Semiconductor BC847CDXV6T1-D Service Manual
BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5
Dual General Purpose
Transistors
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NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol BC847 BC848 Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol Max Unit
Symbol Max Unit
45 30 V
50 30 V
6.0 5.0 V
100 100 mAdc
P
D
R
q
JA
P
D
R
q
JA
TJ, T
− 55 to +150 °C
stg
357
2.9
350 °C/W
500
4.0
250 °C/W
mW
mW/°C
mW
mW/°C
(3)
Q
1
(4) (5) (6)
BC847CDXV6T1
6
1
SOT−563
CASE 463A
PLASTIC
(1)(2)
Q
2
MARKING DIAGRAMS
1x M G
G
1
1x = Device Code
x = G or M
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 1
1 Publication Order Number:
BC847CDXV6T1/D
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(IC = 10 mA) BC847CDXV6T1
BC848CDXV6T1
Collector− Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0) BC847CDXV6T1
BC848CDXV6T1
Collector− Base Breakdown Voltage
(IC = 10 mA) BC847CDXV6T1
BC848CDXV6T1
Emitter− Base Breakdown Voltage
(IE = 1.0 mA) BC847CDXV6T1
BC848CDXV6T1
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
Collector− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector− Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base− Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base− Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base− Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
obo
NF
FE
45
30
−
−
−
−
V
V
50
30
−
−
−
−
V
50
30
−
−
−
−
V
6.0
5.0
−
−
−
−
−
−
15
5.0
−
−
nA
mA
−
−
420
−
−
−
−
580
−
T
100 − − MHz
270
520
−
−
0.7
0.9
660
−
−
800
0.25
0.6
−
−
700
770
V
V
mV
− − 4.5 pF
dB
− − 10
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC847CDXV6T1
BC847CDXV6T1G SOT−563
SOT−563 4000 Units / Tape & Reel
4000 Units / Tape & Reel
(Pb−Free)
BC847CDXV6T5 SOT−563 8000 Units / Tape & Reel
BC847CDXV6T5G SOT−563
1G
8000 Units / Tape & Reel
(Pb−Free)
BC848CDXV6T1
BC848CDXV6T1G SOT−563
SOT−563 4000 Units / Tape & Reel
4000 Units / Tape & Reel
(Pb−Free)
BC848CDXV6T5 SOT−563 8000 Units / Tape & Reel
BC848CDXV6T5G SOT−563
1L
8000 Units / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
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2
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