Semiconductor AN17821AMAT Service Manual

Prepared
Checked
Approved

Product Specifications

AN17821A

Ref No.
Total Page
Page No.

A

9
1

Structure
Appearance
Application
Function

Absolute Maximum RatingsA

No. Item

1

Storage Temperature

2

Operating Ambient Temperature

3

Operating Ambient Pressure

4

Operating Constant Acceleration

Silicon Monolithic Bipolar IC
SIL-12 Pin Plastic Package (Power Type with Fin)
Low Frequency Amplifier
BTL 5.0W x 2ch Power Amplifier

with Standby Function and Volume Function

Symbol

Tstg
Topr
Popr

Gopr

Ratings

-55 ~ +150

-25 ~ +70

1.013x105±0.61x10

9,810 m/s

Unit

5

° C
° C

Pa

Note

1
1

2

5

Operating Shock

6

Supply Voltage

7

Supply Current

8

Power Dissipation

Operating Supply Voltage Range

Note 1)

The temperature of all items shall be Ta=25°C except storage temperature and
operating ambient temperature.

2)

At no signal input.

Sopr

Vcc

Icc
P

D

Vcc 3.5V ~ 13.5V

4,900

14.4

2.0

1.92

m/s

V
A

W

2

2

Ta=70°C

Eff. Date Eff. Date Eff. Date Eff. Date

06-MAR-2002

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1

Prepared
Checked
Approved

Product Specifications

AN17821A

Ref No.
Total Page
Page No.

B-1

9
2

Electrical CharacteristicsB

No Item

Quiescent Circuit

1

Current

Standby Current

2

Output Noise

3

Voltage

Voltage Gain

4

Total Harmonic

5

Distortion
Maximum Power

6

Output 1

Symbol

I

CQ

I

STB

V

NO

G

V

THD

PO1

(Unless otherwise specified, the ambient temperature is 25°C±2°C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)

Test
Cir-

Conditions

cuit

Vin=0V, Vol=0V

1

Vin=0V, Vol=0V

1

Rg=10kΩ, Vol=0V

1

Po=0.5W, Vol=1.25V

1

1

Po=0.5W, Vol=1.25V

THD=10%, Vol=1.25V

1

-

-

-

31

-

2.4

Limits

45

1

0.10

33

0.10

3.0

maxtypmin

100

10

0.4

35

0.5

Unit

mA

µA

mVrms

dB

-

Note

1

%

W

Maximum Power

7

Output 2

Ripple Rejection

8

Ratio
Output Offset

9

Voltage
Volume

10

Attenuation Ratio

11

Channel Balance 1

12

Channel Balance 2

Middle Voltage

13

Gain

14

Channel Crosstalk

PO2

RR

Voff

Att

CB1

CB2

G

Vm

CT

Vcc=11V

1

THD=10%, Vol=1.25V
Rg=10kΩ, Vol=0V

1

Vr=0.5Vrms, fr=120Hz

Rg=10kΩ, Vol=0V

1

Po=0.5W, Vol=0V

1

Po=0.5W, Vol=1.25V

1

1

Po=0.5W, Vol=0.6V

Po=0.5W, Vol=0.6V

1

Po=0.5W, Vol=1.25V

1

4.0

30

-250

70

-1

-2

20.5

40

5.0

50

0

85

0

0

23.5

55

-

-

250

-

1

2

26.5

-

W

dB

mV

dB

dB

dB

dB

dB

1

1

Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).

Eff. Date Eff. Date Eff. Date Eff. Date

06-MAR-2002

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1

Prepared
Checked

Product Specifications

(Reference Data for Design)

Ref No.
Total Page

B-2

9

Approved

Electrical CharacteristicsB

No Item

Standby pin

1

current
Volume pin

2

current

Input Impedance

3

Note)

AN17821A

(Unless otherwise specified, the ambient temperature is 25°C±2°C,
Vcc=8.0V, frequency=1kHz and RL=8Ω.)

Test

Symbol

I

STB2

I

VOL

The above characteristics are reference values determined for IC design, but not guaranteed
values for shipping inspection. If problems were to occur, counter measures will be
sincerely discussed.

Cir-

Conditions

cuit

Vin=0V, VSTB=3V

1

Vin=0V, Vol=0V

1

Z

i

Vin=±0.3VDC

1

-

-12

24

Page No.

Limits

-

-

30

maxtypmin

25

36

3

Unit

-

Note

µA

µA

kΩ

Eff. Date Eff. Date Eff. Date Eff. Date

06-MAR-2002

Semiconductor Company, Matsushita Electric Industrial Co., Ltd.FMSC-PSDA-002-01 Rev.1