Semiconductor NVMFS5A140PLZ User Manual

NVMFS5A140PLZ

MOSFET – Power, Single

P-Channel

-40 V, -140 A, 4.2 mW

Features

• Small Footprint (5 x 6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

V

DSS

−40 V

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R

MAX ID MAX

DS(ON)

4.2 mW @ −10 V

7.2 mW @ −4.5 V

−140 A

• These Devices are Pb−Free and are RoHS Compliant

D(5)

SPECIFICATION MAXIMUM RATINGS (T

noted) (Notes 1, 2, 3)

Symbol

V

DSS

V

GS

I

D

P

D

I

D

P

D

I

DP

TJ, T

STG

I

S

E

AS

T

L

Drain to Source Voltage −40 V

Gate to Source Voltage ±20 V

Continuous Drain,
Current R
(Notes 1, 3)

Power Dissipation

(Note 1)

R

q

JC

Continuous Drain:
Current R
(Notes 1, 2, 3)

Power Dissipation

(Note 1, 2)

R

q

JA

Pulsed Drain
Current

Operating Junction and Storage Temperature −55 to

Source Current (Body Diode) −140 A

Single Pulse Drain to Source Avalanche
Energy (L= 1.0 mH, I

Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)

Parameter Value Unit

Steady

,

q

JC

State

Steady

q

JA

State

PW ≤ 10 ms,
duty cycle ≤ 1%

= −29 A)

L(pk)

Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Value Unit

R

q

JC

R

q

JA

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.

2. Surface mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

Junction to Case Steady State 0.75

Junction to Ambient Steady State (Note 2) 39

= 25°C unless otherwise

J

T

= 25°C −140 A

C

T

= 25°C 200 W

C

T

= 25°C −20 A

A

T

= 25°C 3.8 W

A

−560 A

+175

420 mJ

260 °C

2

, 2 oz. Cu pad.

°C

1: Source
2: Source
3: Source

G(4)

4: Gate
5: Drain

S (1,2,3)

P-CHANNEL MOSFET

DFN5

(SO−8FL)

MARKING DIAGRAM

D
S
S
S
G

XXXXXX

AYW ZZ

D

D

D

XXXXXX = Specific Device Code

5A140L(NVMFS5A140PLZ)

140LWF(NVMFS5A140PLZWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of
this data sheet.

°C/W

© Semiconductor Components Industries, LLC, 2017

July, 2019 − Rev. 0

1 Publication Order Number:

NVMFS5A140PLZ/D

NVMFS5A140PLZ

ELECTRICAL CHARACTERISTICS (T

Symbol

Parameter Test Condition Min Typ Max Unit

= 25°C unless otherwise noted)

J

OFF CHARACTERISTICS

V

(BR)DSS

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = −1 mA, VGS = 0 V −40 V

Zero Gate Voltage Drain Current VDS = −40 V, V

Gate to Source Leakage Current VGS = ±16 V, V

= 0 V

GS

= 0 V ±10

DS

TJ = 25°C −1.0

T

= 100°C

J

(Note 4)

−100

mA

mA

mA

ON CHARACTERISTICS (Note 5)

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VDS = −10 V, ID = −1mA −1.2 −2.6 V

Drain to Source On Resistance

VGS = −10 V ID = −50 A 3.2 4.2

VGS = −4.5 V ID = −50 A 5.0 7.2

mW

Forward Transconductance VDS = −10 V, ID = −50 A 125 S

CHARGES, CAPACITANCES & GATE RESISTANCE

V

= 0 V, f = 1 MHz

GS

V

= −20 V,

DS

V

= −10 V, I

GS

V

= −20 V,

DS

= −50 A

D

7400

pF

136

nC

Q

C

C

C

g(tot)

Q

Q

iss

oss

rss

gs

gd

Input Capacitance

Output Capacitance 1030

Reverse Transfer Capacitance 720

Total Gate Charge

Gate to Source Charge 26

Gate to Drain Charge 31

SWITCHING CHARACTERISTICS (Note 6)

t

d(on)

t

d(off)

Turn-On Delay Time

t

Rise Time 860

r

Turn-Off Delay Time 540

t

Fall Time 740

f

VDS = −20 V, ID = −50 A,

= −10 V, RG = 50 W

V

GS

50

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

V

SD

t

Q

Forward Diode Voltage V

Reverse Recovery Time

rr

Reverse Recovery Charge 236 nC

rr

GS

V

GS

di/dt = 100 A/ms

= 0 V, I

= 0 V, I

= −50 A −0.83 −1.5 V

S

= −50 A

S

108 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. The maximum value is specified by design at T

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2 %.

= 100 °C. Product is not tested to this condition in production.

J

6. Switching characteristics are independent of operating junction temperatures.

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NVMFS5A140PLZ

TYPICAL CHARACTERISTICS

Figure 1. ID − V

Figure 3. R

DS(on)

DS

− V

GS

Figure 2. ID − V

Figure 4. R

DS(on)

GS

− T

J

Figure 5. IS − V

SD

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Figure 6. SW Time − I

D