Semiconductor NCP1362 User manual

Primary Side PWM Controller for Low Power Offline SMPS
NCP1362
Thanks to a Novel Method this new controller saves the secondary feedback circuitry for Constant Voltage and Constant Current regulation, achieving excellent line and load regulation without traditional opto coupler and TL431 voltage reference.
The NCP1362 operates in valley lockout quasiresonant peak current mode control mode at high load to provide high efficiency. When the power on the secondary side starts to diminish, the controller automatically adjusts the dutycycle then at lower load the controller enters in pulse frequency modulation at fixed peak current with a valley switching detection. This technique allows keeping the output regulation with tiny dummy load. Valley lockout at the first 4 valleys prevent valley jumping operation and then a valley switching at lower load provides high efficiency.
Features
Constant Voltage PrimarySide Regulation < ±5%
Constant Current PrimarySide Regulation < ±5%
LFF and BO Feature on a Dedicated Pin:
BO DetectionLFF for CC Regulation Improvement
QuasiResonant with Valley Switching Operation
Optimized Light Load Efficiency and Standby Performance
Maximum Frequency Clamp (No Clamp, 80, 110 and 140 kHz)
Cycle by Cycle Peak Current Limit
Output Voltage Under Voltage and Over Voltage Protection
(UVP or OVP)
Secondary Diode or Winding ShortCircuit Protection
Wide Operation V
Low Startup Current
CS & V
/ZCD Pin Short and Open Protection
S
Internal Temperature Shutdown
Internal and Fixed Frequency Jittering for Better EMI Signature
Dual Frozen Peak Current to Both Optimize Light Load Efficiency
(10% Load) and Standby Performance (Noload)
Fault Input for Severe Fault Conditions, NTC Compatible for OTP
These are PbFree Devices
Applications
Low Power acdc Adapters for Routers and SetTop Box
Low Power acdc Adapters for Chargers
Range (up to 28 V)
CC
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1
SOIC−8
CASE 751AZ
MARKING DIAGRAM
8
P1362yy
ALYW
G
1
IC (PbFree)
P1362yy = Specific Device Code
A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package
Vs/ZCD
COMP
Fault
ORDERING INFORMATION
See detailed ordering and shipping information on page 28 of this data sheet.
(See page 28)
PINOUT DIAGRAM
1
CS
(Top View)
BO/LFF VCC GND DRV
© Semiconductor Components Industries, LLC, 2019
March, 2021 Rev. 3
1 Publication Order Number:
NCP1362/D
NCP1362
Ac
Ac
0
1
2
3
4
NCP1362
VS/ZCD
COMP
Fault
CS
BO/LFF
VCC
GND
DRV
2
3
5
4
8
7
6
5
3
2
1
0
1
Out
RTN_Out
0
Figure 1. NCP1362 Typical Application Schematic for AC Input Voltage
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NCP1362
V
Vs /
ZCD
Comp
CS
UVLO V
cc
V
ref_CC
VCC and Logic
Management of
double hiccup
Zero Crossing & Signal Sampling
CC
Control
V V DbleHiccup POReset EN_UVP
Sampled V
dd
CC (Reset)
CC (OVP)
out
SS
FB_CC
FB _CV
126% V
V
UVP
UVP_Cmp
EN_UVP
OTA
V
ref_CV1
Peak current
V
DD
I
CS
V
I
CS_EN
Control
1/Kcomp
DD
V
Jitter
LEB 1
V
ILIM
POReset
DbleHiccup
LEB2
Counter
V
CS(Stop )
CS pin Open (VCS>1.2
V) & Short ( V
I
CS_EN
mV) detection is
activated at each startup
POReset
Double_Hiccup_ends
Blanking
QR multi−mode
Valley lockout & Valley Switching & VCO management
Control Law
&
Primary Peak
Current Control
OVP_Cmp
4 clk
Counter
OVP
ref_CV1
UVP
DbleHiccup
FB Reset
Max_Ipk reset
Count
Reset
Counter
4 clk
SCP
<50
CS
V
CC(OVP )
OCP
Timer
Reset Timer
FB
UVP
SCP
S
Q
R
OCP
CS pin Fault
Reset
Soft Start
R
S
I
%VBO
SS
BO_EN
BO_DIS
BO_OK
High_Line
UVLO
S
Q
R
POReset
Fault
Q
SS
end
Note: OVP: Over Voltage Protection UVP: Under Voltage Protection OCP : Over Current Protection SCP: Short Circuit Protection t
LEB1>tLEB2
FeedForward
V
cc
Clamp
V
fault( OVP)
V
Fault (OTP)
V
fault(EN )
Line
V
V
V
BO (EN)
BO (ON)
HL( on)
BO/LFF
DRV
GND
V
DD
fault(OTP)
I
Fault
fault(clamp)
R
fault(clamp)
