Semiconductor NCP1362 User manual

Page 1
Primary Side PWM Controller for Low Power Offline SMPS
NCP1362
Thanks to a Novel Method this new controller saves the secondary feedback circuitry for Constant Voltage and Constant Current regulation, achieving excellent line and load regulation without traditional opto coupler and TL431 voltage reference.
The NCP1362 operates in valley lockout quasi−resonant peak current mode control mode at high load to provide high efficiency. When the power on the secondary side starts to diminish, the controller automatically adjusts the duty−cycle then at lower load the controller enters in pulse frequency modulation at fixed peak current with a valley switching detection. This technique allows keeping the output regulation with tiny dummy load. Valley lockout at the first 4 valleys prevent valley jumping operation and then a valley switching at lower load provides high efficiency.
Features
• Constant Voltage Primary−Side Regulation < ±5%
• Constant Current Primary−Side Regulation < ±5%
• LFF and BO Feature on a Dedicated Pin:
♦ BO Detection ♦ LFF for CC Regulation Improvement
• Quasi−Resonant with Valley Switching Operation
• Optimized Light Load Efficiency and Stand−by Performance
• Maximum Frequency Clamp (No Clamp, 80, 110 and 140 kHz)
• Cycle by Cycle Peak Current Limit
• Output Voltage Under Voltage and Over Voltage Protection
(UVP or OVP)
• Secondary Diode or Winding Short−Circuit Protection
• Wide Operation V
• Low Start−up Current
• CS & V
/ZCD Pin Short and Open Protection
S
• Internal Temperature Shutdown
• Internal and Fixed Frequency Jittering for Better EMI Signature
• Dual Frozen Peak Current to Both Optimize Light Load Efficiency
(10% Load) and Stand−by Performance (No−load)
• Fault Input for Severe Fault Conditions, NTC Compatible for OTP
• These are Pb−Free Devices
Applications
• Low Power ac−dc Adapters for Routers and Set−Top Box
• Low Power ac−dc Adapters for Chargers
Range (up to 28 V)
CC
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8
1
SOIC−8
CASE 751AZ
MARKING DIAGRAM
8
P1362yy
ALYW
G
1
IC (Pb−Free)
P1362yy = Specific Device Code
A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package
Vs/ZCD
COMP
Fault
ORDERING INFORMATION
See detailed ordering and shipping information on page 28 of this data sheet.
(See page 28)
PINOUT DIAGRAM
1
CS
(Top View)
BO/LFF VCC GND DRV
© Semiconductor Components Industries, LLC, 2019
March, 2021 − Rev. 3
1 Publication Order Number:
NCP1362/D
Page 2
NCP1362
Ac
Ac
0
1
2
3
4
NCP1362
VS/ZCD
COMP
Fault
CS
BO/LFF
VCC
GND
DRV
2
3
5
4
8
7
6
5
3
2
1
0
1
Out
RTN_Out
0
Figure 1. NCP1362 Typical Application Schematic for AC Input Voltage
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Page 3
NCP1362
V
Vs /
ZCD
Comp
CS
UVLO V
cc
V
ref_CC
VCC and Logic
Management of
double hiccup
Zero Crossing & Signal Sampling
CC
Control
V V DbleHiccup POReset EN_UVP
Sampled V
dd
CC (Reset)
CC (OVP)
out
SS
FB_CC
FB _CV
126% V
V
UVP
UVP_Cmp
EN_UVP
OTA
V
ref_CV1
Peak current
V
DD
I
CS
V
I
CS_EN
Control
1/Kcomp
DD
V
Jitter
LEB 1
V
ILIM
POReset
DbleHiccup
LEB2
Counter
V
CS(Stop )
CS pin Open (VCS>1.2
V) & Short ( V
I
CS_EN
mV) detection is
activated at each startup
POReset
Double_Hiccup_ends
Blanking
QR multi−mode
Valley lockout & Valley Switching & VCO management
Control Law
&
Primary Peak
Current Control
OVP_Cmp
4 clk
Counter
OVP
ref_CV1
UVP
DbleHiccup
FB Reset
Max_Ipk reset
Count
Reset
Counter
4 clk
SCP
<50
CS
V
CC(OVP )
OCP
Timer
Reset Timer
FB
UVP
SCP
S
Q
R
OCP
CS pin Fault
Reset
Soft Start
R
S
I
%VBO
SS
BO_EN
BO_DIS
BO_OK
High_Line
UVLO
S
Q
R
POReset
Fault
Q
SS
end
Note: OVP: Over Voltage Protection UVP: Under Voltage Protection OCP : Over Current Protection SCP: Short Circuit Protection t
LEB1>tLEB2
FeedForward
V
cc
Clamp
V
fault( OVP)
V
Fault (OTP)
V
fault(EN )
Line
V
V
V
BO (EN)
BO (ON)
HL( on)
BO/LFF
DRV
GND
V
DD
fault(OTP)
I
Fault
fault(clamp)
R
fault(clamp)
V
Figure 2. Functional Block Diagram
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Page 4
NCP1362
Table 1. PIN FUNCTION DESCRIPTION
Pin Name Function
1 Vs/ZCD Connected to the auxiliary winding; this pin senses the voltage output for the primary regula-
2 Comp This is the error amplifier output. The network connected between this pin and the ground
3 Fault The controller enters in fault mode if the voltage of this pin is pulled above or below the fault
4 CS This pin monitors the primary peak current.
5 DRV The driver’s output to an external MOSFET gate.
6 GND Ground reference.
7 V
CC
8 BO/LFF Detects too low input voltage conditions (Brown−Out). Also voltage pin level is used for build-
Table 2. MAXIMUM RATINGS (Note 1)
Symbol
V
CC(MAX)
I
CC(MAX)
DVCC/Dt
E
V
MAX
I
MAX
V
DRV(MAX)
I
DRV(MAX)
R
θ
T
J(MAX)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
2. V
DRV
Maximum Power Supply voltage, VCC pin, continuous voltage Maximum current for V
Maximum slew rate on V
Single Pulse Avalanche Rating 120 mJ
as
Maximum voltage on low power pins (except pins DRV and VCC) Current range for low power pins (except pins DRV and VCC)
Maximum driver pin voltage, DRV pin, continuous voltage Maximum current for DRV pin
Thermal Resistance Junction−to−Air, 2.0 oz Printed Circuit Copper Clad 190 °C/W
J−A
Maximum Junction Temperature 150 °C
Operating Temperature Range −40 to +125 °C
Storage Temperature Range −60 to +150 °C
Human Body Model ESD Capability per JEDEC JESD22−A114F 2 kV
Machine Model ESD Capability (All pins except DRV) per JEDEC JESD22−A115C 200 V
Charged−Device Model ESD Capability per JEDEC JESD22−C101E 500 V
is the DRV clamp voltage V
tion and detects the core reset event for the Quasi−Resonant mode of operation.
adjusts the regulation loop bandwidth.
thresholds. A precise pullup current allows direct interface with an NTC thermistor. Fault de­tection triggers a latch.
This pin is connected to an external auxiliary voltage and supplies the controller.
ing Line FeedForward compensation for improving Constant Current regulation tolerance.
Rating Value Unit
−0.3 to 28
pin
CC
pin during start−up phase +0.4
CC
Internally limited
−0.3, 5.5
−2, +5
DRV(high)
when VCC is higher than V
DRV(high)
. V
is VCC otherwise.
