SGS Thomson Microelectronics 74V2GU04STR, 74V2GU04CTR Datasheet

1/7June 2003

■ HIGH SPEED: t

PD

= 3.5ns (TYP.) at VCC=5V

■ LOW POWER DISSIPATION:

I

CC

=1µA(MAX.) atTA=25°C

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

= 10% VCC(MIN.)

■ POWER DOWN PROTECTION ON INPUT

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

|=IOL=8mA(MIN)atVCC=4.5V

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ OPERATING VOLTAGE RANG E:

V

CC

(OPR) = 2V to 5.5V

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2GU04 is an advanced high-speed CMOS TRIPLE INVERTER (SINGLE STAGE) fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. The internal circuit is composed of a single stages inverter, then an unbuffered output.

It can be used in analog application such a crystal oscillator. Power down protection is provided on input and 0 to 7V can be accepted on input with no rega rd to the supply voltage. This device can be used to interface5Vto3V.

74V2GU04

TRIPLE INVERTER (SINGLE STAGE)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2GU04STR

SOT323-8LSOT23-8LSOT23-8L

74V2GU04

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

RECOMMENDED OPERATING CONDITIONS

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs 7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V) 8

V

CC

Positive Supply Voltage

AY

LH

HL

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7.0 V

V

I

DC Input Voltage

-0.5 to +7.0 V

V

O

DC Output Voltage -0.5 to VCC+ 0.5

V

I

IK

DC Input Diode Current

-20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 25 mA

I

CC

or I

GND

DC VCCor Ground Current

± 50 mA

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

260 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 5.5 V

V

I

Input Voltage

0 to 5.5 V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

74V2GU04

3/7

DC SPECIFICATIONS

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

(*) Voltage range is3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V

CAPACITIVE CHARACTERISTICS

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input Voltage

2.0 1.7 1.7 1.7 V

3.0to

5.5

0.8V

CC

0.8V

CC

0.8V

CC

V

IL

Low Level Input Voltage

2.0 0.3 0.3 0.3 V

3.0to

5.5

0.2V

CC

0.2V

CC

0.2V

CC

V

OH

High Level Output Voltage

2.0

IO=-50 µA

1.8 2.0 1.8 1.8

V

3.0

I

O

=-50 µA

2.7 3.0 2.7 2.7

4.5

I

O

=-50 µA

4.0 4.5 4.0 4.0

3.0

I

O

=-4 mA

2.58 2.48 2.4

4.5

I

O

=-8 mA

3.94 3.8 3.7

V

OL

Low Level Output Voltage

2.0

IO=50 µA

0.0 0.2 0.2 0.2

V

3.0

I

O

=50 µA

0.0 0.3 0.3 0.3

4.5

I

O

=50 µA

0.0 0.5 0.5 0.5

3.0

I

O

=4 mA

0.36 0.44 0.55

4.5

I

O

=8 mA

0.36 0.44 0.55

I

Input Leakage Current

0to

5.5

V

I

= 5.5V or GND

± 0.1 ± 1 ± 1 µA

I

CC

Quiescent Supply Current

5.5

V

I=VCC

or GND

11020µA

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

C

L

(pF)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

t

PLHtPHL

Propagation Delay Time

3.3

(*)

15 4.4 6.5 1.0 8.0 1.0 9.0

ns

3.3

(*)

50 4.8 7.0 1.0 9.0 1.0 10.0

5.0

(**)

15 3.5 5.5 1.0 6.0 1.0 7.5

5.0

(**)

50 4.1 6.0 1.0 7.0 1.0 8.0

Symbol Parameter

Test Condition Value

Unit

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

C

IN

Input Capacitance

510 10 10pF

C

PD

Power Dissipation Capacitance (note 1)

10 pF