V
Figure 2. Functional Block Diagram
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NCP1362
Table 1. PIN FUNCTION DESCRIPTION
Pin Name Function
1 Vs/ZCD Connected to the auxiliary winding; this pin senses the voltage output for the primary regula-
2 Comp This is the error amplifier output. The network connected between this pin and the ground
3 Fault The controller enters in fault mode if the voltage of this pin is pulled above or below the fault
4 CS This pin monitors the primary peak current.
5 DRV The driver’s output to an external MOSFET gate.
6 GND Ground reference.
7 V
CC
8 BO/LFF Detects too low input voltage conditions (BrownOut). Also voltage pin level is used for build-
Table 2. MAXIMUM RATINGS (Note 1)
Symbol
V
CC(MAX)
I
CC(MAX)
DVCC/Dt
E
V
MAX
I
MAX
V
DRV(MAX)
I
DRV(MAX)
R
θ
T
J(MAX)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
2. V
DRV
Maximum Power Supply voltage, VCC pin, continuous voltage Maximum current for V
Maximum slew rate on V
Single Pulse Avalanche Rating 120 mJ
as
Maximum voltage on low power pins (except pins DRV and VCC) Current range for low power pins (except pins DRV and VCC)
Maximum driver pin voltage, DRV pin, continuous voltage Maximum current for DRV pin
Thermal Resistance JunctiontoAir, 2.0 oz Printed Circuit Copper Clad 190 °C/W
JA
Maximum Junction Temperature 150 °C
Operating Temperature Range 40 to +125 °C
Storage Temperature Range 60 to +150 °C
Human Body Model ESD Capability per JEDEC JESD22A114F 2 kV
Machine Model ESD Capability (All pins except DRV) per JEDEC JESD22−A115C 200 V
ChargedDevice Model ESD Capability per JEDEC JESD22C101E 500 V
is the DRV clamp voltage V
tion and detects the core reset event for the QuasiResonant mode of operation.
adjusts the regulation loop bandwidth.
thresholds. A precise pullup current allows direct interface with an NTC thermistor. Fault de­tection triggers a latch.
This pin is connected to an external auxiliary voltage and supplies the controller.
ing Line FeedForward compensation for improving Constant Current regulation tolerance.
Rating Value Unit
0.3 to 28
pin
CC
pin during start−up phase +0.4
CC
Internally limited
0.3, 5.5
2, +5
DRV(high)
when VCC is higher than V
DRV(high)
. V
is VCC otherwise.