DRV
−0.3, V
(Note 2)
DRV
−300, +500
V
mA
V/ms
V
mA
V
mA
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Page 5
NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(V
= 12 V, For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
CC
Characteristics
SUPPLY SECTION AND VCC MANAGEMENT
Level at which Driving Pulses
V
CC
are Authorized
VCC Level at which Driving Pulses
VCC increasing V
VCC decreasing V
are Stopped
Internal Latch/Logic Reset Level
Internal Autorecovery Reset Level (Note 4) V
Hysteresis above V Hiccup in Latch Mode
Hysteresis below V before Latch Reset
CC(off)
CC(off)
for Fast
Over Voltage Protection Over Voltage threshold V
Start−up Supply Current, Controller Disabled or Latched
Internal IC Consumption, Steady State
Internal IC Consumption in Minimum Frequency Clamp
Internal IC Consumption in Fault
VCC < V increasing from 0 V
FSW = 65 kHz C
VCO mode, FSW = f V
Autorecovery mode I Mode (after a fault when VCC decreasing to V
Internal IC Consumption in Fault Mode (after a fault when V decreasing to V
CC(off)
CC(off)
)
Latch mode I
CC
)
CURRENT COMPARATOR
Current Sense Voltage Threshold
V
V
Cycle by Cycle Leading Edge Blanking Duration
Cycle by Cycle Current Sense Propagation Delay
Timer Delay before Detecting an Overload Condition
VCS > (V
DRV turn−off
When CS pin w V
(Note 3)
Threshold for Immediate Fault Protection Activation
Leading Edge Blanking Duration for V
Maximum Peak Current Level at which VCO Takes Over or Frozen Peak Current
CS(stop)
V
0.6 V < V
(other possible options on
demand)
Minimum Peak Current Level V
V
(other possible options on
demand)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
Condition Symbol Min Typ Max Unit
16.5 18 19.5 V
6.0 6.5 7.0 V
− 6.25 − V
0.6 − − V
− 0.2 − V
0.15 0.30 0.50 V
24 26 28 V
– 5.4 7.0
– 1.6 2.3 mA
– –
325 210
– 2.0 2.2 mA
– 1.0 1.2 mA
0.76 0.8 0.84 V
250 320 380 ns
– 50 110 ns
50 70 90 ms
1.10 1.20 1.30 V
− 120 − ns
− 250 − mV
− 65 − mV
= 1 nF
L
Comp
f
VCO(min)
f
VCO(min)
C
= 1 nF
L
Comp
increasing
CS
increasing
CS
increasing
CS Comp
CC(on)
= GND
= 1 kHz = 200 Hz
= V
Comp(max)
ILIM
Comp
< 0.2 V
& V
CC
VCO(min)
,
+ 100 mV) to
ILIM
< 1.9 V
,
CC(on)
CC(off)
V
CC(reset)
CC(reset_auto)
V
CC(latch_hyst)
V
CC(reset_hyst)
CC(OVP)
I
CC(start)
I
CC(steady)
I
CC(VCO)
CC(auto)
CC(latch)
V
ILIM
t
LEB1
t
ILIM
T
OCP
V
CS(stop)
t
LEB2
V
CS(VCO)
V
CS(STB)
mA
mA
430 370
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Page 6
NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
REGULATION BLOCK
Internal Voltage Reference for Constant Current Regulation
Internal Voltage Reference for Constant Voltage Regulation
TJ = 25°C
−40°C < T
TJ = 25°C
−40°C < T
< 125°C
J
< 125°C
J
Error Amplifier Current Capability
Error Amplifier Gain G
Error Amplifier Output Voltage Internal offset on Comp pin V
Internal Current Setpoint Division Ratio
Valley Thresholds
Transition from 1 Transition from 2nd to 3rd Valley Transition from 3rd to 4th Valley Transition from 4 Transition from VCO to 4th Valley Transition from 4th to 3rd Valley Transition from 3rd to 2nd Valley Transition from 2nd to 1st Valley
Minimal Difference between any Two Valleys
Internal Dead Time Generation for VCO Mode
Internal Dead Time Generation for VCO Mode
Internal Dead Time Generation for VCO Mode
Minimum Switching Frequency in VCO Mode
st
to 2nd Valley
th
Valley to VCO
V
decreasing
Comp
V
decreasing
Comp
V
decreasing
Comp
V
decreasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing or V
Comp
decreasing
Comp
Entering in VCO when
V
is decreasing and
Comp
crosses V
HVCOD
Leaving VCO mode when
V
is increasing and
Comp
crosses V
HVCOI
When in VCO mode –
1−kHz option
V
= 1.8 V
Comp
V
= 1.4 V
Comp
V
= 0.9 V
Comp
V
< 0.2 V
Comp
V
= GND
Comp
Option 1
Option 2 (other possible options on demand)
Maximum Switching Frequency
Option 1 Option 2 Option 3 Option 4
Maximum On Time T
DEMAGNETIZATION INPUT – ZERO VOLTAGE DETECTION CIRCUIT and VOLTAGE SENSE
Threshold Voltage V
V
ZCD
V
Hysteresis V
ZCD
decreasing V
ZCD
increasing V
ZCD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
V
ref_CC
V
ref_CV1
I
EA
EA
Comp(max)
V
Comp(min)
V
Comp(offset)
K
Comp
V
H2D
V
H3D
V
H4D
V
HVCOD
V
HVCOI
V
H4I
V
H3I
V
H2I
DV
H
T
DT(start)
T
DT(ends)
T
DT
f
VCO(MIN)
f
MAX
on(max)
ZCD(TH)
ZCD(HYS)
0.98
0.97
2.450
2.425
1.00
1.00
2.500
2.500
1.02
1.03
2.550
2.575
− ±40 −
150 200 250
−
−
−
4.9
1.1
0
−
−
−
− 4 − –
−
−
−
−
−
−
−
−
2.50
2.30
2.10
1.90
2.50
2.70
2.90
3.10
−
−
−
−
−
−
−
−
176 − − mV
− 1.15 −
− 650 − ns
−
−
−
−
0.8
0.16
−
72 99
127
1.6 11
110
1000
1.0
0.200
No Clamp
80
110 140
−
−
−
−
1.2
0.24
−
88 121 153
32 36 40
25 45 70 mV
15 30 45 mV
V
V
mA
mS
V
V
ms
ms
kHz
kHz
ms
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NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
DEMAGNETIZATION INPUT – ZERO VOLTAGE DETECTION CIRCUIT and VOLTAGE SENSE
Threshold Voltage for Output Short Circuit or Aux. Winding Short Circuit Detection
After t V
ZCD
BLANK_ZCD
< V
ZCD(short)
if
V
ZCD(short)
30 50 75 mV
Delay after On−time that the V
/ZCD is still Pulled to Ground
S
Blanking Delay after On−time (V
/ZCD Pin is Disconnected from
S
the Internal Circuitry)
Timeout after Last Demagnetization Transition
Input Leakage Current VCC > V
Delay from Valley Detection to DRV Low
When V
Comp
When V
Comp
When V
Comp
When V
Comp
CC(on) VZCD
DRV is low
> 1.7 V < 1.7 V
> 1.7 V < 1.7 V
= 4 V,
t
short_ZCD
t
BLANK_ZCD
t
out
I
ZCD
t
ZCD_delay
−
−
−
−
0.750
0.350
1.450
0.750
−
−
−
−
4.0 4.5 5.0
− − 0.1
− 290 − ns
ms
ms
ms
mA
DRIVE OUTPUT − GATE DRIVE
Drive resistance
DRV Sink − VCC = 8 V DRV Source − V
Rise time C
Fall time C
= 1 nF, from 10% to 90% t
DRV
= 1 nF, from 90% to 10% t
DRV
DRV Low voltage VCC = V
= 220 pF, R
DRV High voltage VCC = V
= 220 pF, R
CC(off)
DRV
CC(OVP)
DRV
= 8 V
CC
+ 0.2 V, C
= 33 kW
− 0.2 V, C
= 33 kW
DRV
DRV
R
SNK
R
SRC
V
DRV(low)
V
DRV(high)
−
−
r
f
− 45 85 ns
− 30 65 ns
10
8
−
W
−
6.0 − − V
− 12.0 13.0 V
SOFT START
Internal Fixed Soft Start Duration
Current Sense peak current rising from V
CS(VCO)
to V
ILIM
t
SS
3 4 5 ms
JITTERING
Frequency of the Jittering CS Pin Source Current
Option 1 (other possible options on
f
jitter
1.2 1.5 1.8 kHz
demand)
Peak Jitter Voltage Added to PWM Comparator
Option 1 (other possible options on
V
jittter
− 60 − mV
demand)
BROWN−OUT & LINE FEED FORWARD
Brown−out Function is Disabled below this Level (before the 1
st
V
BO(en)
80 100 120 mV
DRV pulse only)
Pull−down Current Source on BO Pin for Open Detection
Brown−out Level at which the Controller Starts Pulsing
