FEATURES
.HIGHSURGECAPABILITY
.HIGH ON-STATECURRENT
.HIGH STABILITYAND RELIABILITY
DESCRIPTION
TYN 225 -- -> TYN 1225
SCR
The TYN 225 ---> TYN 1025 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology.
This general purpose Family Silicon Controlled
Rectifiers is designed for power supply up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
RMS on-state current
(180° conduction angle)
Average on-state current
(180° conduction angle, single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp = 10 ms 310 A2s
Gate supply : IG= 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range - 40 to + 150
Tc = 95 °C25 A
Tc = 95 °C16 A
tp = 8.3 ms 260 A
tp = 10 ms 250
TO220AB
(Plastic)
- 40 to + 125
G
A
K
100 A/µs
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol Parameter TYN Unit
225 425 625 825 1025 1225
V
DRM
V
RRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200 V
260 °C
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TYN 225 ---> TYN 1225
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.3 °C/W
GATE CHARACTERISTICS (maximumvalues)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20 µs) I
G (AV)
Symbol Test Conditions Value Unit
=4A(tp=20µs) V
FGM
RGM
=5V.
I
GT
V
GT
V
GD
tgt VD=V
I
L
I
H
V
TM
I
DRM
I
RRM
dV/dt Linear slope up to VD=67%V
tq VD=67%V
VD=12V (DC) RL=33Ω Tj=25°C MAX 40 mA
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 1.5A/µs
IG= 1.2 I
IT= 100mA gate open Tj=25°C MAX 50 mA
ITM= 50A tp= 380µs Tj=25°C MAX 1.6 V
V
DRM
V
RRM
gate open
dITM/dt=30 A/µsdV
=3.3kΩ Tj= 125°C MIN 0.2 V
= 200mA
GT
Rated
Rated
DRMITM
= 50A VR= 25V
/dt= 50V/µs
D
DRM
Tj=25°C TYP 2 µs
Tj=25°C TYP 80 mA
Tj=25°C MAX 0.01 mA
Tj= 125°C4
Tj= 125°C MIN 500 V/µs
Tj= 125°C TYP 70 µs
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Fig.1 : Maximum average power dissipation versus
average on-state current.
TYN 225 ---> TYN 1225
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (T
and T
) for different thermal resistances heatsink +
case
contact.
amb
Fig.3 : Average on-state current versus case
temperature.
Fig.5 : Relative variation of gate trigger current versus
junction temperature.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Zth( j-c)
0.1
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth( j-a)
tp(s )
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
3/4
TYN 225 ---> TYN 1225
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t.
PACKAGE MECHANICAL DATA
TO220AB Plastic
A
G
I
P
=N=
D
F
O
H
J
B
C
L
M
Fig.8 : On-state characteristics (maximum values).
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.40 4.60 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Cooling method : C
Marking : type number
Weight : 2.3 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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