DRV
0.3, V
(Note 2)
DRV
300, +500
V
mA
V/ms
V
mA
V
mA
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NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(V
= 12 V, For typical values Tj = 25°C, for min/max values Tj = 40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
CC
Characteristics
SUPPLY SECTION AND VCC MANAGEMENT
Level at which Driving Pulses
V
CC
are Authorized
VCC Level at which Driving Pulses
VCC increasing V
VCC decreasing V
are Stopped
Internal Latch/Logic Reset Level
Internal Autorecovery Reset Level (Note 4) V
Hysteresis above V Hiccup in Latch Mode
Hysteresis below V before Latch Reset
CC(off)
CC(off)
for Fast
Over Voltage Protection Over Voltage threshold V
Startup Supply Current, Controller Disabled or Latched
Internal IC Consumption, Steady State
Internal IC Consumption in Minimum Frequency Clamp
Internal IC Consumption in Fault
VCC < V increasing from 0 V
FSW = 65 kHz C
VCO mode, FSW = f V
Autorecovery mode I Mode (after a fault when VCC decreasing to V
Internal IC Consumption in Fault Mode (after a fault when V decreasing to V
CC(off)
CC(off)
)
Latch mode I
CC
)
CURRENT COMPARATOR
Current Sense Voltage Threshold
V
V
Cycle by Cycle Leading Edge Blanking Duration
Cycle by Cycle Current Sense Propagation Delay
Timer Delay before Detecting an Overload Condition
VCS > (V
DRV turnoff
When CS pin w V
(Note 3)
Threshold for Immediate Fault Protection Activation
Leading Edge Blanking Duration for V
Maximum Peak Current Level at which VCO Takes Over or Frozen Peak Current
CS(stop)
V
0.6 V < V
(other possible options on
demand)
Minimum Peak Current Level V
V
(other possible options on
demand)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
Condition Symbol Min Typ Max Unit
16.5 18 19.5 V
6.0 6.5 7.0 V
6.25 V
0.6 V
0.2 V
0.15 0.30 0.50 V
24 26 28 V
5.4 7.0
1.6 2.3 mA
– –
325 210
2.0 2.2 mA
1.0 1.2 mA
0.76 0.8 0.84 V
250 320 380 ns
50 110 ns
50 70 90 ms
1.10 1.20 1.30 V
120 ns
250 mV
65 mV
= 1 nF
L
Comp
f
VCO(min)
f
VCO(min)
C
= 1 nF
L
Comp
increasing
CS
increasing
CS
increasing
CS Comp
CC(on)
= GND
= 1 kHz = 200 Hz
= V
Comp(max)
ILIM
Comp
< 0.2 V
& V
CC
VCO(min)
,
+ 100 mV) to
ILIM
< 1.9 V
,
CC(on)
CC(off)
V
CC(reset)
CC(reset_auto)
V
CC(latch_hyst)
V
CC(reset_hyst)
CC(OVP)
I
CC(start)
I
CC(steady)
I
CC(VCO)
CC(auto)
CC(latch)
V
ILIM
t
LEB1
t
ILIM
T
OCP
V
CS(stop)
t
LEB2
V
CS(VCO)
V
CS(STB)
mA
mA
430 370
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NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = 40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
REGULATION BLOCK
Internal Voltage Reference for Constant Current Regulation
Internal Voltage Reference for Constant Voltage Regulation
TJ = 25°C
40°C < T
TJ = 25°C
40°C < T
< 125°C
J
< 125°C
J
Error Amplifier Current Capability
Error Amplifier Gain G
Error Amplifier Output Voltage Internal offset on Comp pin V
Internal Current Setpoint Division Ratio
Valley Thresholds
Transition from 1 Transition from 2nd to 3rd Valley Transition from 3rd to 4th Valley Transition from 4 Transition from VCO to 4th Valley Transition from 4th to 3rd Valley Transition from 3rd to 2nd Valley Transition from 2nd to 1st Valley
Minimal Difference between any Two Valleys
Internal Dead Time Generation for VCO Mode