Brown−out Level at which the Controller Stops Pulsing
Brown−out Filter Time t
V
BO(on)
V
BO(off)
I
BO
− 300 − nA
0.75 0.80 0.85 V
0.65 0.70 0.75 V
BO
− 50 −
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
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Page 8
NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
BROWN−OUT & LINE FEED FORWARD
Line Feed Forward Compensation Gain
FAULT PROTECTION
Controller Thermal Shutdown
Device switching (F
∼ 65 kHz) – Tj rising
SW
Thermal Shutdown Hysteresis Device switching
(F
∼ 65 kHz) − Tj falling
SW
Fault Level Detection for OVP Internal sampled V
increasing V
= V
OVP
ref_CV1
Fault Level Detection for UVP → Double Hiccup Autorecovery
Internal sampled V decreasing
out
+ 26%
out
(UVP detection is disabled during T
EN_UVP
)
Blanking Time for UVP Detection Starting after the Soft start T
Pull−up Current Source on CS Pin for Open or Short Circuit Detec-
When VCS > V
CS_min
tion
CS Pin Open Detection CS pin open V
K
LFF
T
SHTDN(on)
T
SHTDN(off)
V
OVP
V
UVP
EN_UVP
I
CS
CS(open)
16 20 24
− 150 − °C
− 120 − °C
2.95 3.15 3.35 V
1.40 1.50 1.60 V
− 36 − ms
− 60 −
− 1.2 − V
mA/
V
mA
CS Pin Short Detection V
CS pin Short Detection Timer (Note 4) T
Fault Pin is Disabled below this Level (before the 1
st
DRV pulse
V
CS_min
CS_short
Fault(EN)
− 50 75 mV
− 3 −
ms
80 100 120 mV
only)
Overvoltage Protection (OVP) Threshold
Overtemperature Protection (OTP) Threshold
OTP Pull−up Current Source V
Fault Input Clamp Voltage I
Fault Input Clamp Voltage I
Fault Filter Time t
Number of Drive Cycle before Latch Confirmation
V
increasing V
Fault
V
decreasing V
Fault
= 0 V
Fault
T
= 25°C
j
= 110°C
T
j
= 0 mA (V
Fault
= 1 mA V
Fault
V
= V
Comp
V
CS
or Internal rebuilded V
out
or 0.40 V < V or V
> V
CS(stop)
> V
OVP
ZCD(short)
Comp(max)
Fault
Fault
< 3.00 V
= open) V
,
Fault(OVP)
Fault(OTP)
I
Fault(OTP)
I
Fault(OTP_110)
Fault(clamp)0
Fault(clamp)1
Fault(filter)
t
latch(count)
2.79 3.00 3.21 V
0.38 0.40 0.42 V
42.5
42.9
45.0
45.0
47.5
46.5
1.10 1.35 1.60 V
2.2 2.7 3.2 V
− 2 −
− 4 − −
mA
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
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Page 9
NCP1362
)
)
TYPICAL CHARACTERISTICS
18.09
18.07
18.05
(V)
18.03
CC(on)
18.01
V
17.99
17.97
17.95
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
(V)
CC(reset)
V
6.292
6.287
6.282
6.277
6.272
Figure 3. V
vs. Junction Temperature Figure 4. V
CC(on)
6.59
6.585
6.58
(V)
6.575
CC(off)
V
6.57
6.565
6.56
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
CC(off)
5.2
4.7
4.2
(mA)
3.7
CC(start)
I
3.2
6.267
6.262
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 5. V
0.808
0.806
0.804
(V)
0.802
ILIM
V
0.8
0.798
0.796
0.794
−50 −25 0 25 50 75 100 125
CC(reset
vs. Junction Temperature Figure 6. I
TEMPERATURE (5C)
Figure 7. V
vs. Junction Temperature Figure 8. t
ILIM
2.7
2.2
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
(ns)
LEB1
t
CC(start
316.5
316
315.5
315
314.5
314
313.5
313
312.5
312
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
LEB1
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Page 10
TYPICAL CHARACTERISTICS (Continued)
)
)
74
69
(ns)
64
ILIM
t
59
54
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
NCP1362
1.209
1.207
1.205
1.203
(V)
1.201
1.199
CS(stop)
V
1.197
1.195
1.193
1.191
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 9. t
254
253
252
251
(mV )
250
CS(VCO)
249
V
248
247
246
−50 −25 0 25 50 75 100 125
vs. Junction Temperature Figure 10. V
ILIM
TEMPERATURE (5C)
Figure 11. V
1.013
1.011
1.009
1.007
(V)
1.005
1.003
ref_CC
V
1.001
0.999
0.997
0.995
−50 −25 0 25 50 75 100 125
CC(VCO
vs. Junction Temperature Figure 12. V
TEMPERATURE (5C)
vs. Junction Temperature
CS(stop)
70
69.5
69
(mV )
68.5
CS(STB)
V
68
67.5
67
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
CS(STB
2.51
2.505
2.5
(V)
2.495
ref_CV1
V
2.49
2.485
2.48
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 13. V
vs. Junction Temperature Figure 14. V
ref CC
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10
vs. Junction Temperature
ref CV1
Page 11
NCP1362
)
TYPICAL CHARACTERISTICS (Continued)
48
47.5
47
46.5
46
(mV)
45.5
45
ZCD(TH)
V
44.5
44
43.5
43
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 15. V
3.17
3.16
3.15
(V)
OVP
V
3.14
ZCD(TH)
vs. Junction Temperature Figure 16. V
57.7
57.2
56.7
56.2
(mV)
55.7
55.2
54.7
ZCD(short)
V
54.2
53.7
53.2
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
ZCD(short)
1.56
1.555
vs. Junction Temperature
(V)
1.55
UVP
V
3.13
3.12
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 17. V
36.32
36.27
36.22
(ms)
36.17
EN_UVP
T
36.12
36.07
36.02
−50 −25 0 25 50 75 100 125
vs. Junction Temperature Figure 18. V
OVP
TEMPERATURE (5C)
Figure 19. T
vs. Junction Temperature Figure 20. V
EN UVP
(V)
BO(on)
V
1.545
1.54
-50 -25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
UVP
0.84
0.839
0.838
0.837
0.836
0.835
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
BO(on
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11
Page 12
NCP1362
V
(V)
)
)
)
)
TYPICAL CHARACTERISTICS (Continued)
0.695
0.693
0.691
0.689
BO(off)
0.687
0.685
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 21. V
106.5
105.5
104.5
vs. Junction Temperature Figure 22. K
BO(off)
(mV)
103.5
Fault(EN)
102.5
V
101.5
100.5
-50 -25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 23. V
Fault(EN
vs. Junction Temperature Figure 24. V
21.63
21.61
21.59
21.57
(mA/V)
21.55
LFF
K
21.53
21.51
21.49
21.47
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
LFF
3.011
3.006
3.001
2.996
(V)
2.991
2.986
Fault(OVP)
2.981
V
2.976
2.971
2.966
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Fault(OVP
vs. Junction Temperature
0.407
0.406
0.405
0.404
(V)
0.403
0.402
Fault(OTP)
0.401
V
0.4
0.399
0.398
−50 −25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 25. V
Fault(OTP
vs. Junction Temperature Figure 26. I
45.3
45.2
45.1
45
(mA)
44.9
44.8
Fault(OTP)
44.7
I
44.6
44.5
44.4
−50 −25 0 25 50 75 100 125
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12
TEMPERATURE (5C)
Fault(OTP
vs. Junction Temperature
Page 13
Table 4. FAULT MODES
Event Timer Protection Next Device Status Release to Normal Operation Mode
Overcurrent V
> V
CS
ILIM
Winding Short
V
> V
CS
CS(stop)
CS Pin Fault:
Short & Open
ZCD Short
V
ZCD
t
BLANK_ZCD
< V
ZCD(short)
time
after
Low Supply
V
< V
CC
CC(off)
High Supply
V
> V
CC
CC(ovp)
OVP: V
UVP: V
when V
Internal V
out
Internal V
out
out
out
> 126% V
< 60% V
is Decreasing Only
out
ref_CV1
ref_CV1
,
Internal TSD
NOTE: Latching off protection available upon request.
