Semiconductor BC846ALT1G Service Manual
BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
ESD Rating − Machine Model: >400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous I
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
V
CEO
V
CBO
V
EBO
P
R
P
R
TJ, T
65
45
30
80
50
30
6.0
6.0
5.0
stg
100 mAdc
225
1.8mWmW/°C
556 °C/W
300
2.4mWmW/°C
417 °C/W
−55 to
+150
C
D
q
JA
D
q
JA
Vdc
Vdc
Vdc
°C
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M G
G
1
XX = Device Code
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 9
1 Publication Order Number:
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846A,B
= 10 mA) BC847A,B,C, BC850B,C
(I
C
BC848A,B,C, BC849B,C
Collector−Emitter Breakdown Voltage BC846A,B
(I
= 10 mA, VEB = 0) BC847A,B,C BC850B,C
C
BC848A,B,C, BC849B,C
Collector−Base Breakdown Voltage BC846A,B
(I
= 10 mA) BC847A,B,C, BC850B,C
C
BC848A,B,C, BC849B,C
Emitter−Base Breakdown Voltage BC846A,B
(I
= 1.0 mA) BC847A,B,C, BC850B,C
E
BC848A,B,C, BC849B,C
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(I
= 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B
C
BC847C, BC848C
= 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A
(I
C
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (I
= 10 mA, VCE = 5.0 V)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
C
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure (IC = 0.2 mA,
V
= 5.0 Vdc, RS = 2.0 kW, BC846A,B, BC847A,B,C, BC848A,B,C
CE
f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C
Figure 1.
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
obo
NF
FE
T
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
−
−
−
−
−
110
200
420
−
−
−
−
580
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
−
−
−
−
−
−
−
−
−
15
5.0
−
−
−
220
450
800
0.25
0.6
−
−
700
770
nA
mA
mV
100 − − MHz
− − 4.5 pF
dB
−
−
−
−
10
4.0
V
V
V
V
−
V
V
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