Internal Dead Time Generation for VCO Mode
Internal Dead Time Generation for VCO Mode
Minimum Switching Frequency in VCO Mode
st
to 2nd Valley
th
Valley to VCO
V
decreasing
Comp
V
decreasing
Comp
V
decreasing
Comp
V
decreasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing
Comp
V
increasing or V
Comp
decreasing
Comp
Entering in VCO when
V
is decreasing and
Comp
crosses V
HVCOD
Leaving VCO mode when
V
is increasing and
Comp
crosses V
HVCOI
When in VCO mode –
1kHz option
V
= 1.8 V
Comp
V
= 1.4 V
Comp
V
= 0.9 V
Comp
V
< 0.2 V
Comp
V
= GND
Comp
Option 1
Option 2 (other possible options on demand)
Maximum Switching Frequency
Option 1 Option 2 Option 3 Option 4
Maximum On Time T
DEMAGNETIZATION INPUT – ZERO VOLTAGE DETECTION CIRCUIT and VOLTAGE SENSE
Threshold Voltage V
V
ZCD
V
Hysteresis V
ZCD
decreasing V
ZCD
increasing V
ZCD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
V
ref_CC
V
ref_CV1
I
EA
EA
Comp(max)
V
Comp(min)
V
Comp(offset)
K
Comp
V
H2D
V
H3D
V
H4D
V
HVCOD
V
HVCOI
V
H4I
V
H3I
V
H2I
DV
H
T
DT(start)
T
DT(ends)
T
DT
f
VCO(MIN)
f
MAX
on(max)
ZCD(TH)
ZCD(HYS)
0.98
0.97
2.450
2.425
1.00
1.00
2.500
2.500
1.02
1.03
2.550
2.575
±40
150 200 250
4.9
1.1
0
4
2.50
2.30
2.10
1.90
2.50
2.70
2.90
3.10
176 mV
1.15
650 ns
0.8
0.16
72 99
127
1.6 11
110
1000
1.0
0.200
No Clamp
80
110 140
1.2
0.24
88 121 153
32 36 40
25 45 70 mV
15 30 45 mV
V
V
mA
mS
V
V
ms
ms
kHz
kHz
ms
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NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = 40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
DEMAGNETIZATION INPUT – ZERO VOLTAGE DETECTION CIRCUIT and VOLTAGE SENSE
Threshold Voltage for Output Short Circuit or Aux. Winding Short Circuit Detection
After t V
ZCD
BLANK_ZCD
< V
ZCD(short)
if
V
ZCD(short)
30 50 75 mV
Delay after Ontime that the V
/ZCD is still Pulled to Ground
S
Blanking Delay after Ontime (V
/ZCD Pin is Disconnected from
S
the Internal Circuitry)
Timeout after Last Demagnetization Transition
Input Leakage Current VCC > V
Delay from Valley Detection to DRV Low
When V
Comp
When V
Comp
When V
Comp
When V
Comp
CC(on) VZCD
DRV is low
> 1.7 V < 1.7 V
> 1.7 V < 1.7 V
= 4 V,
t
short_ZCD
t
BLANK_ZCD
t
out
I
ZCD
t
ZCD_delay
0.750
0.350
1.450
0.750
4.0 4.5 5.0
0.1
290 ns
ms
ms
ms
mA
DRIVE OUTPUT GATE DRIVE
Drive resistance
DRV Sink − VCC = 8 V DRV Source − V
Rise time C
Fall time C
= 1 nF, from 10% to 90% t
DRV
= 1 nF, from 90% to 10% t
DRV
DRV Low voltage VCC = V
= 220 pF, R
DRV High voltage VCC = V
= 220 pF, R
CC(off)
DRV
CC(OVP)
DRV
= 8 V
CC
+ 0.2 V, C
= 33 kW
0.2 V, C
= 33 kW
DRV
DRV
R
SNK
R
SRC
V
DRV(low)
V
DRV(high)
r
f
45 85 ns
30 65 ns
10
8
W
6.0 V
12.0 13.0 V
SOFT START
Internal Fixed Soft Start Duration
Current Sense peak current rising from V
CS(VCO)
to V
ILIM
t
SS
3 4 5 ms
JITTERING
Frequency of the Jittering CS Pin Source Current
Option 1 (other possible options on
f
jitter
1.2 1.5 1.8 kHz
demand)
Peak Jitter Voltage Added to PWM Comparator
Option 1 (other possible options on
V
jittter
60 mV
demand)
BROWNOUT & LINE FEED FORWARD
Brownout Function is Disabled below this Level (before the 1
st
V
BO(en)
80 100 120 mV
DRV pulse only)
Pulldown Current Source on BO Pin for Open Detection