OCP Timer Double Hiccup − Resume to normal operation: if 4 pulses from
4 Consecutive Pulses
with V
CS
> V
CS(stop)
Before Start−up
Immediate
4 Consecutive Pulses Double Hiccup Resume operation after Double Hiccup
10−ms Timer
10−ms Timer
4 Consecutive Pulses Double Hiccup Resume operation after Double Hiccup
4 Consecutive Pulses Double Hiccup Resume operation after Double Hiccup
10−ms Timer
NCP1362
FB Reset & then Reset timer
− Resume operation after Double Hiccup
Double Hiccup Resume operation after Double Hiccup
Double Hiccup Resume operation after Double Hiccup
Simple Hiccup Resume operation after Simple Hiccup
Double Hiccup Resume operation after Double Hiccup
Double Hiccup Resume operation after Double Hiccup &
T < (T
SHTDN(off)
)
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Page 14
NCP1362
APPLICATION INFORMATION
The NCP1362 is a flyback power supply controller providing a means to implement primary side constant− current regulation and secondary side constant−voltage regulation. NCP1362 implements a current−mode architecture operating in quasi−resonant mode. The controller prevents valley−jumping instability and steadily locks out in a selected valley as the power demand goes down. As long as the controller is able to detect a valley, the new cycle or the following drive remains in a valley. Thanks to a dedicated valley detection circuitry operating at any line and load conditions, the power supply efficiency will always be optimized. In order to prevent any high switching frequency two frequency clamp options are available.
• Quasi−Resonance Current−mode Operation:
implementing quasi−resonance operation in peak current−mode control optimizes the efficiency by switching in the valley of the MOSFET drain−source voltage. Thanks to a proprietary circuitry, the controller locks−out in a selected valley and remains locked until the input voltage significantly changes. Only the four first valleys could be locked out. When the load current diminishes, valley switching mode of operation is kept but without valley lock−out. Valley−switching operation across the entire input/output conditions brings efficiency improvement and lets the designer build higher−density converters.
• Frequency Clamp: As the frequency is not fixed and
dependent on the line, load and transformer specifications, it is important to prevent switching frequency runaway for applications requiring maximum switching frequencies up to 90 kHz or 130 kHz. Three frequency clamp options at 80 kHz, 110 kHz or 140 kHz are available for this purpose. In case frequency clamp is not needed, a specific version of the NCP1362 exists in which the clamp is deactivated.
• Primary Side Constant Current Regulation: NCP1362
controls and regulates the output current at a constant level regardless of the input and output voltage conditions. This function offers tight over power protection by estimating and limiting the maximum output current from the primary side, without any particular sensor.
V
OUT
V
NOM
0
Figure 27. Constant−Voltage & Constant−Current
CV Mode
Mode
I
NOM
CC Mode
I
OUT
• Soft−Start: 4−ms internal fixed soft start guarantees
a peak current starting from zero to its nominal value with smooth transition in order to prevent any overstress on the power components at each startup.
• Cycle−by−Cycle Peak Current Limit: If the max peak
current reaches the V
level, the over current
ILIM
protection timer is enabled and starts counting. If the overload lasts T
delay, then the fault is detected and
OCP
the controller stops immediately driving the power MOSFET. The controller enters in a double hiccup mode before autorecovering with a new startup cycle.
• V
Over Voltage Protection: If the V
CC
reaches the V
CC(OVP)
threshold the controller enters in
CC
voltage
fault mode. Thus it stops driving pulse on DRV pin. The part enters in double hiccup mode before resuming operation.
• Winding Short−Circuit Protection: An additional
comparator senses the CS signal and stops the controller if V LEB: t
LEB2
reaches V
CS
+ 50% (after a reduced
ILIM
). Short circuit protection is enabled only if 4 consecutive pulses reach SCP level. This small counter prevents any false triggering of short circuit protection during surge test for instance. This fault is detected and operations will be resumed like in a case
Over Voltage Protection.
of V
CC
• V
Over Voltage Protection: if the internally−built
out
output voltage becomes higher than V (V
+ 26%) a fault is detected. This fault is
ref_CV1
OVP
level
detected and operations are resumed like in the VCC Over Voltage Protection case.
• V
Under Voltage Protection: After each circuit power
out
on sequence, V the startup timer T
UVP detection is enabled only after
out
. This timer ensures that the
EN_UVP
power supply is able to fuel the output capacitor before checking the output voltage in on target. After this startup blanking time, UVP detection is enabled and monitors the Output voltage level. When the power supply is running in constant−current mode and when the output voltage falls below V
level, the controller
UVP
stops sending drive pulses and enters a double hiccup mode before resuming operations.
• V
/ZCD Pin Short Protection: at the beginning of each
S
off−time period, the V
/ZCD pin is tested to check
S
whether it is shorted or left open. In case a fault is detected, the controller enters in a double hiccup mode before resuming operations.
• EMI Jittering: a low−frequency triangular voltage
waveform is added to the CS pin. This helps spreading out energy in conducted noise analysis. Jittering is disabled in frequency foldback mode.
• Frequency Foldback: In frequency foldback mode,
the system reduces the switching frequency by adding some dead−time after the 4
th
valley is detected.
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14
Page 15
NCP1362
The controller will still run in valley switching mode even when the FF is enabled.
• Temperature Shutdown: if the junction temperature
reaches the T power MOSFET until the junction temperature decreases to T after a double hiccup mode.
level, the controller stop driving the
SHTDN
SHTDN(off)
, then the operation is resumed
• Brown−Out Detection: BO pin monitors bulk voltage
level via resistive divider and thus assures that the application is working only for designed bulk voltages. When BO pin is grounded before start−up
< V
(V
BO
dynamic frequency clamp are disabled.
), Brown−Out, Line FeedForward and
BO(en)
• Line FeedForward: By monitoring the voltage
available on BO pin it is possible to create a line feedforward compensation in order to improve the constant current accuracy.
• Fault Input: the NCP1362 includes a dedicated fault
input. It can be used to sense an overvoltage condition and latch off the controller by pulling up the pin above the upper fault threshold, V
Fault(OVP)
The controller is also disabled if the Fault pin voltage,
, is pulled below the lower fault threshold,
V
Fault
V
Fault(OTP)
, typically 0.4 V. The lower threshold is normally used for detecting an overtemperature fault (by the means of an NTC). If this pin is grounded before start−up, then its associated feature are disabled.
, typically 3.0 V.
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15
Page 16
DETAILED APPLICATION INFORMATION
NCP1362
Start−up Sequence
The NCP1362 start−up voltage is made purposely high to
permit large energy storage in a small V
capacitor value.
