SGS Thomson Microelectronics 2N5192, 2N5191 Datasheet
MEDIUM POWER NPN SILICON TRANSISTORS
■ SGS-THOMS O N PREF ERRE D SA LES TYP E S
■ NPN TRANSISTOR
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5191 and 2N5192 are silicon
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
SOT-32
2N5191
2N5192
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
2N5191 2N5192 Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 60 80 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 4 A
I
C
Collector Peak Current 7 A
CM
Base Current 1 A
I
B
Total Dissipation at Tc ≤ 25 oC40W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
June 1997
1/4
2N5191 / 2N5192
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CEX
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE
Collector Cut-off
Current (I
= 0)
E
Collector Cut-off
Current (V
= -1.5V)
BE
Collector Cut-off
Current (I
= 0)
B
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
Saturation Voltage
= rated V
V
CB
= rated V
V
CE
VCE = rated V
= rated V
V
CE
= 5 V 1 mA
V
EB
CBO
CEO
Tc = 125 oC
CEO
CEO
0.1 mA
0.1
2
1mA
IC = 100 mA
for 2N5191
for 2N5192
IC = 1.5 A IB = 0.15 A
I
= 4 A IB = 1 A
C
60
80
0.6
1.4
∗ Base-Emitter Voltage IC = 1.5 A VCE = 2 V 1.2 V
hFE∗ DC Current Gain IC = 1.5 A VCE = 2 V
for 2N5191
for 2N5192
I
for 2N5191
for 2N5192
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Transition frequency IC = 1 A VCE = 10 V 2 MHz
T
= 4 A VCE = 2 V
C
25
20
10
7
100
80
mA
mA
V
V
V
V
2/4
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