SEMICOA 2N5152L Datasheet
Data Sheet No. 2N5152L
Type 2N5152L
Geometry 9201
Polarity NPN
Qual Level: JAN - JANS
Features:
• Silicon power transistor for use in
high speed switching applications.
• Housed in a TO-5 case.
• Also available in chip form using
the 9201 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/544 which
Semicoa meets in all cases.
Maximum Ratings
Generic Part Number:
2N5152L
REF: MIL-PRF-19500/544
TO-5
TC = 25oC unless otherwise specified
Rating Symbol Rating Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Collector Current, PW < 8.3 ms, < 1% duty cycle I
Reverse Pulse Energy 15 mJ
Power Disipation T
Derate above 25
= 25oC ambient 1.0 Watt
A
o
C
Operating Junction Temperature
Storage Temperature
V
CEO
V
CBO
V
EBO
I
C
C
P
T
T
J
T
STG
80 V
100 V
5.5 V
2 A
10 A
5.7
-65 to +200
-65 to +200
mW/
o
o
C
C
o
C
Data Sheet No. 2N5152L
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 100 mA, I
= 0, pulsed
Electrical Characteristics
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, V
= 5 V
h
20
---
---
IC = 2.5 A, V
= 5 V, pulsed
h
3090---
IC = 5.0 A, V
= 5 V, pulsed
h
20
---
---
IC = 2.55 A, V
= 5 V pulsed, T
= -55
o
C
h
15
---
---
Base-Emitter Voltage, Nonsaturted
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Symbol
Min
Max
Unit
Switching Time
Symbol
Min
Max
Unit
TC = 25oC unless otherwise specified
B
Base-Emitter Cutoff Current
VEB = 4 V, IC = 0
VEB = 5.5 V, IC = 0
Collector-Emitter Cutoff Current
VCE = 60 V, VBE = 0 I
VCE = 100 V, VBE = 0 I
VCE = 40 V, IB = 0 I
VCE = 60 V, VBE = -2 V, TC = 150oC I
CE
CE
CE
CE
V
= 5 V, IC = 2.5 A, pulsed V
CE
C
IC = 2.5 A, IB = 250 mA, pulsed V
IC = 5 A, IB = 500 mA, pulsed V
V
(BR)CBO
I
EBO1
I
EBO2
CES1
CES2
CEO
CEX
FE1
FE2
FE3
FE4
BE(sat)1
BE(sat)2
BE
80 ---
V
--- 1.0 µA
--- 1.0 mA
--- 1.0
--- 1.0
--- 50
µA
mA
µA
--- 500 µA
--- 1.45 V dc
--- 1.45 V dc
--- 2.2 V dc
IC = 2.5 A, IB = 250 mA, pulsed V
IC = 5 A, IB = 500 mA, pulsed V
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
VCE = 5 V, IC = 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
VCE = 5 V, IC = 100 mA, f = 1 kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
Delay Time
IC = 5 A, I
= 500 mA
B1
Storage Time
IB2 = -500 mA
Fall Time
V
= 3.7 V
BE(off)
Turn-Off Time
RL = 6 ohms
CE(sat)1
CE(sat)2
|hfe|
h
fe
C
OBO
t
ON
t
s
t
f
t
OFF
--- 0.75 V dc
--- 1.5 V dc
6.0 ---
---
20 --- ---
--- 250 pF
--- 0.5
µs
--- 1.4 µs
---
0.5 µs
--- 1.5 µs
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