage (IB = 0) -45 V
V
CES
Collector-Emitter Voltage (VBE = 0) -45 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -1 A
I
CM
Collector Peak Current -1.5 A
P
tot
Total Dissipation at T
amb
= 25 oC1W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
Ordering Code Marking Package / Shipment
BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 / Ammopack
TO-92
Bulk
TO-92
Ammopack
1/5
THERMAL DATA
R
thj-amb
R
thj-Case
Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max
125
83.3
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off Current (I
E
= 0)
V
CB
= -30 V -0.1 µA
I
EBO
Emitter Cut-off Current (I
C
= 0)
V
EB
= -5 V -0.1 µA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage (I
B
= 0)
I
C
= -10 mA -45 V
V
CE(sat)
Collector-Emitter
Saturation Voltage
IC = -500 mA IB = -50 mA -0.5 V
V
V
BE(on)
Base-Emitter On
Voltage
IC = -500 mA VCE = -2 V -1 V
h
FE
DC Current Gain IC = -5 mA VCE = -2 V
I
C
= -150 mA VCE = -2 V
I
C
= -500 mA VCE = -2 V
25 40 25
250
f
T
Transition Frequency IC = -10 mA VCE = -5 V f = 50MHz 100 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
BC636
2/5
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105
e1 1.14 1.40 0.045 0.055
L 12.70 15.49 0.500 0.609
R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022
V 4 degree 6 degree 4 degree 6 degree
TO-92 MECHANICA L DAT A
BC636
3/5
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A1 4.80 0.189
T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091
d 0.48 0.019 P0 12.50 12.70 12.90 0.492 0.500 0.508 P2 5.65 6.35 7.05 0.222 0.250 0.278
F1,F2 2.44 2.54 2.94 0.096 0.100 0.116
delta H -2.00 2.00 -0.079 0.079
W 17.50 18.00 19.00 0.689 0.709 0.748
W0 5.70 6.00 6.30 0.224 0.236 0.248 W1 8.50 9.00 9.25 0.335 0.354 0.364 W2 0.50 0.020
H 18.50 20.50 0.728 0.807 H0 15.50 16.00 16.50 0.610 0.630 0.650 H1 25.00 0.984 D0 3.80 4.00 4.20 0.150 0.157 0.165
t 0.90 0.035 L 11.00 0.433 I1 3.00 0.118
delta P -1.00 1.00 -0.039 0.039
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
BC636
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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BC636
5/5
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