CC
This helps operate with a small start−up current which, together with a small V
capacitor, will not hamper the
CC
Input
Mains
start−up time. To further reduce the standby power, the start−up current of the controller is extremely low (see
I
CC(start)
). The start−up resistor can therefore be connected to the bulk capacitor or directly to the mains input voltage to further reduce the power dissipation.
R
Start−up
V
CC
C
bulk
C
VCC
Aux.
Winding
Figure 28. The Startup Resistor can be Connected to the Input Mains for Further Power Dissipation Reduction
The first step starts with the calculation of the needed V
CC
capacitor which will supply the controller when it operates until the auxiliary winding takes over. Experience shows that this time t consider we need at least an energy reservoir for a t 10 ms, the V
C
w
V
CC
can be between 5 ms and 20 ms. If we
1
capacitor must be larger than:
CC
I
V
CC(on)
CC
t
* V
1
CC(off)
1.6 m 10 m
w
18 * 6.5
w 1.4 mF
time of
1
(eq. 1)
Let us select a 1.5 mF capacitor at first and experiments in
the laboratory will let us know if we were too optimistic for the time t evaluate the charging current we need to bring the V voltage from 0 V to the V
. The VCC capacitor being known, we can now
1
of the IC. This current has
CC(on)
CC
to be selected to ensure a start−up at the lowest mains (85 V rms) to be less than 3 s (2.5 s for design margin):
V
C
I
charge
CC(on)
w
t
start−up
If we account for the I
Vcc
w
CC(start)
18 1.5 m
2.5
w 11 mA
(eq. 2)
= 6.3 mA (maximum) that
will flow inside the controller, then the total charging current
I
CVcc,min
+
To make sure this current is always greater than 16 mA,
then the minimum value for R
85 2
R
start−up
v
This calculation is purely theoretical, considering a constant charging current. In reality, the take over time can be shorter (or longer!) and it can lead to a reduction of the
V
capacitor. Thus, a decrease in charging current and an
CC
increase of the start−up resistor can be experimentally tested, for the benefit of standby power. Laboratory experiments on the prototype are thus mandatory to fine tune the converter. If we chose the 1.2−MW resistor as suggested by Eq. 4, the dissipated power at high line amounts to:
2
V
P
R
start−up,max
[
ac,peak
4 R
start−up
V
ac,rms
Ǹ
p
17.3 m
[
Ǹ
2
* V
p
R
start−up
can be extracted:
start−up
* 18
v 1.17 MW
Ǹ
ǒ
230 2
4 1.1 M
CC(on)
2
Ǔ
[ 24 mW
delivered by the start−up resistor must be 17.3 mA. If we connect the start−up network to the mains (half−wave connection then), we know that the average current flowing into this start−up resistor will be the smallest when V reaches the V
of the controller:
CC(on)
CC
Primary Side Regulation: Constant Current Operation
Figure 29 portrays idealized primary and secondary transformer currents of a flyback converter operating in Discontinuous Conduction Mode (DCM).
(eq. 3)
(eq. 4)
(eq. 5)
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Page 17
NCP1362
Ip(t)
(t), I
I
s
OUT
= <I
I
OUT
When the primary power MOSFET is turned on, the primary current is illustrated by the green curve of Figure 29. When the power MOSFET is turned off the primary side current drops to zero and the current into the secondary winding immediately rises to its peak value equal to the primary peak current divided by the primary to secondary turns ratio. This is an ideal situation in which the leakage inductance action is neglected.
The output current delivered to the load is equal to the average value of the secondary winding current, thus we can write:
Where:
• t
is the switching period
SW
• t
• N
is the demagnetizing time of the transformer
demag
is the secondary to primary turns ratio, where
PS
& NS are respectively the transformer primary and
N
P
secondary turns:
• I
is the magnetizing peak current sensed across the
p,pk
sense resistor on CS pin:
Internal constant current regulation block is building the constant current feedback information as follow:
s(t)
>
t
on
Figure 29. Primary and Secondary Transformer Current Waveforms
t
I
demag
I
+ 〈i
sec
out
I
p,pk
V
FB_CC
(t)〉 +
Nps+
+
+ V
2N
N
N
V
R
ref_CC
p,pk
ps
s
p
CS
sense
t
sw
t
SW
t
demag
(eq. 6)
(eq. 7)
(eq. 8)
(eq. 9)
,pIpk
I
t
demag
,,ppk
ps
t
sw
IN=
spk
As the controller monitors the primary peak current via the sense resistor and due to the internal current setpoint divider (K
) between the CS pin and the internal
comp
feedback information, the output current could be written as follow:
V
+
8Nps R
ref_CC
sense
I
out
The output current value is set by choosing the sense resistor value:
V
+
8Nps I
ref_CC
out
R
sense
Primary Side Regulation: Constant Voltage Operation
In primary side constant voltage regulation, the output voltage is sensed via the auxiliary winding. During the on−time period, the energy is stored in the transformer gap. During the off−time this energy stored in the transformer is delivered to the secondary and auxiliary windings.
As illustrated by Figure 30, when the transformer energy is delivered to the secondary, the auxiliary voltage sums the output voltage scaled by the auxiliary and secondary turns ratios and the secondary forward diode voltage. This secondary forward diode voltage could be split in two elements: the first part is the forward voltage of the diode (V
), and the second is related to the dynamic resistance of
f
the diode multiplied by secondary current (R Where this second term will be dependant of the load and line conditions.
time
time
(eq. 10)
(eq. 11)
y IS(t)).
D
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NCP1362
VN*
I
OUT
IN
N
= <I
0V
pa
ps
s(t)
I
s
>
V
AUX
Ip(t)
(t), I
(t)
OUT
N
N
pa
+
()
sec
ps
,pIpk
I
t
demag
,,ppk
ps
t
sw
IN=
spk
t
on
VVI
out f
V
out
N
N
pa
ps
time
time
time
Figure 30. Typical Idealized Waveforms of a Flyback Transformer in DCM
To reach an accurate primary−side constant−voltage regulation, the controller detects the end of the demagnetization time and precisely samples output voltage level seen on the auxiliary winding. As this moment coincides with the secondary−side current equal to zero, the diode forward voltage drop becomes independent from the loading conditions.
Thus when the secondary current I
(t) reaches zero
s
ampere, the auxiliary is sensed:
N
V
+ V
aux
out
pa
N
ps
(eq. 12)
Where: Npa is the auxiliary to primary turns ratio, where N & Na are respectively the primary and auxiliary turns:
N
Auxiliary
Npa+
Vs / ZCD
R
s1
R
s2
a
N
p
t
Blank_ZCD
t
Short_ZCD
(eq. 13)
Zero Crossing & Signal Sampling
Figure 31 illustrates how the constant voltage feedback has been built. The auxiliary winding voltage must be scaled down via the resistor divider to V
ref_CV1
building the constant voltage feedback error.
R
V
ref_CV1
+
Rs1) R
s2
V
aux
s2
By inserting Eg. 12 into Eq. 14 we obtain the following equation:
R
V
ref_CV1
Once the sampled V
p
terminal of the operational transconductance amplifier
s2
+
Rs1) R
is applied to the negative input
out
N
pa
V
N
ps
s2
(OTA) and compared to the internal voltage reference an adequate voltage feedback is built. The OTA output being pinned out, it is possible to compensate the converter and adjust step load response to what the project requires.
Sampled V
V
ref_CV1
out
OTA
Comp
FB_CV
level before
(eq. 14)
out
(eq. 15)
R1
C2
C1
Figure 31. Constant Voltage Feedback Arrangement
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NCP1362
When the power MOSFET is released at the end of the on time, because of the transformer leakage inductance and the drain lumped capacitance some voltage ringing appears on the drain node. These voltage ringings are also visible on the auxiliary winding and could cheat the controller detection circuits. To avoid false detection operations, two protecting circuits have been implemented on the V
/ZCD pin (see
S
Figure 32):
1. An internal switch grounds the V
t
on+tshort_ZCD
in order to protect the pin from
/ZCD pin during
S
negative voltage.
