SGS Thomson Microelectronics 2N2369A Datasheet
HIGH-SPEED SATURATED SWITCH
DESCRIPTION
The 2N2369A isa silicon planar epitaxialNPN transistorinJedecTO-18metalcase.Itisdesigned specificallyfor high-speed saturated switching applications at current levels from 100 µA to 100mA.
2N2369A
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Paramet e r Val ue Unit
V
CB O
V
CE S
V
CE O
V
EBO
I
C
I
CM
P
tot
T
stg,Tj
November1988
Collector-base Voltage (IE=0) 40 V
Collector-emitter Voltage (VBE=0) 40 V
Collector-emitter Voltage (IB=0) 15 V
Emitter-base Voltage (IC= 0) 4.5 V
Collector Current 0.2 A
Collector Current (10 µs pulse) 0.5 A
Total Power Dissipation at T
at T
at T
Storage and Junction Temperature – 65 to 200 °C
amb
case
case
≤ 25 °C
≤ 25 °C
≤ 100 °C
0.36
1.2
0.68
W
W
W
1/6
2N2369A
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unlessotherwise specified)
146
486
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
CES
V
(BR) CBO
V
(BR)CES
V
(BR)CEO
V
(BR) EBO
V
CE (sat )
V
BE (s at)
h
FE
h
FE
f
T
C
CB O
t
s
t
on
t
off
*
Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Collector Cutoff
Current (IE=0)
Collector Cutoff
Current (V
BE
=0)
V
=20V T
CB
= 20 V 0.4 µA
V
CE
Collector-base
Breakdown Voltage
(I
=0)
E
IC=10µA40 V
Collector-emitter
Breakdown Voltage
(V
=0)
BE
=10µA40 V
I
C
* Collector-emitter
Breakdown Voltage
(I
=0)
B
IC=10mA 15 V
Emitter-base
Breakdown Voltage
(I
=0)
C
* Collector-emitter
Saturation Voltage
=10µA 4.5 V
I
E
IC=10mA
IC=30mA
IC= 100 mA
I
=10mA
C
T
=125°C
amb
* Base-emitter
Saturation Voltage
IC=10mA
IB=30mA
I
= 100 mA
C
IC=10mA
T
=–55
amb
* DC Current Gain IC=10mA
I
=10mA
C
IC=30mA
I
= 100 mA
C
* DC Current Gain IC=10mA
T
=–55°C
amb
Transition Frequency IC=10mA
f=100MHz
Collector-base
Capacitance
IE=0
f=1MHz
** Storage Time IC=10mA
IB1=
–IB2=10mA
** Turn-on Time IC=10mA
IB1=3 mA
** Turn-off Time IC=10mA
I
=3 mA
B1
amb
=1mA
I
B
IB=3mA
IB=10mA
I
=1mA
B
I
=1mA
B
IB=3mA
I
=10mA
B
IB=1mA
to 125 °C
V
CE
V
CE
VCE= 0.4 V
V
CE
V
CE
V
CE
V
CB
VCC=10V
V
CC
V
CC
I
B2
=150°C30µA
= 0.35 V
=1V
=1V
0.7
0.59
40
40
30
20
0.14
0.17
0.28
0.19
0.8
0.9
1.1
63
66
71
0.2
0.25
0.5
0.3
0.85
1.15
1.6
1.02
120
120
= 0.35 V 20 50
= 10 V 500 675 MHz
= 5 V 2.3 4 pF
613ns
=3V 9 12 ns
=3V
= – 1.5 mA
13 18 ns
°C/W
°C/W
V
V
V
V
V
V
V
V
2/6
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