SGS Thomson Microelectronics 2N5323, 2N5322 Datasheet
SMALL SIGNAL PNP TRANSISTORS
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTORS
■ MEDIUM POWER AMPLIFIER
■ NPN COMPLEMENT S ARE 2N5320 AND
2N5321
DESCRIPTION
The 2N5322 and 2N5323 are silicon epitaxial
planar PNP transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
The complementary NPN types are respectively
the 2N5320 and 2N5321
2N5322
2N5323
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N5322 2N5323
V
V
V
V
I
P
P
T
stg
Collector-Base Voltage (IE = 0) -100 -75 V
CBO
Collector-Emitter Voltage (VBE = -1.5V) -100 -75 V
CEV
Collector-Emitter Voltage (IB = 0) -75 -50 V
CEO
Emitter-Base Voltage (IC = 0) -6 -5 V
EBO
Collector Current -1.2 A
I
C
Collector Peak Current -2 A
CM
Base Current -1 A
I
B
Total Dissipation at T
tot
Total Dissipation at Tc = 25 oC10W
tot
, TjStorage and Junction Temperature -65 to 200
= 25 oC1W
amb
o
C
June 1997
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2N5322/2N5323
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
17.5
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEV
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
h
BE
FE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (I
= 0)
C
Collector-Emitter
Breakdown Voltage
(V
= 1.5V)
BE
∗ Collector-Emitter
Breakdown Voltage
(I
= 0)
B
Emitter-Base
Breakdown Voltage
(I
= 0)
C
∗ Collector-Emitter
Saturation Voltage
= -80 V for 2N5322
V
CB
V
= -60 V for 2N5323
CB
= -5 V for 2N5322
V
EB
V
= -4 V for 2N5323
EB
= -100 µA
I
C
for 2N5322
for 2N5323
I
= -10 mA
C
for 2N5322
for 2N5323
= -100 µA
I
E
for 2N5322
for 2N5323
IC = -500 mA IB = -50 mA
for 2N5322
for 2N5323
∗ Base-Emitter Voltage IC = -500 mA VCE = -4 V
for 2N5322
for 2N5323
∗ DC Current Gain for 2N5322
I
= -500 mA VCE = -4 V
C
I
= -1 A VCE = -2 V
C
-100
-75
-75
-50
-6
-5
30
10
-0.5
-5
-0.1
-0.5
-0.7
-1.2
-1.1
-1.4
130
for 2N5323
I
f
t
Transition Frequency IC = -50 mA VCE = -4 V f = 10 MHz 50 MHz
T
Turn-on Time IC = -500 mA VCC = -30 V
on
I
t
Turn-off Time IC = -500 mA VCC = -30 V
off
I
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1 %
= -500 mA VCE = -4 V
C
= -50 mA
B1
= -IB2 = -50 mA
B1
40
250
100 ns
1000 ns
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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