2. In order to prevent any misdetection from the zero crossing block an internal switch disconnects
V
/ZCD pin until t
S
blank_ZCD
time ends.
Figure 32. VS/ZCD Pin Waveforms
Constant−Current and Constant−Voltage Overall Regulation
As already presented in the two previous paragraphs, the controller integrates two different feedback loops: the first one deals with the constant−current regulation scheme while the second one builds the constant−voltage regulation. One of the two feedback paths sets the primary peak current into the transformer. During startup phase, however, the peak current is controlled by the softstart.
Zero Current Detection
The NCP1362 integrates a quasi−resonant (QR) flyback controller. The power switch turn−off of a QR converter is determined by the peak current whose value depends on the feedback loop. The switch restart event is determined by the transformer demagnetization end. The demagnetization end
R
s1
R
s2
ZCD
V
ZCD(TH)
Blanking
T
blank_ZCD
is detected by monitoring the transformer auxiliary winding voltage. Turning on the power switch once the transformer is demagnetized (or reset) reduces turn−on switching losses. Once the transformer is demagnetized, the drain voltage starts ringing at a frequency determined by the transformer magnetizing inductance and the drain lumped capacitance, eventually settling at the input voltage value. A QR controller takes advantage of the drain voltage ringing and turns on the power switch at the drain voltage minimum or “valley” to reduce turn−on switching losses and electromagnetic interference (EMI).
As sketched by Figure 33, a valley is detected once the ZCD pin voltage falls below the QR flyback demagnetization threshold, V
ZCD(TH)
, typically 45 mV. The controller will switch once the valley is detected or increment the valley counter depending on FB voltage.
QR multi−mode
Valley lockout & Valley Switching & VCO management
Timeout − t
out
S
Q
R
DRV
(Internal)
Figure 33. Valley Lockout Detection Circuitry Internal Schematic
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NCP1362
Timeout
The ZCD block actually detects falling edges of the auxiliary winding voltage applied to the ZCD pin. At start−up or during other transient phases, the ZCD comparator may be unable to detect such an event. Also, in the case of extremely damped oscillations, the system may not succeed in detecting all the valleys required by valley lockout operation (VLO, see next section). In this condition, the NCP1362 ensures continued operation by incorporating a maximum timeout period that resets itself when a demagnetization phase is properly detected. In case the ringing signal is too weak or heavily damped, the timeout signal supersedes the ZCD signal for the valley counter. Figure 33 shows the timeout period generator circuit schematic. The timeout duration, t
, is set to 4.5 ms (typ.).
out
In VLO operation, the timeout occurrences are counted instead of valleys when the drain−source voltage oscillations are too damped to be detected. For instance, assume the circuit must turn on at the third valley and the ZCD ringing only enables the detection of:
• Valleys #1 to #2: the circuit generates a DRV pulse t
out
(steady−state timeout delay) after valley #2 detection.
• Valley #1: the timeout delay must run twice so that the
circuit generates a DRV pulse 9 ms (2 × t valley #1 detection.
typ.) after
out
Valley LockOut (VLO) and Frequency Foldback (FF)
The operating frequency of a traditional Quasi−Resonant (QR) flyback controller is inversely proportional to the system load. In other words, a load reduction increases the operating frequency. A maximum frequency clamp can be useful to limit the operating frequency range. However, when associated with a valley−switching circuit, instabilities can arise because of the discrete frequency jumps. The controller tends to hesitate between two valleys and audible noise can be generated
To avoid this issue, the NCP1362 incorporates a proprietary valley lockout circuitry which prevents so−called valley jumping. Once a valley is selected, the controller stays locked in this valley until the input level or output power changes significantly. This technique extends QR operation over a wider output power range while maintaining good efficiency and naturally limiting the maximum operating frequency.
The operating valley (from 1
st
to 4th valley) is determined by the internal feedback level (Internal FB node on Figure 2). As FB voltage level decreases or increases, the valley comparators toggle one after another to select the proper valley. The decimal counter increases each time a valley is detected. The activation of an “n” valley comparator blanks the “n−1” or “n+1” valley comparator output depending if V
FB
decreases or increases, respectively. Figure 34 shows a typical frequency characteristic obtained at low line in a10−W charger.
1.0 × 10
7.5 × 10
5.0 × 10
Fsw (Hz)
2.5 × 10
Fsw vs. P
Fsw versus Pout at VINlow
F
Mode
sw
th
4
th
5
5
4
4
4
0
0 1 2 3 4 5 6 7 8 910
th
5
Frequency
Foldback
Mode
Frequency Foldback
vs. P
rd
3
out
out
th
4
Pout (W)
Figure 34. Typical Switching Frequency vs. Output Power Relationship in a 10−W Adapter
When an “n” valley is asserted by the valley selection circuitry, the controller locks in this valley until the FB voltage decreases to the lower threshold (“n+1” valley activates) or increases to the “n valley threshold” + 600 mV (“n−1” valley activates). The regulation loop adjusts the
, when P
, when P
nd
2
VLO mode
rd
3
is æ
out
is
out
nd
2
VLO mode
æ
st
1
st
1
peak current to deliver the necessary output power at the valley operating point. Each valley selection comparator features a 600−mV hysteresis that helps stabilize operation despite the FB voltage swing produced by the regulation loop.
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NCP1362
Table 5. VALLEY FB THRESHOLD ON CONSTANT VOLTAGE REGULATION
FB Falling FB Rising
1st to 2nd Valley 2.5 V FF Mode to 4
2nd to 3rd Valley 2.3 V 4th to 3rd Valley 2.7 V
3rd to 4th Valley 2.1 V 3rd to 2nd Valley 2.9 V
4th to FF Mode 1.9 V 2nd to 1st Valley 3.1 V
th
2.5 V
Frequency Foldback (FF)
As the output current decreases (FB voltage decreases), the valleys are incremented from 1 to 4. In case the fourth valley is reached, the FB voltage further decreases below
1.9 V and the controller enters the frequency foldback mode (FF). The current setpoint being internally forced to remain above V
CS(VCO)
(setpoint corresponding to V
Comp
), the controller regulates the power delivery by modulating the switching frequency. When an output current increase causes FB to exceed the 2.5−V FF upper threshold (600−mV hysteresis), the circuit recovers VLO operation.
In frequency foldback mode, the system reduces the switching frequency by adding some dead−time after the 4 valley is detected. However, in order to keep the high
Operating
Mode
VCO
th
Valley
4
rd
Valley
3
nd
2
Valley
Pout decreasing
1st Valley
efficiency benefit inherent to the QR operation, the controller turns on again with the next valley after the dead time has ended. As a result, the controller will still run in valley switching mode even when the FF is enabled. This dead−time increases when the FB voltage decays. There is no discontinuity when the system transitions from VLO to FF and the frequency smoothly reduces as FB goes below
1.9 V.
dead−time when V (1.9 V typ.). At this moment, it can linearly go down to the
th
minimal frequency limit. The generated dead−time is 650 ns when V
Pout Increasing
The dead−time is selected to generate a 1.15−ms
is decreasing and crossing V
Comp
is increasing and crossing V
Comp
Max Peak
Current Clamped to V
= V
CS
HVCOI
ILIM
HVCOD
(2.5 V typ.).
1.9 2.1 2.3 2.5 2.7 2.9 3.1
Figure 35. Valley Lockout Threshold
Stand−by Mode
An high frozen peak current is necessary to have good efficiency at 10% of the load. On the other hand, the standby performance will not be optimized. Indeed, in no load condition, the switching frequency has to be high enough to have a good transient response and then keep the output voltage within the limits. If we set a minimum switching frequency, the only parameter that can be adjusted to deliver less power is the primary peak current as shown in Eq. 16.