Brownout Level at which the Controller Starts Pulsing
Brownout Level at which the Controller Stops Pulsing
Brownout Filter Time t
V
BO(on)
V
BO(off)
I
BO
300 nA
0.75 0.80 0.85 V
0.65 0.70 0.75 V
BO
50
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
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NCP1362
Table 3. ELECTRICAL CHARACTERISTICS
(VCC = 12 V, For typical values Tj = 25°C, for min/max values Tj = 40°C to +125°C, Max Tj = 150°C, unless otherwise noted)
Characteristics UnitMaxTypMinSymbolCondition
BROWNOUT & LINE FEED FORWARD
Line Feed Forward Compensation Gain
FAULT PROTECTION
Controller Thermal Shutdown
Device switching (F
65 kHz) – Tj rising
SW
Thermal Shutdown Hysteresis Device switching
(F
65 kHz) − Tj falling
SW
Fault Level Detection for OVP Internal sampled V
increasing V
= V
OVP
ref_CV1
Fault Level Detection for UVP Double Hiccup Autorecovery
Internal sampled V decreasing
out
+ 26%
out
(UVP detection is disabled during T
EN_UVP
)
Blanking Time for UVP Detection Starting after the Soft start T
Pullup Current Source on CS Pin for Open or Short Circuit Detec-
When VCS > V
CS_min
tion
CS Pin Open Detection CS pin open V
K
LFF
T
SHTDN(on)
T
SHTDN(off)
V
OVP
V
UVP
EN_UVP
I
CS
CS(open)
16 20 24
150 °C
120 °C
2.95 3.15 3.35 V
1.40 1.50 1.60 V
36 ms
60
1.2 V
mA/
V
mA
CS Pin Short Detection V
CS pin Short Detection Timer (Note 4) T
Fault Pin is Disabled below this Level (before the 1
st
DRV pulse
V
CS_min
CS_short
Fault(EN)
50 75 mV
3
ms
80 100 120 mV
only)
Overvoltage Protection (OVP) Threshold
Overtemperature Protection (OTP) Threshold
OTP Pullup Current Source V
Fault Input Clamp Voltage I
Fault Input Clamp Voltage I
Fault Filter Time t
Number of Drive Cycle before Latch Confirmation
V
increasing V
Fault
V
decreasing V
Fault
= 0 V
Fault
T
= 25°C
j
= 110°C
T
j
= 0 mA (V
Fault
= 1 mA V
Fault
V
= V
Comp
V
CS
or Internal rebuilded V
out
or 0.40 V < V or V
> V
CS(stop)
> V
OVP
ZCD(short)
Comp(max)
Fault
Fault
< 3.00 V
= open) V
,
Fault(OVP)
Fault(OTP)
I
Fault(OTP)
I
Fault(OTP_110)
Fault(clamp)0
Fault(clamp)1
Fault(filter)
t
latch(count)
2.79 3.00 3.21 V
0.38 0.40 0.42 V
42.5
42.9
45.0
45.0
47.5
46.5
1.10 1.35 1.60 V
2.2 2.7 3.2 V
2
4
mA
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions.
4. Guaranteed by Design.
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NCP1362
)
)
TYPICAL CHARACTERISTICS
18.09
18.07
18.05
(V)
18.03
CC(on)
18.01
V
17.99
17.97
17.95
50 25 0 25 50 75 100 125
TEMPERATURE (5C)
(V)
CC(reset)
V
6.292
6.287
6.282
6.277
6.272
Figure 3. V
vs. Junction Temperature Figure 4. V
CC(on)
6.59
6.585
6.58
(V)
6.575
CC(off)
V
6.57
6.565
6.56
50 25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
CC(off)
5.2
4.7
4.2
(mA)
3.7
CC(start)
I
3.2
6.267
6.262
50 25 0 25 50 75 100 125
TEMPERATURE (5C)
Figure 5. V
0.808
0.806
0.804
(V)
0.802
ILIM
V
0.8
0.798
0.796
0.794
50 25 0 25 50 75 100 125
CC(reset
vs. Junction Temperature Figure 6. I
TEMPERATURE (5C)
Figure 7. V
vs. Junction Temperature Figure 8. t
ILIM
2.7
2.2
50 25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
(ns)
LEB1
t
CC(start
316.5
316
315.5
315
314.5
314
313.5
313
312.5
312
50 25 0 25 50 75 100 125
TEMPERATURE (5C)
vs. Junction Temperature
LEB1
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