Datasheet 1N5822, 1N5820, 1N5821 Datasheet (SGS Thomson Microelectronics)

®

LOW DROP POWER SCHOTTK Y RECTIFIER

MAIN PRODUCTS CHARACTE RISTICS

1N582x

I

F(AV)

V

RRM

T

j

(max) 0.475 V

V

F

3 A

40 V

150°C

FEATURES AND BENE FITS

VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
EXTREMELY FAST SWITCHING
LOW FORWARD V O LTAGE DROP

DESCRIPTION

Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

stg

Tj

dV/dt

Repetitive peak reverse voltage
RMS forward current
Average forward current TL = 100°C

Surge non repetitive forward current tp = 10 ms

Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of rev erse v oltage

δ = 0.5
T

= 110°C

L

δ = 0.5

Sinusoidal

DO-201AD

Value

1N5820 1N5821 1N5822

Unit

20 30 40 V

10 A

3A

33 A

80 A

- 65 to + 150 °C
150 ° C

10000 V/µs

dPtot

* :

July 1999 - Ed: 2A

dTj

<

Rth(j−a

1

thermal runaway condition for a diode on its own heatsink

)

1/5

1N582x

THERMA L RE SISTA NC ES

Symbol Parameter Value Unit

R

R

th (j-a)

th (j-l)

Junction to ambient
Junction to lead

STATIC ELECTRICAL CHARACTE RISTICS

Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit

Lead length = 10 mm 80 °C/W
Lead length = 10 mm 25 °C/W

*

I

R

V

F

Reverse leakage
current

*

Forward voltage drop Tj = 25°CI

Tj = 25°CV
Tj = 100°C

Tj = 25°CI

= V

R

= 3 A

F

= 9.4 A

F

RRM

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equations :
P = 0.33 x I
P = 0.33 x I

F(AV)
F(AV)

+ 0.035 I
+ 0.060 I

F2(RMS )
F2(RMS )

for 1N5820 / 1N5821
for 1N5822

222mA

20 20 20 mA

0.475 0.5 0.525 V

0.85 0.9 0.95 V

Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).

PF(av)(W)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

δ = 0.05

2/5

δ = 0.1

δ = 0.2

IF(av) (A)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Fig. 2: Average forward power dissipation versus
average forward current (1N5822).

PF(av)(W)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

δ = 0.05

δ = 0.1

IF(av) (A)

δ = 0.2

δ

=tp/T

δ = 0.5

δ = 1

T

tp

1N582x

Fig. 2-1: Average forward current versus ambient

temperature (δ=0.5) (1N5820/1N5821).

IF(av)(A)

3.5

3.0

Rth(j-a)=Rth(j-l)=25°C/W

2.5

2.0

Rth(j-a)=80°C/W

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

δ

=tp/T

T

tp

Tamb(°C)

Fig. 3-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).

IM(A)

16
14
12
10

8
6
4

I

M

2
0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=75°C

Ta=100°C

Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5822).

IF(av)(A)

3.5

Rth(j-a)=Rth(j-l)=25°C/W

3.0

2.5

2.0

Rth(j-a)=80°C/W

1.5

1.0

T

0.5

=tp/T

δ

0.0
0 25 50 75 100 125 150

tp

Tamb(°C)

Fig. 3-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).

IM(A)

12
11
10

9
8
7
6
5
4
3

I

M

2
1
0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=75°C

Ta=100°C

Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recomm ended
pad layout).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

δ = 0.5

0.4

δ

=tp/T

T

tp

δ = 0.2

0.2

δ = 0.1

Single pulse

0.0
1E-1 1E+0 1E+1 1E+2 1E+3

tp(s)

Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).

C(pF)

600

1N5820

100

1N5822

VR(V)

10

12 5102040

F=1MHz

Tj=25°C

1N5821

3/5

1N582x

Fig. 6-1: Reverse leakage current versus reverse

volt age app lied (ty pica l valu es) (1N 5820/ 1N58 21).

IR(mA)

1E+2

1E+1

1E+0

Tj=125°C

Tj=100°C

1N5820

1N5821

1E-1

1E-2

1E-3

0 5 10 15 20 25 30

Tj=25°C

VR(V)

Fig. 7-1: Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).

IFM(A)

50.00

Fig. 6-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).

IR(mA)

5E+1
1E+1

1E+0

Tj=125°C

Tj=100°C

1E-1

1E-2

1E-3

0 5 10 15 20 25 30 35 40

Tj=25°C

VR(V)

Fig. 7-2: Forward voltage drop versus forward
current (typical values) (1N5822).

IFM(A)

50.00

10.00

Tj=125°C

1.00

Tj=100°C

Tj=25°C

0.10

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VFM(V)

Fig. 8: Non repetitive surge peak forward current
versus number of cycles.

IFSM(A)

100

80

60

40

20

Number of cycles

0

1 10 100 1000

F=50Hz

Tj initial=25°C

10.00

1.00

Tj=125°C

Tj=100°C

Tj=25°C

0.10

VFM(V)

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

4/5

PACKAGE ME CHANICAL D AT A

DO-201AD plastic

1N582x

BA

note 1

ØD ØD

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 9.50 0.374
B 25.40 1.000

∅ C 5.30 0.209
∅ D 1.30 0.051

E 1.25 0.049

E

note 2

B

note 1

E

ØC

NOTES

1 - The lead diameter ∅ D is not controlled over zone E
2 - The minimum axial length within which the device may be

placed with its leads bent at right angles is 0.59"(15 mm)

Ordering type Marking Package Weight Base qty Delivery mode

1N582x P art num ber

DO-201AD 1.12g 600 Ammopack

cathode ring

1N582xRL Part number

DO-201AD 1.12g 1900 Tape & reel

cathode ring

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwi se un der any pat ent or patent rights of STMic roelec tronics. S pecifications ment ioned in t his publ ication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems wi thou t ex press written ap­proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroe lectronics

© 1999 STMicroelectronics - Printed in Italy - All rights reser ved.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

5/5