I
p,pk
2
fSW h
(eq. 16)
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1
P
+
out
2
V
4.3 V
Comp
The NCP1362 implements a peak control mode when the load is closed to 0. From frozen peak current in FF mode (250 mV here), the maximum voltage threshold on CS pin is reduced to 65 mV when the Comp voltage crossed
0.260 V. If the 65−mV threshold is reached in 200 ns for instance due to small primary inductance, the minimum ON time will be defined by the 320−ns leading edge blanking duration and the propagation delay (50 ns) so 370 ns typically.
21
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NCP1362
Figure 36. Frequency Foldback and Standby Mode Behavior with 1−kHz Minimum Frequency Clamp,
V
CS(VCO)
= 250 mV and V
CS(STB)
= 65 mV
Current Setpoint
As explained in this operating description, the current setpoint is affected by several functions. Figure 37 summarizes these interactions. As shown by this figure, the current setpoint is the output of the control law divided by
K
(4 typ.). This current setpoint is clamped by the
comp
soft−start slope as long as the peak current requested by the FB_CV or FB_CC level are higher. The softstart clamp is starting from the frozen peak current (V
CS(VCO)
) to V
ILIM
(0.8 V typ.) within 4 ms (tss).
However, this internal FB value is also limited by the following functions:
LEB1
Peak Current
Control
Control Law
For
Primary Peak
Current Control
LEB2
1/K
comp
V
ILIM
Comp
SoftStart
FB_CV
FB_CC
CS
R
CS
C
R
sense
CS
• A minimum setpoint is forced that equals V
(250 mV, typ.) when 0.760 V < V
comp
CS(VCO)
< 1.9 V
• A second minimum setpoint is forced that equals
V
CS(STB)
(65 mV, typ.) when V
comp
< 0.260 V
• The peak current is linearly reduced between this two
previous frozen peak current (V
CS(VCO)
& V
CS(STB)
• In addition, a second OCP comparator ensures that in
any case the current setpoint is limited to V ensures the MOSFET current setpoint remains limited
in a fault condition.
ILIM
FB Reset
Max_Ipk reset
Count
4 clk
Counter
OCP
Timer
Reset Timer
Reset
Counter
OCP
SCP
PWM Comp
OCP
Comp
POReset
DbleHiccup
Short Circuit
Comp
to V
ILIM
PWM Latch
Reset
)
. This
V
CS(Stop )
Figure 37. Current Setpoint
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NCP1362
A 2nd Over−Current Comparator for Abnormal Overcurrent Fault Detection
A severe fault like a winding short−circuit can cause the switch current to increase very rapidly during the on−time. The current sense signal significantly exceeds V
ILIM
. But, because the current sense signal is blanked by the LEB circuit during the switch turn on, the power switch current can abnormally increase, possibly causing system damages. The NCP1362 protects against this dangerous mode by adding an additional comparator for abnormal overcurrent fault detection or short−circuit condition. The current sense signal is blanked with a shorter LEB duration, t
LEB2
typically 120 ns, before applying it to the short−circuit comparator. The voltage threshold of this extra comparator,
V
, is typically 1.2 V, set 50% higher than V
CS(stop)
ILIM
. This is to avoid interference with normal operation. Four
V
DD
V
Jitter
To CS
Comparator
CS
R
consecutive abnormal overcurrent faults cause the controller to enter in auto−recovery mode. The count to 4 provides noise immunity during surge testing. The counter is reset each time a DRV pulse occurs without activating the fault overcurrent comparator or after double hiccup sequence or if the power supply is unplugged with a new startup sequence after the initial power on reset.
Jittering Capability
In order to help meet the EMI requirements, the NCP1362 features the jittering capability to average the spectrum rays over the frequency range. The function consists of adding a
,
voltage ripple to the peak current information in order to change the operation frequency. The peak−to−peak amplitude of the ripple waveform is 60 mV at 1.5 kHz.
V
CS
Time
LFF
R
V
Sense
jitter
F
jitter
Figure 38. Frequency Jittering
Fault Mode and Protection
• CS Pin: at each startup, a 60−mA (I
) current source
CS
pulls up the CS pin to disable the controller if the pin is left open or grounded. Then the controller enters in a double hiccup mode.
• V
/ZCD Pin: after sending the first drive pulse the
S
controller checks the correct wiring of V
/ZCD pin:
S
after the ZCD blanking time, if there is an open or short conditions, the controller enters in double hiccup mode.
V
bulk
upper
lower
BO/LFF
I
BO
I
BO_en
R
C
BO
R
Brown−out Function
The Brown−out circuitry offers a way to protect the application from operation under too low input voltage. The controller allows the output pulses, only if the input voltage is above V
level. An extra comparator detects if the BO
BO(on)
pin is grounded for disabling the BO feature. The internal circuitry, depicted by Figure 39, offers a way to observe the bulk voltage.
Sample
& Hold
BO_EN
BO_DIS
Start−up
BO_OK
V
BO(EN)
V
BO(ON)
1 ms
Filter
50 ms
Filter
1 ms Filter
STB mode
Figure 39. Internal Brown−out Configuration
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Page 24
The following figures illustrate the behavior of the
Brown−out pin:
V
CC
V
CC(on)
V
CC(off)
V
BO
V
BO(on)
V
BO(off)
DRV
NCP1362
Time
Time
Time
V
CC(on)
V
CC(off)
V
BO(on)
V
BO(off)
Figure 40. Brown−out Input Functionality − VCC < V
V
CC
V
BO
DRV
CC(on)
Time
Time
Time
Figure 41. Brown−out Input Functionality − VCC > V
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24
CC(on)
Page 25
NCP1362
Calculation of the resistors divider:
V
R
lower
+ R
upper
BO(on)
V
* V
bulk
If the power supply must start pulsing at V
= 113 V) with a selected R
(V
bulk
upper
= 10 MW:
BO(on)
(eq. 17)
= 80 V rms
in
Table 6. EXAMPLE OF BROWN−OUT LEVELS WITH R
Parameters BO Pin Level (V) Bulk Level (V) Vin Level (V rms)
V
BO(en)
V
BO(on)
V
BO(off)
0.1 14.0 10
0.8 112.7 79.7
0.7 98.6 69.7
These resistances have to be adjusted after measurements according to the bulk capacitor ripple and also the capacitor connected on the BO pin.
There is the possibility for the customer to disable the BO protection if this function is not needed. To implement this feature, the BO pin voltage is checked when V V after the V
threshold. If the BO voltage is still below V
CC(on)
, the BO function is disabled.
CC(on)
crosses
CC
BO(EN)
R
lower
+ 10 M
0.8
113 * 0.8
+ 71.2 kW
With a selected 71.5−kW normalized ±1% resistor for
R
, it is now possible to calculate all the bulk levels
lower
versus the internal voltage references of the BO pin.
= 71.5 kW & R
lower
Line Feed Forward
upper
= 10 MW
Sensing input line voltage via BO pin allows to generate a current to CS pin directly proportional to the input line level in order to compensate the over current on CS pin due to the propagation delay. The resistor in series with the CS pin adjusts the compensation level.
(eq. 18)
V
DD
Rupper
BO/LFF
V
bulk
C
BO
Rlower
+
V
k
*V
LFF
−
V
BO(on)
I
LFF
CS
R
LFF
R
Sense
Figure 42. Internal Line Feed Forward Configuration
I
LFF
52 mA
K
= 20 mA/V
LFF
0 mA
V
BO(on)
3.4 V
Figure 43. Transfer Function of the Line Feed Forward
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NCP1362
Calculation of the resistor (R
) for compensating the
LFF
overpower.
