.850 - 960 MHZ
.24 VOLTS
.COMMON EMITTER
.O VERLAY GEOMETRY
.GOLD METALLIZATION
.P
OUT
6.0 W MIN. WITH 10.0 dB GAIN
=
SD1398
RF & MICROWAVE TRANSISTORS
850-96 0 MHz APPLICAT IONS
.230 6LF L (M142)
epoxy sealed
ORDER CODE
SD1398
PIN CONNECTION
BRANDING
SD1398
DESC RIPTION
The SD1398 is a gold metallized epitaxial silicon
NPN transistor designed for high linearity Class
AB operation cellular base station applications. The
SD1398 can also be operated Class C.
The SD1398 is internally input matched and can
be used as a driver for the SD1423 or SD1424.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 50 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 3.5 V
Device Current 2.4 A
Power Dissipation 53 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 3.3 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
September 8, 1993
1/6
SD1398
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CBO
h
FE
= 5mA IE= 0mA 50 — — V
= 5mA IB= 0mA 24 — — V
= 5mA IC= 0mA 3.5 — — V
VCE= 24V IE= 0mA — — 1.0 mA
VCB= 24V IE= 0mA — — 1.0 mA
VCE= 10V IC= 0.1A 20 — 100 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
η
cf=850 — 960 MHz VCE= 24 V ICQ= 25 mA — 50 — %
G
C
OB
Note: P
f = 850 — 960 MHz VCE= 24 V ICQ= 25 mA 6 — — W
f = 850 — 960 MHz VCE= 24 V ICQ= 25 mA 10 12 — dB
P
f = 1 MHz VCB= 24 V — 7.5 8.5 pF
0.60w
=
IN
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
CLASS AB BROADBAND OUTPUT POWER
vs INPUT POWER OUTPUT POWER vs INPUT POWER
2/6
IMPEDA NCE DATA
Z
IN
900 MHz
SD1398
Z
CL
850 MHz
960 MHz
960 MHz
FREQ. ZIN(Ω)ZCL(Ω)
850 MHz 2.6 + j 5.4 9.5 + j 13.5
900 MHz 3.3 + j 6.1 9.9 + j 15.0
950 MHz 4.6 + j 5.9 8.6 + j 13.0
850 MHz
900 MHz
3/6
SD1398
TEST CIRCUIT
C1, C2
C7, C11 : 240pF ATC Size A
C3 : 0.1MFD 50Vdc, CK05 Type
C4, C5 : 1500pFFeedthru #9900-381-6004 Murata/Erie
C6, C10 : 0.8 - 8.0pF Johanson Gigatrim
C8 : 0.01 MFD 100Vdc CK05 Type
C9 : 10MFD Electrolytic, 63Vdc
D1 : IN5661
4/6
FB-1,
FB-2 : 2.5 Turns, #22 AWG, Ferrite Bead
FB-3 : Ferrite Bead L1 Cold End
L1 : 3 Turns, #22 AWG, 0.125” I.D.
R1 : 150Ωin 5% Carbon Comp
R2 : 51Ω, Chip Resistor
Board
Material: Er=10.2, Height 0.05”, Teflon Glass
TEST CIRC UIT L AYO UT
SD1398
5/6
SD1398
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0142
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor forany infringement of patents or other rights of third parties which mayresults from its use. No
license isgranted byimplication orotherwise underany patent orpatent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to change without notice. Thispublication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized foruse ascritical componentsinlife supportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France- Germany - HongKong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
6/6
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