Let’s assume the power supply needs to have
a compensation of 45 mV (V
) at 265 V rms (Vin).
LFF
First, it is needed to calculate what is the BO level corresponding to the line voltage (here 265 V rms) of the desired compensation level:
V
BO_LFF
+ V
bulk
R
lower
lower
) R
upper
(eq. 19)
R
Then, the resistor value to be inserted between the CS resistor and CS pin could be calculated, as illustrated here after:
V
R
LFF
max
1.9 V
1.6 V
ǒV
LFF
BO_LFF
* V
BO(on)
+
K
LFF
Ǔ
Decreases
(eq. 20)
V
Comp
Numerical application yields:
V
BO_LFF
R
+ 265 2Ǹ
+
LFF
mA
(2.66 V * 0.8 V
20
V
71.5 k
71.5 k ) 10 M
45 mV
+ 2.66 V
+ 1.2 kW
)
(eq. 21)
(eq. 22)
The offset voltage can affect the standby power performance by reducing the peak current setpoint in light−load conditions. For this reason, it is desirable to cancel its action as soon as the VCO mode occurs. A typical curve variation is shown in Figure 44. At low power, below the VCO mode starting point, the LFF current is linearly absorbed and no offset is created through the CS pin when the Comp pin voltage is below 1.6 V. When feedback increases again and reaches the 1.6−V threshold, OPP starts to build up and reaches its full value at 1.9 V.
V
Comp
Increases
100
0 t
Figure 44. The LFF Current is Applied when the Comp Voltage Exceeds 1.6 V. It is 0 below it
Fault Input
The NCP1362 includes a dedicated fault input accessible via the Fault pin. Figure 45 shows the architecture of the Fault input. The controller can be latched by pulling up the pin above the upper fault threshold, V
Fault(OVP)
, typically
3.0 V. An active clamp prevents the Fault pin voltage from reaching the V
Fault(OVP)
if the pin is open. To reach the upper threshold, the external pull−up current has to be higher than the pull−down capability of the clamp.
V
Fault(OVP)
i.e. approximately 1.2 mA.
* V
R
Fault(clamp)
Fault(clamp)
3V* 1.35 V
+
1.35 kW
,
(eq. 23)
t
This function is typically used to detect a VCC or auxiliary winding overvoltage by means of a Zener diode generally in series with a small resistor (see Figure 45).
Neglecting the resistor voltage drop, the OVP threshold is then:
V
AUX(OVP)
+ VZ) V
Fault(OVP)
(eq. 24)
where VZ is the Zener diode voltage.
The controller can also be latched off if the Fault pin voltage, V
V
Fault(OTP)
, is pulled below the lower fault threshold,
Fault
, typically 0.4 V. This capability is normally used
for detecting an overtemperature fault by means of an NTC
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NCP1362
thermistor. A pull up current source I
Fault(OTP)
, (typically
45 mA) generates a voltage drop across the thermistor. The resistance of the NTC thermistor decreases at higher temperatures resulting in a lower voltage across the thermistor. The controller detects a fault once the thermistor voltage drops below V
Fault(OTP)
.
The circuit detects an overtemperature situation when:
R
NTC
I
Fault(OVP)
+ V
Fault(OVP)
(eq. 25)
Hence, the OTP protection trips when
V
V
+
DD
R
Fault(OVP)
I
Fault(OTP)
I
fault(OTP)
fault(clamp)
V
fault(clamp)
V
V
Fault(OTP)
V
Fault(EN)
Fault(OVP)
R
NTC
Vaux
V
Z
Fault
NTC
Blanking
2 ms
Blanking
SS
1 ms
Filter
(eq. 26)
2 ms
end
Sample
& Hold
Start−up
that is 8.9 kW typically.
The controller bias current is reduced during power up by disabling most of the circuit blocks including I This current source is enabled once V
CC
Fault(OTP)
reaches V
CC(on)
A bypass capacitor is usually connected between the Fault and GND pins. It will take some time for V steady state value once I
Fault(OTP)
is enabled. Therefore, the
to reach its
Fault
lower fault comparator (i.e. overtemperature detection) is ignored during soft−start.
Clock
Fault pin disabled
Up Counter
Reset
OVP/OTP gone
BO_DIS V
CC(Reset)
BO_EN
BO_NOK
Fault
4
S
Latch
Q
R
. .
Figure 45. Fault Detection Schematic
As a matter of fact, the controller operates normally while the Fault pin voltage is maintained within the upper and lower fault thresholds. Upper and lower fault detector have blanking delays to prevent noise from triggering them. Both OVP and OTP comparator output are validated only if its high−state duration lasts a minimum of 2 ms. Below this value, the event is ignored. Then, a counter ensures that OVP/OTP events occurred for 4 successive drive clock pulses before actually latching the part.
When the part is latched−off, the drive is immediately turned off and V
goes in endless hiccup mode. The power
CC
supply needs to be un−plugged to reset the part as a result of a BO_NOK (BO fault condition) if Brown−Out feature is enabled otherwise V
CC(Reset)
.
There is the possibility for the customer to disable the fault pin protection if this function is not needed or to reduce the IC consumption in stand−by mode. To implement this
feature, the fault pin voltage is checked when V V after the V
threshold. If the voltage is still below V
CC(on)
, the fault pin is disabled.
CC(on)
crosses
CC
Fault(EN)
Thermal Shutdown
An internal thermal shutdown circuit monitors the junction temperature of controller die of the IC. The controller is disabled if its junction temperature exceeds the thermal shutdown threshold (T
). A continuous V
SHDN
CC
hiccup is initiated after a thermal shutdown fault is detected. The controller restarts at the next V temperature drops below T shutdown hysteresis (T also cleared if V
SHDN(off)
drops below V
CC
sequences commences at the next V
reduced by the thermal
SHDN
). The thermal shutdown is
CC(reset)
CC(on)
once the IC
CC(on)
. A new power up
once all the faults
are removed.
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NCP1362
Table 7. ORDERING TABLE OPTION
OPN #
NCP1362_ _
NCP1362AADR2G x x x
NCP1362ABDR2G x x x
Table 8. ORDERING INFORMATION
Device Device Marking Package Shipping
NCP1362AADR2G P1362AA
NCP1362ABDR2G P1362AB
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Minimum Switching
Frequency in VCO Mode (kHz)
0.2 1 No 80 110 140 Enable Disable
Maximum Switching Frequency (kHz) Jittering Frequency
SOIC−8
(Pb−Free)
2500 / Tape & Reel
†
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0.20 C
NOTES 4&5
D
85
E E1
14
D
B
NOTE 6
TOP VIEW
A
A1
SIDE VIEW
NOTE 8
SIDE VIEW
D
NOTE 6
A
e
0.10 C D
2X
0.10 C
NOTES 4&5
b8X
0.25 A-B
NOTES 3&7
A2
SEATING
C
PLANE
M
0.10 C
NCP1362
PACKAGE DIMENSIONS
SOIC−8
CASE 751AZ
ISSUE B
45 CHAMFER5
h
D
L2
D
C
RECOMMENDED
SOLDERING FOOTPRINT*
L
DETAIL A
DETAIL A
END VIEW
8X
0.76
H
C
NOTE 7
SEATING
PLANE
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF MAXIMUM MATERIAL CONDITION.
4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE.
5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER MOST EXTREMES OF THE PLASTIC BODY AT DATUM H.
6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H.
7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP.
8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.
MILLIMETERS
DIM MIN MAX
A --- 1.75 A1 0.10 0.25 A2 1.25 ---
b 0.31 0.51
c 0.10 0.25 D 4.90 BSC E 6.00 BSC
E1 3.90 BSC
e 1.27 BSC h 0.25 0.41 L 0.40 1.27
0.25 BSC
L2
8X
1.52
7.00
1
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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29
Page 30
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